Components
Every component in the standard library — its symbol, what it does, and its parameters.
Symbols are rendered from the live drawing engine, with their connection leads and their pins shown unconnected — the component as you meet it in the palette, before anything is wired to it. Parameter tables are read from the component registry, so the defaults, units and on-schematic visibility below are the as-placed values by construction rather than by transcription.
The first table is the component's terminals: the nets its netlist line takes, in
the order it takes them. That order is what the models themselves read — a diode's anode before its
cathode, a MESFET's gate before its drain — so it is worth checking before hand-writing a
.cnl line; the figure above it shows where those pins sit, not which is which.
Where a terminal has a name it carries it, and where it does not the sentence under the table says whether the order matters — most two-terminal parts may be wired either way round, and a few that look symmetric may not. Read that sentence rather than the numbers: a resistor's ends are interchangeable, an inductor's stop being interchangeable the moment a Mutual couples it to another, and a taper's two ends are its two widths.
In the parameter table below it, Name is the parameter key, as it appears in the editor and in the netlist.
Default and Unit are the as-placed value. A parameter marked
shown appears as a label on the schematic by default; the rest are available in the parameter
editor. Units accept SI prefixes (pF, nH, GHz,
kΩ).
Lumped elements
Resistor (R)
An ideal, frequency-independent resistor. R is the resistance.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. The two terminals are interchangeable — swapping them gives the same circuit.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| R | 1 | Ω | shown |
Inductor (L)
An ideal inductor. L is the inductance. Couple two inductors with a Mutual element.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. Interchangeable on its own — but NOT once coupled. A Mutual (M) couples the two elements' branch currents, and each branch current runs from that element's own terminal 1 to its terminal 2, so swapping one of them reverses the sign of the coupling. Terminal 1 is the dotted end.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| L | 1 | nH | shown |
Capacitor (C)
An ideal, linear capacitor. C is the capacitance. For a voltage-dependent capacitance, see
NonlinearC.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. The two terminals are interchangeable — swapping them gives the same circuit.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| C | 1 | pF | shown |
Series RLC (SRLC)
A resistance, an inductance and a capacitance in series, as one part. R, L and C are the
three values; the branch impedance is R + jωL + 1/(jωC).
This is the shape a real capacitor takes above a few hundred megahertz, which is the usual reason to
place one: a ceramic capacitor's datasheet gives an ESR and an ESL, and those go straight into R
and L. The part is series-resonant at 1/(2π√(LC)), where its impedance falls to R — below that
frequency it behaves as a capacitor, above it as an inductor. At DC the series capacitance makes the
branch an open circuit.
Its pins sit exactly where a plain R, L or C's do, so you can swap one in for another without moving any wires. Its inductance can be coupled with a Mutual, which names the SRLC instance in place of an inductor.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. Interchangeable on its own — but NOT once coupled. A Mutual (M) couples the two elements' branch currents, and each branch current runs from that element's own terminal 1 to its terminal 2, so swapping one of them reverses the sign of the coupling. Terminal 1 is the dotted end.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| R | 1 | Ω | shown |
| L | 1 | nH | shown |
| C | 1 | pF | shown |
Parallel RLC (PRLC)
The same three values in parallel — a tank. R, L and C all sit across the same two nodes,
giving an admittance of 1/R + jωC + 1/(jωL).
At the parallel resonance 1/(2π√(LC)) the reactive parts cancel and the part is purely resistive
at R, which is what makes it the natural way to enter a measured resonance: R sets the peak
impedance, L and C set where it sits and how sharp it is. At DC the ideal inductor shorts it out.
Pin positions and Mutual coupling work exactly as they do for the SRLC above.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. Interchangeable on its own — but NOT once coupled. A Mutual (M) couples the two elements' branch currents, and each branch current runs from that element's own terminal 1 to its terminal 2, so swapping one of them reverses the sign of the coupling. Terminal 1 is the dotted end.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| R | 1 | Ω | shown |
| L | 1 | nH | shown |
| C | 1 | pF | shown |
Series RL (SRL)
A resistance and an inductance in series, as one part: R + jωL. A real inductor, whose winding
resistance is the R — and, unlike the SRLC you would otherwise place for the same job,
with no third value on the schematic that nobody meant.
There is no series capacitance, so this branch does not open at DC: at ω = 0 it is simply R,
which is what the physical part measures. Its inductance can be coupled with a Mutual.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. Interchangeable on its own — but NOT once coupled. A Mutual (M) couples the two elements' branch currents, and each branch current runs from that element's own terminal 1 to its terminal 2, so swapping one of them reverses the sign of the coupling. Terminal 1 is the dotted end.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| R | 1 | Ω | shown |
| L | 1 | nH | shown |
Series RC (SRC)
A resistance and a capacitance in series: R + 1/(jωC). A real capacitor entered with its ESR,
or a series RC damper across a resonance. At DC the capacitance makes the branch an open circuit.
It carries no inductor, so a Mutual naming one is refused rather than coupled — the refusal says so and names the part.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. The two terminals are interchangeable — swapping them gives the same circuit.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| R | 1 | Ω | shown |
| C | 1 | pF | shown |
Series LC (SLC)
An inductance and a capacitance in series: jωL + 1/(jωC). The lossless series trap — its
impedance falls to zero at 1/(2π√(LC)), which in a shunt arm is a notch. Below the resonance it
behaves as a capacitor and above it as an inductor; at DC it is an open circuit.
Its inductance can be coupled with a Mutual.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. Interchangeable on its own — but NOT once coupled. A Mutual (M) couples the two elements' branch currents, and each branch current runs from that element's own terminal 1 to its terminal 2, so swapping one of them reverses the sign of the coupling. Terminal 1 is the dotted end.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| L | 1 | nH | shown |
| C | 1 | pF | shown |
Parallel RL (PRL)
A resistance and an inductance in parallel: an admittance of 1/R + 1/(jωL). The shunt form of
a lossy coil, and the usual way a damped choke is entered. At DC the ideal inductor shorts it out.
Its inductance can be coupled with a Mutual.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. Interchangeable on its own — but NOT once coupled. A Mutual (M) couples the two elements' branch currents, and each branch current runs from that element's own terminal 1 to its terminal 2, so swapping one of them reverses the sign of the coupling. Terminal 1 is the dotted end.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| R | 1 | Ω | shown |
| L | 1 | nH | shown |
Parallel RC (PRC)
A resistance and a capacitance in parallel: an admittance of 1/R + jωC. A leaky capacitor, or
the shunt RC an equivalent circuit puts across a port. At DC the capacitor is an open and the part
is R.
This is the one member of the RLC family that adds no branch current to the matrix — and therefore the one a Mutual cannot name.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. The two terminals are interchangeable — swapping them gives the same circuit.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| R | 1 | Ω | shown |
| C | 1 | pF | shown |
Parallel LC (PLC)
An inductance and a capacitance in parallel: an admittance of jωC + 1/(jωL). The lossless
tank — its impedance goes to infinity at 1/(2π√(LC)). For a tank with a finite peak impedance, use
a PRLC and let R set the peak. At DC the ideal inductor shorts it out.
Its inductance can be coupled with a Mutual.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. Interchangeable on its own — but NOT once coupled. A Mutual (M) couples the two elements' branch currents, and each branch current runs from that element's own terminal 1 to its terminal 2, so swapping one of them reverses the sign of the coupling. Terminal 1 is the dotted end.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| L | 1 | nH | shown |
| C | 1 | pF | shown |
Ferrite Bead (Bead)
A two-terminal linear element: Rdc in series with a parallel L / Rp / Cp tank.
A bead is not an inductor and not a series RLC. The number a data sheet gives — "600 Ω at
100 MHz" — is an impedance, and the whole point of the part is that most of it is resistive at
the frequency it is quoted at. That is what makes a bead absorb rather than reflect, and why it damps
a supply rail where an inductor of the same reactance would ring against the decoupling capacitance.
An inductor's loss is zero and a series RLC's is a constant R; a bead's rises from nothing at DC to
a maximum at its ferromagnetic resonance and falls again above it.
Each element stands for a real mechanism:
| Parameter | What it is |
|---|---|
Rdc |
The winding's own resistance. It is what the part looks like at DC, and in a power rail it is what sets the drop. |
L |
The low-frequency inductance — what the impedance rises along. |
Rp |
The core loss. It caps the impedance: at the parallel resonance the reactive branches cancel and |Z| is Rdc + Rp, which is the peak a data sheet plots. Nothing else sets that peak, so a bead entered without it has no maximum at all. |
Cp |
The parallel (inter-turn) capacitance — what takes the impedance back down above resonance. A bead is not a filter above its own resonance, and this is why. |
Zero means not modelled for each of the three parallel elements, never "a short" or "a zero-ohm
resistor". Rp = 0 removes the loss branch and leaves an ideal L; Cp = 0 removes the capacitive
branch and the impedance goes on rising; L = 0 leaves a plain Rdc.
At DC the bead is Rdc and nothing else, because the inductive branch shorts the tank out. That
is both the physics and what a DC operating point needs from this part — a bead in a supply rail must
not open it.
A bead's inductance falls with DC bias current, sometimes by most of it, and this is a linear element. The four numbers describe the part at whatever current they were measured at, which is why a bead chosen from a small-signal impedance curve can behave quite differently in the rail it was chosen for.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. The two terminals are interchangeable — swapping them gives the same circuit.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| Rdc | 0.01 | Ω | shown |
| L | 0 | uH | shown |
| Rp | 0 | Ω | shown |
| Cp | 0 | pF | shown |
Nonlinear Capacitor (NonlinearC)
A capacitor whose capacitance varies with voltage, C(V), modelled as a polynomial (Taylor) series.
Enter the coefficients directly, or generate them from a C–V curve with the C–V Editor. C0 is the
constant term; C1, C2, … are the higher-order coefficients, added in the editor or generated by
the C–V Editor. Full treatment:
The Nonlinear Capacitor & the C–V Editor.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. C(V) is evaluated at V(terminal 1) − V(terminal 2), so any odd coefficient (C1, C3, …) makes the two terminals distinct. With C0 alone the capacitor is linear and they are interchangeable.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| C0 | 1 | pF | shown |
Mutual Inductance (M)
Couples two existing inductors — named by instance — with a mutual inductance, the basis for
transformers and coupled resonators. It has no pins of its own; Inductor1 and Inductor2 are the
instance names of the two coupled inductors and M is the mutual inductance between them.
Either name may be any part that carries an inductor: an L, an SRLC, a
PRLC, an SRL, an SLC, a PRL or a PLC — every one of them
holds its inductor current on a branch the coupling can act on, and every one spells its value L.
Naming anything else — an SRC or a PRC included, since neither has an inductor — is
reported as an error when the design is elaborated.
No terminals — this component connects to nothing on the canvas.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| Inductor1 | "L1" | — | shown |
| Inductor2 | "L2" | — | shown |
| M | 0 | pH | shown |
Ideal Transformer (Transformer)
A lossless transformer with turns ratio N:1, primary to secondary:
V(p+) − V(p−) = N · (V(s+) − V(s−)), and the secondary current is N times the primary's, flowing
the other way.
Four pins on the corners — the primary p+, p− on the left, the secondary s+, s− on the right —
with the dots on p+ and s+: a voltage rising at one dotted end rises at the other. Seen from the
primary, a load on the secondary looks N² times larger, so N=2 between 50 Ω ports matches a
200 Ω source to a 50 Ω load.
Being ideal, it has no winding inductance and no leakage: it passes DC as readily as RF, at every frequency, harmonic balance included. For a transformer whose windings have inductance — one that blocks DC and rolls off at low frequency — use two inductors and a Mutual.
| Net | Terminal |
|---|---|
| 1 | p+ |
| 2 | p- |
| 3 | s+ |
| 4 | s- |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| N | 1 | — | shown | Turns ratio, primary to secondary: V(primary) = N × V(secondary), and the currents in the opposite ratio. Ideal — lossless at every frequency, DC included. |
Matching Network (Match)
A synthesised bandpass matching network placed as a single two-pin component, ground being the common
return. Its whole design rides in a hidden Design parameter, so what it stamps is a property of the
design rather than of the component type: the ladder it contains is the synthesised one minus
whatever the two external terminations already supply, since absorbing those reactances is the point.
Edit it in the Match Designer.
The synthesis, the Designer's four panes, the Norton-transform rack, the Probe button and a worked two-stage interstage example are all in The Match Component. Read that before placing one — this entry is only the component's parameter table.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. Not interchangeable: terminal 1 is the R1 side and terminal 2 the R2 side. The synthesised ladder is stored R1-first, so swapping the two reverses every asymmetric match.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| F1 | 1.8 | GHz | — |
| F2 | 2.2 | GHz | — |
| Bands | 1 | — | — |
| F3 | 0 | GHz | — |
| F4 | 0 | GHz | — |
| F5 | 0 | GHz | — |
| F6 | 0 | GHz | — |
| Order | 4 | — | — |
| Response | ChebyshevFano | — | — |
| Form | Bandpass | — | — |
| R1 | 50 | Ω | — |
| R2 | 10 | Ω | — |
Sources
DC Voltage Source (Vdc)
A fixed DC voltage — gate and drain bias supplies. Vdc is the voltage.
| Net | Terminal |
|---|---|
| 1 | + |
| 2 | − |
The nets of an instance line, in this order. Vdc is the voltage at + relative to −.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| Vdc | 0 | V | shown |
Tone Source (VTone)
A single-tone (sinusoidal) voltage source for harmonic balance, with an optional DC offset. V is the
tone amplitude, Freq the tone frequency, and Vdc a DC offset.
| Net | Terminal |
|---|---|
| 1 | + |
| 2 | − |
The nets of an instance line, in this order. V and Vdc are the voltage at + relative to −, and Phase is referred to the same pair.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| V | 1 | V | shown | — |
| Freq | 1 | GHz | shown | — |
| Phase | 0 | deg | — | — |
| Vdc | 0 | V | — | — |
| PhaseNoise | — | — | — | The source's phase noise, single-sided L(f) in dBc/Hz at offsets from the carrier: offset:level pairs such as 1kHz:-80, 10kHz:-100, 1MHz:-140. Straight lines in dB against log-frequency between points; the first segment's slope continues below the first point. Only an envelope run simulates it, as a random phase drawn from the analysis's Seed; harmonic balance, loadpull and S-parameters run at steady state and ignore it. Blank: none. |
| PhaseNoiseFloor | — | — | — | The phase noise beyond the mask's last point, dBc/Hz. Blank: the last point's level. |
Current Tone Source (ITone)
The current-source dual of VTone — a single-tone sinusoidal current source with an
optional DC offset. I is the tone amplitude, Freq the tone frequency, and Idc a DC offset. Use
it to drive a node with a known current rather than a known voltage: an ideal current source has
infinite output impedance, so it sets the current through a branch and lets the network decide the
voltage.
The arrow says which way the current goes. A positive I delivers current into pin 1 (the
arrowhead end, the top pin as drawn) and draws it out of pin 2. Note this is the opposite of the
SPICE I element, which sinks current from its first node; circuitRF uses one direction convention
for every source it has, and the glyph states it so you never have to remember which.
Like VTone, the + button in the parameter editor turns it into a multi-tone source: the scalar
I/Freq migrate to I[1]/Freq[1] and each further tone gets its own Freq[n], I[n] and
Phase[n].
It contributes no conductance at all, and none whatsoever at frequencies it is not exciting. A node driven only by a current source therefore has no DC path to ground and the matrix is singular — that is the physics of the element, not a defect. Give the node a resistor, a termination or a bias path and it solves.
| Net | Terminal |
|---|---|
| 1 | + |
| 2 | − |
The nets of an instance line, in this order. A positive I is delivered INTO the + terminal and drawn out of the −, which is what the arrow on the + lead points at. Note this is the opposite sense to the VCCS's arrow, which is a controlled source and is drawn the way controlled sources are.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| I | 1 | mA | shown | — |
| Freq | 1 | GHz | shown | — |
| Phase | 0 | deg | — | — |
| Idc | 0 | mA | — | — |
| PhaseNoise | — | — | — | The source's phase noise, single-sided L(f) in dBc/Hz at offsets from the carrier: offset:level pairs such as 1kHz:-80, 10kHz:-100, 1MHz:-140. Straight lines in dB against log-frequency between points; the first segment's slope continues below the first point. Only an envelope run simulates it, as a random phase drawn from the analysis's Seed; harmonic balance, loadpull and S-parameters run at steady state and ignore it. Blank: none. |
| PhaseNoiseFloor | — | — | — | The phase noise beyond the mask's last point, dBc/Hz. Blank: the last point's level. |
RF Power Source (P1Tone)
An RF source specified by available power with an internal source impedance — the natural drive
for power-amplifier and loadpull work. It can also serve as an S-parameter port (via Num), and
accepts per-harmonic source terminations Z[k] for harmonic source-pull.
Num— S-parameter port index, sharing one pool with Term.Pavl— available power.Z— fundamental source impedance;Freq— fundamental frequency;Phase— phase.Z[k]— per-harmonic source termination:Z[0]is baseband/DC,Z[2]the second harmonic, and so on. Added in the parameter editor.
| Net | Terminal |
|---|---|
| 1 | + |
| 2 | − |
The nets of an instance line, in this order. + is the RF output and − the reference, normally ground — Term's own convention, since this is a source with Term's internal resistance in front of it. The source's internal impedance Z is in series with +.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| Num | 1 | — | shown | — |
| Pavl | 0 | dBm | shown | — |
| Z | 50 | Ω | shown | — |
| Freq | 1 | GHz | shown | — |
| Phase | 0 | deg | — | — |
| PhaseNoise | — | — | — | The source's phase noise, single-sided L(f) in dBc/Hz at offsets from the carrier: offset:level pairs such as 1kHz:-80, 10kHz:-100, 1MHz:-140. Straight lines in dB against log-frequency between points; the first segment's slope continues below the first point. Only an envelope run simulates it, as a random phase drawn from the analysis's Seed; harmonic balance, loadpull and S-parameters run at steady state and ignore it. Blank: none. |
| PhaseNoiseFloor | — | — | — | The phase noise beyond the mask's last point, dBc/Hz. Blank: the last point's level. |
Multi-Tone RF Power Source (PnTone)
The multi-tone sibling of P1Tone — an available-power RF source that injects several
carriers at once from a single component, the natural drive for two-tone intermodulation work. A
freshly placed PnTone is already a two-tone source (tones 1 and 2, at 1.99 and 2.01 GHz); the
+ and − buttons in the editor add and remove tones. Each tone has its own Freq[i],
Pavl[i] and Phase[i]; all tones share one source impedance Z and the same per-band terminations
Z[k], where each mixing product is terminated by the band its frequency falls in.
Unlike P1Tone, PnTone is not an S-parameter port — it has no Num. The tones a PnTone drives must
match the tones declared on the Harmonic Balance analysis: the analysis
owns the mixing grid, and the source just supplies power at those frequencies.
| Net | Terminal |
|---|---|
| 1 | + |
| 2 | − |
The nets of an instance line, in this order. + is the RF output and − the reference, normally ground — Term's own convention, since this is a source with Term's internal resistance in front of it. The source's internal impedance Z is in series with +.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| Freq[1] | 1.99 | GHz | shown | — |
| Pavl[1] | 0 | dBm | shown | — |
| Phase[1] | 0 | deg | — | — |
| Freq[2] | 2.01 | GHz | shown | — |
| Pavl[2] | 0 | dBm | shown | — |
| Phase[2] | 0 | deg | — | — |
| Z | 50 | Ω | shown | — |
| PhaseNoise | — | — | — | The source's phase noise, single-sided L(f) in dBc/Hz at offsets from the carrier: offset:level pairs such as 1kHz:-80, 10kHz:-100, 1MHz:-140. Straight lines in dB against log-frequency between points; the first segment's slope continues below the first point. Only an envelope run simulates it, as a random phase drawn from the analysis's Seed; harmonic balance, loadpull and S-parameters run at steady state and ignore it. Blank: none. |
| PhaseNoiseFloor | — | — | — | The phase noise beyond the mask's last point, dBc/Hz. Blank: the last point's level. |
Modulated RF Source (MOD_Source)
A modulated RF source — LTE, NR, CW, a pulsed-CW train, FSK (wireless M-Bus, Bluetooth LE), DBPSK (Sigfox), chirp spread spectrum (LoRa) or an imported I/Q waveform — for the
Envelope analysis: ACLR/ACPR, EVM-style error, CCDF, AM-AM/AM-PM and
two-carrier intermodulation with real signals rather than tones. One MOD_Source holds any number of
carriers around its centre frequency Fc; Pavg is the total average available power behind the
source impedance Z.
Carrier[i]— one carrier, written as a description string, e.g."NR;BW=20MHz;SCS=30kHz;Mod=64QAM;Off=-200MHz;P=0;Seed=1": the standard (LTE,NR,CW,FILE), channel bandwidth, NR subcarrier spacing, modulation, offset fromFc, relative power (dB) and the random-data seed.BW,SCSandOfftakeHz,kHz,MHzorGHz; a bare number is in Hz. AFILEcarrier plays a two-column I/Q text file,File=its path andFs=its sample rate (taken from the file's# sample_rate_hzheader when absent). APCWcarrier is a pulse train,"PCW;PRI=100us;PW=50us;Rise=0.5us;Fall=0.5us;Delay=10us;Off=0;P=0": the pulse repetition interval, the width (50 % to 50 %), the 10–90 % edge times and the off-time before the rising edge (centred in the PRI when absent). Its time fields takes,ms,us(orµs) orns; a bare number is in seconds. APCWcarrier must be the source's only carrier, andPavgis then the pulse-top power, not the record average: see Pulsed CW. AnFSKcarrier is binary continuous-phase FSK,"FSK;Rb=100kbps;Dev=45kHz;BT=0.5;Data=PN9;Off=0;P=0": the bit rate (bps,kbpsorMbps), the peak deviation, the Gaussian filter's BT (absent: no filter) and the data —PN9,PN15or a fixed pattern such as10110100, one period of which is the record. It too must be the source's only carrier: see FSK. ADBPSKcarrier,"DBPSK;Rb=100bps;Data=PN9;Off=0;P=0", takes the sameRbandData(the Sigfox uplink: DBPSK), and aCSScarrier,"CSS;SF=7;BW=125kHz;Off=0;P=0", a spreading factor and a chirp bandwidth (LoRa: CSS); each must be the source's only carrier.Record— periodic record length (s), whole 0.5 ms slots.Clip— target PAPR (dB) for clip-and-filter; absent means unclipped (the natural OFDM PAPR, about 11–12 dB).Shaping— out-of-channel spectral floor (dBc), oroff.
Select the source and press Design signal… in the inspector to open the Signal Designer: the carriers and presets, or a custom I/Q file of your own, with the spectrum, the CCDF and the EVM of the signal before you simulate it.
In a harmonic-balance or loadpull run a MOD_Source is a CW tone at Fc carrying Pavg — the signal's
average power, or for a pulsed-CW source the pulse-top power, the steady state of a pulse that never ends;
in an S-parameter run it is the passive impedance Z.
| Net | Terminal |
|---|---|
| 1 | + |
| 2 | − |
The nets of an instance line, in this order. + is the RF output and − the reference, normally ground — Term's own convention, since this is a source with Term's internal resistance in front of it. The source's internal impedance Z is in series with +.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| Fc | 2 | GHz | shown | — |
| Pavg | 10 | dBm | shown | — |
| Z | 50 | Ω | shown | — |
| Carrier[1] | "LTE;BW=20MHz;Mod=64QAM;Off=0;P=0;Seed=1" | — | shown | — |
| Record | 1e-3 | — | — | — |
| PhaseNoise | — | — | — | The source's phase noise, single-sided L(f) in dBc/Hz at offsets from the carrier: offset:level pairs such as 1kHz:-80, 10kHz:-100, 1MHz:-140. Straight lines in dB against log-frequency between points; the first segment's slope continues below the first point. Only an envelope run simulates it, as a random phase drawn from the analysis's Seed; harmonic balance, loadpull and S-parameters run at steady state and ignore it. Blank: none. |
| PhaseNoiseFloor | — | — | — | The phase noise beyond the mask's last point, dBc/Hz. Blank: the last point's level. |
Voltage-Controlled Current Source (VCCS)
An ideal transconductance: the current it delivers is G times the voltage across a separate,
purely-sensing control pair, optionally delayed by T.
I = G · e^(−jωT) · (V(ctrl+) − V(ctrl−))
Four terminals in two pairs — the output pair (out+ top, out− bottom) carries the current, and
the control pair (ctrl+, ctrl−, on the left) senses the controlling voltage. The control pair
draws no current at all, which is what makes the source ideal and what makes the device
unilateral: nothing travels backwards through it. G is the transconductance, in siemens.
T is a time delay (hidden until you set it; 0 is no delay). It multiplies the gain by
e^(−jωT): unit magnitude, and a phase lag that grows in proportion to frequency, so the source has a
constant group delay of T. A positive T lags. DC is unaffected, since e^0 = 1. T is the
only source of phase: G itself is a real number.
The arrow says which way the current goes, and it points down: a positive G and a positive
control voltage draw current in at out+ and out at out−. That is the SPICE G element's own
direction, and the way a small-signal transconductance is drawn in a device model — the controlled
source sinks drain current from the drain node. So a VCCS across a grounded load resistor is
inverting, and a 50 Ω, G = 10 mS stage measures S21 = −0.25.
Note the VCCS's arrow points the opposite way to ITone's. That is not an inconsistency to squint past: ITone is an independent source and delivers current to its arrow pin, while the VCCS is a controlled source drawn the way controlled sources are drawn. Read each symbol's own arrow.
The VCCS is a linear device, so it is stamped into the matrix at every frequency the
simulator solves at: DC, S-parameters, and every retained harmonic of a harmonic-balance run,
plus everything built on those (parametric sweeps, loadpull, loadpull-pursuit). In HB it lives in the
linear partition alongside the resistors and lines, and each harmonic sees its own delay phase,
e^(−jkω₀T). Apart from that delay, an ideal transconductance has no frequency
dependence and no compression. If you need either, the device you want is an
SDD, whose equations can state them. The same is true of
ITone.
| Net | Terminal |
|---|---|
| 1 | out+ |
| 2 | out- |
| 3 | ctrl+ |
| 4 | ctrl- |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| G | 10 | mS | shown | Transconductance: the output current per volt across the control pair. |
| T | 0 | ps | — | Delay applied to the gain, as a time: the transfer becomes gain x e^(-jwT), a phase that grows in proportion to frequency. 0 is no delay, and DC is unaffected. |
Voltage-Controlled Voltage Source (VCVS)
An ideal voltage gain: the voltage it holds across its output pair is E times the voltage across a
separate, purely-sensing control pair, optionally delayed by T.
V(out+) − V(out−) = E · e^(−jωT) · (V(ctrl+) − V(ctrl−))
Four terminals in two pairs, laid out exactly as the VCCS's are — the output pair
(out+ top, out− bottom) and the control pair (ctrl+, ctrl−, on the left), which draws
no current at all. E is a voltage ratio and carries no unit.
T is a time delay, exactly as on the VCCS: the gain becomes E · e^(−jωT), and E
itself is a real number.
The two tiles differ in one thing: what the diamond carries. The VCCS's arrow points at the current it delivers; the VCVS has a ± pair down its axis instead, because there is no current direction to point at. A VCVS states a potential difference and whatever current the rest of the circuit draws through it flows — including none, if nothing is connected across the output pair. That is the ideal source's own behaviour, not a limitation.
Being ideal, its output impedance is zero: it holds E times the control voltage no matter what
it is loaded with. Put a series resistor after it if you want a source with an impedance.
Like the VCCS, the VCVS is a linear device stamped at every frequency the simulator solves at, harmonic balance included, with each harmonic seeing its own delay phase. It carries a branch-current unknown of its own where the VCCS carries none — a relation between node voltages is not something admittances can express — but nothing about that is visible from outside. For a gain that varies with frequency in any other way, or with drive or bias, the device you want is an SDD.
The output pair gets no conductance of its own, so — exactly as with ITone — an output node with nothing else attached to it has no DC path to ground and the matrix is singular. Load it.
| Net | Terminal |
|---|---|
| 1 | out+ |
| 2 | out- |
| 3 | ctrl+ |
| 4 | ctrl- |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| E | 1 | — | shown | Voltage gain: the output voltage per volt across the control pair. |
| T | 0 | ps | — | Delay applied to the gain, as a time: the transfer becomes gain x e^(-jwT), a phase that grows in proportion to frequency. 0 is no delay, and DC is unaffected. |
Operational Amplifier (OpAmp)
A triangle with the inverting input in− above the non-inverting input in+, and the output out
at its point, referenced to ground.
With A=0, the default, it is ideal — infinite open-loop gain. Its inputs draw no current and are
held at the same voltage, and the output delivers whatever current that takes, so the feedback network
alone sets the gain: an inverting stage with Rin and Rf has a gain of exactly −Rf/Rin.
A non-zero A makes it a finite-gain amplifier, V(out) = A · (V(in+) − V(in−)), with an output
resistance Rout behind it. As A grows, the answers converge on the ideal ones. Rout acts only
with a finite A.
It is linear and the same at every frequency: there is no bandwidth, slew rate or output swing limit, so an op-amp left without negative feedback has an output nothing bounds. For a gain that rolls off, put the roll-off in the circuit around it.
| Net | Terminal |
|---|---|
| 1 | in+ |
| 2 | in- |
| 3 | out |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| A | 0 | — | — | Open-loop voltage gain. 0, the default, is the ideal op-amp: infinite gain, so the inputs are held at the same voltage and the feedback network alone sets the gain. |
| Rout | 0 | Ω | — | Output resistance. It acts only with a finite A; the ideal op-amp has none to act against. |
| Pins | 3 | — | — | 3 for the tile without supply pins, 5 for the one with them. Fixed by the tile — place the other one to get the other count. The supply pins carry no current. |
Operational Amplifier with supply pins (OpAmp5)
The same op-amp with its supply pins drawn, V+ above and V− below, for schematics that wire the
supplies. They carry no current and change nothing: the op-amp behaves exactly as the three-pin tile
does. A supply pin left connected to nothing is a node nothing sets, so connect both, or place the
three-pin OpAmp instead.
The supply pins are cosmetic only.
| Net | Terminal |
|---|---|
| 1 | in+ |
| 2 | in- |
| 3 | out |
| 4 | V+ |
| 5 | V- |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| A | 0 | — | — | Open-loop voltage gain. 0, the default, is the ideal op-amp: infinite gain, so the inputs are held at the same voltage and the feedback network alone sets the gain. |
| Rout | 0 | Ω | — | Output resistance. It acts only with a finite A; the ideal op-amp has none to act against. |
| Pins | 5 | — | — | 3 for the tile without supply pins, 5 for the one with them. Fixed by the tile — place the other one to get the other count. The supply pins carry no current. |
Terminals & ports
Ground (GND)
The global reference node (net 0). No parameters.
Term
An S-parameter port: a numbered, reference-impedance termination where the simulator excites and
measures. Num is the port index, auto-assigned at placement; Z is the reference impedance. See
Pins, Ports & Terms for how it differs from a Pin.
Outside S-parameters a Term is a load of Z to its reference: its resistance (the real part of Z)
in a DC run, and Z at every harmonic in a harmonic-balance or loadpull run. A bias or a current returning
through it flows, as it would through the instrument it stands for. Put a DC block in front of a Term on a
biased node, exactly as on a bench. A Term inside a cell is ignored in every analysis.
| Net | Terminal |
|---|---|
| 1 | + |
| 2 | − |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| Num | 1 | — | shown |
| Z | 50 | Ω | shown |
Grounded Term (TermG)
A Term whose second port is permanently grounded, presenting as a one-port. It is a packaging convenience rather than a parallel model: it uses Term's own engine component and glyph exactly, with the ground symbol drawn at Term's port-2 location, so a schematic that swaps Term + GND for a TermG is electrically identical.
One terminal, + — an instance line writes a single net.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| Num | 1 | — | shown |
| Z | 50 | Ω | shown |
Pin
A cell's interface terminal — connectivity only, no electrical model. Pins on a cell's symbol are how
the cell connects to the parent that instances it. Num is the interface port index, auto-assigned;
Name is an optional label, and extraction uses P{Num} when it is blank. An optional Polarity of
Plus or Minus, set in the editor, forms a differential pair sharing one Num.
One terminal, 1 — an instance line writes a single net.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| Num | 1 | — | shown |
| Name | — | — | — |
Current Probe (IProbe)
A 0 V series ammeter placed in a branch to read its current. Its instance name — Iout, say — is how
measurements reference that current: I("Iout", 1). No parameters.
| Net | Terminal |
|---|---|
| 1 | np |
| 2 | nm |
The nets of an instance line, in this order. A 0 V ammeter: the current it reports flows np to nm. Swapping the two negates every measurement that reads it.
No parameters.
Voltage Probe (VProbe)
A one-terminal voltage probe. Drop it anywhere on a wire and that net is reported under the probe's
instance name — Vout, say. That name is what the trace picker lists and what a measurement
expression reads: V("Vout").
It is a label, not a part. It has one terminal, so it cannot bridge two nets; the elaborator builds no model for it, so it stamps nothing; and a design simulates identically with every VProbe deleted. Placing one can never change an answer — it can only add a name to it.
On an unnamed wire the probe's name becomes the net's name. There is one row in the results, called
Vout, and no n7 beside it — the automatic name was never a name anyone chose, and two rows for one
point in the circuit is one row too many.
On a wire you have already labelled, both names appear. The label is not overwritten: a wire
labelled n_drain with a Vout probe on it shows up twice — as n_drain and as Vout — carrying the
same voltage. The probe is an alias there, and either name plots and measures the same node.
Two rules keep the names unambiguous, and breaking either refuses the run rather than reporting:
- Two VProbes may not share a name.
- A VProbe may not share a name with a net.
A VProbe that touches nothing is reported in the Messages panel and drops out of the results, rather than reporting a plausible number for a point you never probed. So is one placed on ground, which is 0 V by definition.
It is the one component you can drag off a wire. Every other symbol takes its wires with it when you move it, because moving the picture must never re-wire the circuit. A probe has nothing to re-wire, so dragging it leaves the drawing exactly as it was and puts the probe wherever you dropped it — pick it up, look somewhere else, run again, with no repair work in between. Rotating it behaves the same way, and a wire dragged out from under a probe simply leaves it behind.
Select the probe and its wire together and they move as one, so the probe stays on the net.
One terminal, v — an instance line writes a single net. One terminal, at the arrow's tip. It taps the net it touches and names it after the instance; there is no second terminal to get the wrong way round, and nothing it can short together.
No parameters.
Stability Probe (WSProbe)
A stability probe, placed in a node so that it splits the node into a generator-side terminal (G)
and a load-side terminal (L). It implements T. A. Winslow, General Circuit Analysis Using The
WSProbe (2023); every quantity below is that document's, under its own name.
Electrically it is an IProbe — a 0 V short — and it is placed the same way: drop it onto the wire whose node you want to look at, and circuitRF deletes the stretch of wire between its two pins so the probe breaks into the run instead of being shorted by it. It perturbs nothing, so a design simulates identically with every WSProbe deleted. It takes no parameters.
The letters are the orientation. G is the generator-side terminal and L the load-side one:
ZG looks out of G, ZL out of L. Rotating or mirroring the symbol moves the drawing and never
the pin order, so swapping the two means swapping the wires — which swaps every G/L-labelled
output and negates nothing else.
What it produces is not a number but a matrix. An S-parameter run with any WSProbe in it writes a
wsp cube — 2N x 2N for N probes — and six named outputs per probe: H0 and Y0, the driving-point
impedance and admittance; ZG and ZL, the bidirectional impedances; LG, the bilateral loop gain;
and F = 1 - LG. Two stability margins, SM_Y0 and SM_H0, come with them. Everything else the
document derives — every other loop gain, the reduced two-port at the probe, the probe-pair blocks,
the global loop gains over a set of probes — is post-processing of that one matrix, and is available
in the Data Display's trace card and in a measure line.
Reading a node for stability is two plots, not one. Plot 1/H0 and 1/Y0 on a polar chart and
look for a clockwise crossing of the negative real axis; the trace card reports the frequencies it
finds, or none. Both must be checked, because a zero can hide the pole in one of them but never in
both — a series resonance shows in 1/Y0 alone and a parallel one in 1/H0 alone.
The stability margin is a distance, and the search is the detector. SM_Y0 and SM_H0 are
unitless numbers in [0, 1], shown in dB (20*log10), and the trace card prints each one's minimum
beside the crossing search that pairs with it. A node with positive resistance on both sides can never
read below -12 dB, so anything under that line certifies negative resistance on one side; the run
reports any probe whose margin falls below the analysis' MarginThreshold (default -15 dB) as worth
looking at. That report is a note, not a warning: a low margin is somewhere to look, not a failure.
The WSProbe has its own chapter — every quantity with its equation, the probe pairs, the global loop gains, the stability envelope, the probe under harmonic balance, the NDF, and an appendix on stability analysis itself.
| Net | Terminal |
|---|---|
| 1 | G |
| 2 | L |
The nets of an instance line, in this order. G is the generator-side terminal, L the load-side. ZG looks out of G, ZL out of L; swapping them swaps every G/L-labelled output and negates nothing else.
No parameters.
Oscillator Probe (OscProbe)
The marker an oscillator analysis needs: it says where in the circuit the oscillation is looked for. Place exactly one, where the oscillation is strong:
Mode=series(the default): in the oscillator's loop, the way an IProbe is placed. Drop it onto a wire and it breaks into the wire.Mode=shunt: across the resonator, often from the tank's live side to ground.
In every other analysis it does nothing: a short in series, an open in shunt. So a design runs the same with it as without it.
Under the oscillator analysis it holds a generator at the oscillation frequency only. In shunt it is a voltage generator, and the analysis finds the amplitude and frequency at which it draws no current. In series it is a current generator, and the analysis finds where it holds no voltage. Either way the generator does no work at the answer, so the circuit is oscillating on its own. Its two terminals are interchangeable.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. Interchangeable. In series (Mode=series) it sits IN the oscillator's loop; across the resonator (Mode=shunt) it joins the two sides of the tank, often one of them ground.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| Mode | series | — | shown | series: the probe sits in the oscillator's loop and is a short in every other analysis. shunt: it sits across the resonator and is an open. Under the oscillator analysis, series inserts a current generator and shunt a voltage generator, at the oscillation frequency only. |
Tuner / SourceTuner / LoadTuner
A programmable RF termination. The three variants are the same engine component with different glyphs and net ordering — match the symbol to its role. SourceTuner sits on the source side, LoadTuner on the load side.
Z[1]— the fundamental termination. Required, and it accepts complex literals such as50+j*10. AddZ[2], … in the editor, orG[k]to give a reflection coefficient instead.Zdefault— the catch-all termination for harmonics not otherwise specified, and the impedance the tuner presents at DC.Z0— the reference impedance for anyG[k]entry.BiasTee—onoroff, chosen from a picker.onbuilds the internal bias-tee and DC supply, which the loadpull directive requires. With itoffthe tuner is RF-only: there is no DC path through it to the reference node.Vbias— the DC bias at the DUT-facing port when the bias-tee is on.ShowBias—trueorfalse, chosen from a picker. Display only: it draws the bias-tee on the glyph and never reaches the engine, so the extracted netlist is identical either way.
One terminal, 1 — an instance line writes a single net.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| Z[1] | 50 | Ω | shown |
| Zdefault | 1e-6 | Ω | — |
| Z0 | 50 | Ω | — |
| BiasTee | off | — | — |
| Vbias | 0 | V | — |
| ShowBias | false | — | — |
Which analyses a tuner works in
All five that terminate a circuit: DC, S-parameters, harmonic balance, loadpull and loadpull pursuit. It is an ordinary linear component, so a parametric sweep wrapping any of them sweeps it like anything else.
How its frequency response is defined
A tuner is not a fitted network. It presents the impedance you declared, exactly, with no interpolation between entries and no roll-off. Which entry it presents depends on the analysis:
| Analysis | What the tuner presents |
|---|---|
| DC | Zdefault — but behind the ideal DC-block capacitor, so with BiasTee=on the DC seen at the pin is the supply through the choke, and with BiasTee=off the pin is open at DC. |
| S-parameters | Z[1], flat across the whole frequency sweep. There is no harmonic structure outside harmonic balance, so the declared fundamental is the only value in play — Z[2], Z[3], … are ignored. |
| Harmonic balance | Z[k] at harmonic k, where k is the analysis fundamental's k-th multiple. Anything not declared falls back to Zdefault, as does any frequency that is not on the harmonic grid. |
| Loadpull / pursuit | The same per-harmonic rule, except that the harmonic being tuned takes its value from the grid point under test rather than from Z[k]. |
So the answer to "what does Z[2] do in an S-parameter run?" is nothing: declare the band you care
about in Z[1], and use several S-parameter analyses if you want several terminations.
In loadpull and pursuit, the SourceTuner is also the RF generator
A loadpull run needs a drive as well as terminations, and the SourceTuner supplies it: the loadpull and pursuit engines assign it the source role, which stamps a single-tone RF generator inside it, behind the impedance it presents. The generator is calibrated to available power — |Vs| = √(8·Pavl·Re Z1) — so the power you ask for and the impedance the DUT is driven from stay consistent as either one moves across the sweep.
The drive level is not a tuner parameter. There is no Pavl row on the component, because the
sweep over drive belongs to the run, not to the part. The ladder is set in the analysis: Pin start
(dBm), Pin max (dBm) and Pin step (dB) in the Loadpull and Loadpull Pursuit setup, walked
upward from the start until compression is reached or the cap stops it.
The source role is assigned by the loadpull and pursuit engines only. Place a SourceTuner on a plain harmonic-balance testbench and it behaves as a passive termination like the other two glyphs — put a P1Tone or a tone source on the bench for the drive.
Transmission lines
Ideal Transmission Line (TLIN)
An ideal transmission line of characteristic impedance Z, stated one of two ways:
- Electrical (the default): electrical length
Eat a reference frequencyF. Optional lossAis the total in dB atF, scaling in proportion to frequency. - Physical: length
Lwith effective permittivityEeff(default 1, an air line), so the electrical length is θ(f) = 2π·f·L·√Eeff / c₀ with no reference frequency needed. Loss is per unit length:Ac(conductor, scaling as √f) andAd(dielectric, scaling as f), both in dB/m atFand both 0 by default.
A line states E or L, never both; Eeff below 1, A together with L, and Ac or Ad without
F are refused. In the parameters dialog, Use physical length / Use electrical length switches
form, converting at F (or at 1 GHz when there is none) so the line does not change; the new L is
written in the technology's length unit. For a physical-form line, circuitrf explain reports the
electrical length it resolves to at F.
TLIN:TL1 a b Z=50 Ohm L=25 mm Eeff=3.2 Ac=4 Ad=2 F=2 GHz
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. The two terminals are interchangeable: the line is uniform, so neither end is the input.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| Z | 50 | Ω | shown | Characteristic impedance, real. |
| E | 90 | deg | shown | Electrical length at F (the angle form). Or state the line physically instead: L, its length, with Eeff, the effective permittivity (default 1, an air line; below 1 is refused), so θ(f) = 2π·f·L·√Eeff/c₀. E and L together are refused. The angle form's loss is A, total dB at F, ∝ f; the physical form's is Ac (conductor, ∝ √f) and Ad (dielectric, ∝ f), both dB/m at F, both default 0. A with L is refused. |
| F | 1 | GHz | shown | Reference frequency: where E is stated, and where A, Ac and Ad are given. A physical line needs it only for Ac or Ad, and is refused without it then. |
Coupled Line (CLIN)
An ideal, lossless pair of coupled transmission lines over a common ground, specified by its even-mode
impedance Ze, odd-mode impedance Zo and electrical length E at a reference frequency F. Like
TLIN it has no substrate and no layout; it is the four-port to reach for when designing a coupler or a
coupled-line filter section before committing to a geometry.
- Match. All four ports are matched to
Z0whenZe · Zo = Z0²; the default 69.37 Ω / 36.04 Ω pair is matched to 50 Ω. - Coupling. At a quarter wave (
E = 90°atF) the coupled-port voltage is(Ze − Zo) / (Ze + Zo)— about −10 dB for the defaults. - Inhomogeneous media.
Eois the odd mode's electrical length. Left blank, both modes shareE, which is the homogeneous (stripline) case with ideal isolation. Set it shorter thanEto model a medium such as microstrip, where the odd mode travels faster and the directivity is finite.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
| 3 | 3 |
| 4 | 4 |
The nets of an instance line, in this order. Terminals 1 and 2 are the two ends of one line, 3 and 4 the two ends of the other; 3 sits beside 1 and 4 beside 2. Driving 1 of a matched pair, 2 is the through port, 3 the coupled port and 4 the isolated port.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| Ze | 69.37 | Ω | shown | Even-mode characteristic impedance, in ohms: what each line looks like when both are driven in phase. Never below Zo. The pair is matched to Z0 when Ze x Zo = Z0 squared. |
| Zo | 36.04 | Ω | shown | Odd-mode characteristic impedance, in ohms: what each line looks like when the two are driven in antiphase. At a quarter wave the coupling is (Ze - Zo) / (Ze + Zo). |
| E | 90 | deg | shown | Electrical length at F, in degrees — the even mode's, and the odd mode's too unless Eo is set. 90 is a quarter wave, where the coupling peaks. |
| F | 1 | GHz | shown | The frequency E (and Eo) are quoted at. Both scale in proportion to frequency. |
| Eo | — | deg | — | Odd-mode electrical length at F, in degrees. Leave it blank for a homogeneous medium (stripline), where both modes travel together; set it to model an inhomogeneous one such as microstrip, where the odd mode is faster and so electrically shorter. |
Broadside-Coupled Stripline (BCLIN)
A pair of strips on two adjacent conductor layers, one above the other, between two ground planes in one dielectric — the offset broadside-coupled stripline used for tight (3 dB and closer) couplers. Its pins are CLIN's: 1 and 2 are strip A (the upper one), 3 and 4 strip B, with 3 beside 1.
- Geometry.
Wis the strip width (both strips),Othe lateral offset between their centres (0 puts one directly over the other) andLthe length. The cross-section —Hsbetween the strips' facing surfaces,Hafrom strip A up to its ground,Hbfrom strip B down to its ground, the thicknessTandEr— starts empty, which means from the stackup:LayerA(default: the first signal conductor with another signal conductor directly beneath it and a ground plane above and below) andLayerB(the next conductor down) are resolved on the technology, every layer between two surfaces counting toward their spacing. Typing a value into one of those rows overrides the stackup for that row only; with no technology the run says which rows take their standalone defaults. - Physics. The cross-section is solved by circuitRF's own 2D quasi-static field solver (finite
differences on a graded grid, thick strips, the two grounds), once per geometry. Both modes travel at
c/√εr; the even- and odd-mode impedances follow from the capacitance matrix. An asymmetric stack
(
Ha≠Hb, unequal thicknesses) is described by the symmetric average of the two strips, and the run says so when they differ by more than 5 %. - Loss. Conductor loss is integrated over the solved surface-charge distribution (both strips and both grounds), dielectric loss is exact for the homogeneous medium.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
| 3 | 3 |
| 4 | 4 |
The nets of an instance line, in this order. Terminals 1 and 2 are the two ends of one line, 3 and 4 the two ends of the other; 3 sits beside 1 and 4 beside 2. Driving 1 of a matched pair, 2 is the through port, 3 the coupled port and 4 the isolated port.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| W | 0.4 | mm | shown | Width of each strip (both the same). |
| O | 0 | mm | shown | Lateral offset between the strips' centres. 0 puts one directly over the other (tightest coupling); the coupling falls as it grows. |
| L | 10 | mm | shown | Length of the coupled section. |
| Hs | — | µm | — | Separation between the strips' facing surfaces. Empty: from the stackup between LayerA and LayerB, else the standalone default. |
| Ha | — | µm | — | Strip A's top surface to the upper ground plane. Empty: from the stackup between LayerA and LayerB, else the standalone default. |
| Hb | — | µm | — | Strip B's bottom surface to the lower ground plane. Empty: from the stackup between LayerA and LayerB, else the standalone default. |
| T | — | µm | — | Strip thickness (both strips). Empty: each strip takes its own conductor's thickness from the stackup, else 18 µm. |
| Er | — | — | — | Relative permittivity of the dielectric (one value: a stack of several is thickness-averaged). Empty: from the stackup between LayerA and LayerB, else the standalone default. |
| LayerA | — | — | — | The conductor strip A (pins 1 and 2) is drawn on. Default: the first conductor with a signal conductor directly beneath it and ground planes above and below. |
| LayerB | — | — | — | The conductor strip B (pins 3 and 4) is drawn on. Default: the next conductor below LayerA. |
Microstrip Line (MLIN)
A physical microstrip line on the current technology's substrate: W is the conductor width and L
the length. Unlike TLIN, its impedance and loss follow from the geometry and the substrate rather than
being stated. The parameters dialog shows the Z0 (and εeff) the current W gives on the resolved
substrate; type a Z0 there instead and W is set to the width that gives it, as one undoable edit.
The length can be stated electrically instead, as E at F in place of L, exactly as a TLIN's is:
Use electrical length in the parameters dialog converts the current L at the line's own εeff, and
Use physical length converts it back, so switching never changes the line a run simulates. CPWG and
SLIN have the same button. Layout always draws the physical length.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. The two terminals are interchangeable: the line is uniform, so neither end is the input.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| W | 2.9 | mm | shown |
| L | 10 | mm | shown |
| SignalLayer | — | — | — |
| GroundReference | — | — | — |
Grounded Coplanar Waveguide (CPWG)
A coplanar waveguide over a ground plane: a strip of width W with ground copper on the same layer a
gap G from each edge, and a plane under the substrate. The substrate and the backing plane come from
the technology, as an MLIN's do; the gap is the line's own. When the coplanar ground is far from the
strip the line is a microstrip, and CPWG gives the same answer an MLIN would. The parameters dialog shows
the Z0 and εeff at the top frequency of the schematic's S-parameter sweep, and a Z0 typed there sets
W. Against a 2-D field solve its Z0 is within about 2 % over the gaps and widths PCB and MMIC lines
use. Update Layout from Schematic draws the strip, and a ground strip as wide as the strip on each side
of it; the vias that tie those grounds to the plane are yours to add.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. The two terminals are interchangeable: the line is uniform, so neither end is the input.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| W | 1.4 | mm | shown | Centre strip width. |
| G | 0.3 | mm | shown | Gap from the strip's edge to the coplanar ground, the same on both sides. The grounds themselves are taken as wide. The substrate height to the backing plane, its εr and loss, and the copper's thickness come from the technology. |
| L | 10 | mm | shown | Line length. |
| SignalLayer | — | — | — | The conductor the strip and its coplanar grounds are on. Empty: the technology's top conductor. |
| GroundReference | — | — | — | The plane backing the line. Empty: the nearest ground-designated conductor below the signal layer, or above it when there is none below. |
Stripline (SLIN)
A strip of width W buried between two ground planes, centred or offset. The planes are the nearest
ground-designated conductors above and below SignalLayer, and the dielectric between them sets the two
heights, εr and the loss — when that dielectric is several layers of different εr, the line uses their
thickness-weighted mean and says so. A layer without a plane on each side cannot carry a stripline, and
the line is refused rather than simulated as something else. The parameters dialog shows its Z0; a
Z0 typed there sets W. Update Layout from Schematic draws the strip on SignalLayer.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. The two terminals are interchangeable: the line is uniform, so neither end is the input.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| W | 0.65 | mm | shown | Strip width. |
| L | 10 | mm | shown | Line length. |
| SignalLayer | — | — | — | The conductor the strip is on. Its planes are the nearest ground-designated conductors above and below it, and the dielectric between them sets H1, H2, εr and loss. Empty: the topmost conductor that has a plane on both sides. |
Swapping one line type for another
Right-click a TLIN, MLIN, CPWG or SLIN and choose Swap Line Type to turn it into one of the others in place, or choose the type from the type field at the top of its parameters dialog. With several lines selected, the context menu swaps all of them as one undo step; a line that cannot be swapped is named in Messages and the rest still swap.
The instance name, its wiring and its position stay the same, and so do W and L — the impedance
follows from the new line type, and the parameters dialog shows it.
- To CPWG, the gap is the one measured off the artwork when the line came from
Create Schematic from Artwork; otherwise the line's earlier
G, if it had one; otherwise you are asked for it. - To TLIN,
ZandEeffare what the old line has at the top frequency of the schematic's S-parameter sweep, with its loss asAcandAd; the TLIN is in its physical form. - From TLIN,
Wis the line's earlier width when it had one, and otherwise the width that givesZat that frequency (Messages says when it was worked out this way). An electrical-form TLIN'sEbecomes a length. - To SLIN, the signal layer needs a plane above and below it; on any other layer the swap is refused and the line is left as it was.
Nothing is lost: a parameter the new type does not have (CPWG's G, a TLIN's Z, a layer choice) is kept
with the component, so swapping straight back gives the original line exactly. Each type takes its substrate
from the technology. An MBEND, MTEE, MCROSS or MTAPER next to a swapped line stays a microstrip
discontinuity, and Messages says so.
Coupled Microstrip Lines (MCLIN)
A symmetric pair of edge-coupled microstrip lines on the technology's substrate: strip width W,
edge-to-edge gap S and length L. Its pins are CLIN's (1/2 line A, 3/4 line B, 3 beside 1), so a CLIN
in a schematic can be replaced by one without rewiring.
The even- and odd-mode impedances and effective permittivities come from the Kirschning–Jansen
coupled-microstrip equations, with their frequency dispersion and a correction for the strips'
thickness; the two modes keep their own εeff, so the odd mode is faster and the isolation of a coupler
is finite, as on a real board. Conductor, roughness and dielectric loss are MLIN's, per mode. The
published range is W/h and S/h from 0.1 to 10 and εr up to 18; outside it the result is still computed
and the run says it is an extrapolation. On placement W starts at the workspace's 50 Ω width and S
at the same value.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
| 3 | 3 |
| 4 | 4 |
The nets of an instance line, in this order. Terminals 1 and 2 are the two ends of one line, 3 and 4 the two ends of the other; 3 sits beside 1 and 4 beside 2. Driving 1 of a matched pair, 2 is the through port, 3 the coupled port and 4 the isolated port.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| W | 2.9 | mm | shown | Width of each strip. Both strips are the same width; the pair is symmetric. |
| S | 0.5 | mm | shown | Edge-to-edge gap between the strips. Smaller is tighter coupling; the published model covers S/H from 0.1 to 10. |
| L | 10 | mm | shown | Length of the coupled section. Coupling peaks where it is a quarter wavelength, between the even and odd modes' own. |
| SignalLayer | — | — | — | — |
| GroundReference | — | — | — | — |
Broadside-Coupled Microstrip (MBCLIN)
BCLIN's broadside pair without the upper ground: strip B is buried in the dielectric Hb above the
ground plane, strip A sits Hs above it — on the top surface by default (Hd empty), or buried too when
Hd or the stackup puts dielectric over it — and there is air above. Its pins are CLIN's.
Because the medium is not uniform, the field solver runs twice — with the dielectric and with air — and
each mode gets its own impedance and its own εeff; as with MCLIN the modes travel at different speeds,
which limits the directivity. The two strips are never symmetric here (they sit at different heights),
so the pair is always described by the symmetric average of the two, and the run says how far apart
they are. The cross-section rows and LayerA/LayerB follow the stackup exactly as BCLIN's do, with the
one ground plane below strip B.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
| 3 | 3 |
| 4 | 4 |
The nets of an instance line, in this order. Terminals 1 and 2 are the two ends of one line, 3 and 4 the two ends of the other; 3 sits beside 1 and 4 beside 2. Driving 1 of a matched pair, 2 is the through port, 3 the coupled port and 4 the isolated port.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| W | 0.4 | mm | shown | Width of each strip (both the same). |
| O | 0 | mm | shown | Lateral offset between the strips' centres. 0 puts one directly over the other (tightest coupling); the coupling falls as it grows. |
| L | 10 | mm | shown | Length of the coupled section. |
| Hs | — | µm | — | Separation between the strips' facing surfaces. Empty: from the stackup between LayerA and LayerB, else the standalone default. |
| Hb | — | µm | — | Strip B's bottom surface to the lower ground plane. Empty: from the stackup between LayerA and LayerB, else the standalone default. |
| Hd | — | µm | — | Dielectric thickness over the ground. Empty: strip A sits on the top surface (Hd = Hb + T + Hs), unless the stackup puts dielectric over it. |
| T | — | µm | — | Strip thickness (both strips). Empty: each strip takes its own conductor's thickness from the stackup, else 18 µm. |
| Er | — | — | — | Relative permittivity of the dielectric (one value: a stack of several is thickness-averaged). Empty: from the stackup between LayerA and LayerB, else the standalone default. |
| LayerA | — | — | — | The conductor strip A (pins 1 and 2) is drawn on. Default: the first conductor with a signal conductor directly beneath it and a ground plane below. |
| LayerB | — | — | — | The conductor strip B (pins 3 and 4) is drawn on. Default: the next conductor below LayerA. |
Microstrip Bend (MBEND)
A right-angle microstrip bend of width W, optionally mitred, modelled with its discontinuity rather
than as an ideal corner.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. The two terminals are interchangeable. One width and one angle describe the whole bend, so the pins differ only in which way it turns on the canvas.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| W | 2.9 | mm | shown |
| Angle | 90 | deg | shown |
| Miter | 2 | — | shown |
| SignalLayer | — | — | — |
| GroundReference | — | — | — |
Microstrip Curve (MCURVE)
A radiused (curved) microstrip bend: width W, turn Angle (counter-clockwise positive, as MBEND's)
and Radius, the centre-line radius. Where MBEND is a corner with a discontinuity, a curve has no
corner — it is modelled as the line it nearly is, an MLIN of the same width over the effective length
(R − 0.2·W)·|Angle|. The electrical path is a little shorter than the drawn centre line because the
current favours the inner edge.
That rule is published for Radius between 3W and 7W. Outside it the result is still computed and the run says it is an extrapolation; below 2W a bend is more than a change of length and the run tells you to EM-simulate it. A radius below W/2 cannot be drawn and is refused. The reference planes are the two ends of the arc, so an MCURVE butts straight onto an MLIN with no overlap to subtract. In layout it is drawn with true arc edges, which EM, DRC and the exporters flatten to the technology's own tolerance.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. The two terminals are interchangeable. One width, one radius and one angle describe the whole curve, so the pins differ only in which way it turns on the canvas.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| W | 2.9 | mm | shown |
| Angle | 90 | deg | shown |
| Radius | 8.7 | mm | shown |
| SignalLayer | — | — | — |
| GroundReference | — | — | — |
Microstrip Mitred Bend (MMITER)
A chamfered (mitred) microstrip corner: width W, turn Angle (counter-clockwise positive, as MBEND's,
anywhere up to 120°) and miter M. M is the fraction of the corner's outer-to-inner diagonal that
is cut away, measured from the outer corner — the Douville–James definition — so at 90° M = 0.5 runs
the cut corner to corner across the W×W corner square, and larger values cut deeper. On placement M
starts at the Douville–James optimum for the workspace's 50 Ω line, which is the cut that best cancels
the corner's reflection on a right-angle bend; at other angles that same fraction is a reasonable
starting point rather than an optimum.
Electrically the bend is the line it is drawn as — an MLIN of the corner's own centre-line length — plus a small correction for what the corner does that a straight line would not. That correction comes from a table characterised with circuitRF's own planar EM over W/h, εr, angle and miter, and is interpolated in between, so any angle and miter inside the range work, not only 45° and 90°.
The pins sit where the strip is full width again: at 90° with M up to 0.5 these are the edges of the
W×W corner square (MBEND's planes); a deeper chamfer moves them out a little, and the extra line is part
of the part. Draw the MLINs either side from the pins. W/h between 0.35 and 7 and εr between 2.2 and 13
are characterised; outside that the result is still computed and the run says it is an extrapolation.
An angle past 120° or a miter deeper than the table covers (0.6 at 45° and below, 0.8 from 90°) is
refused. Conductor thickness enters through the line part only.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. The two terminals are interchangeable. The chamfer is symmetric about the corner's bisector, so the pins differ only in which way it turns on the canvas.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| W | 2.9 | mm | shown |
| Angle | 90 | deg | shown |
| M | 0.5 | — | shown |
| SignalLayer | — | — | — |
| GroundReference | — | — | — |
Microstrip Gap (MGAP)
The end-to-end gap between two microstrip lines of the same width: W is the width of the line on each
side and S the gap, edge to edge, from one line's end to the other's. Use it wherever a gap is part of
the design — the coupling between the resonators of a gap-coupled filter, an end-coupled feed, or a DC
break in a line — so that the gap is a value you can see, sweep and optimise rather than a distance two
lines happen to be apart. The two terminals are interchangeable.
Electrically the gap is a series capacitance across it and a shunt capacitance from each line end to
ground, from closed-form fits that are stated over 0.5 ≤ W/h ≤ 2, 0.1 ≤ S/W ≤ 1 and 2.5 ≤ εr ≤ 15.
Outside that range the result is still computed and the run says it is an extrapolation. The
capacitances do not change with frequency and carry no loss. Checked against circuitRF's own
electrostatic EM solve on a 0.508 mm, εr 3.66 substrate: up to W/h = 1 the gap's |S21| is within
0.5 dB and its phase within 0.5°; at W/h = 2 the closed form reads the series capacitance 8–14 % low
(|S21| up to 1.3 dB low), and at W/h = 2 with S = W — both ratios at the edge of the range — it reads
it 43 % low, 4.9 dB in |S21|. Where the gap is the design, check it by EM there. S must be greater
than zero: a gap of zero is two lines touching, and the simulation refuses it.
In the layout, MGAP draws no copper. Its layout is its two pins, S apart and each W wide, and
the lines placed on either side are the metal — so when the layout is updated from the schematic, the
two line ends land exactly S apart. Its two pins are on different nets, so LVS reads the gap as a
designed break, not an open.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. The two terminals are interchangeable: the gap is symmetric about its centre, so neither side is the input.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| W | 2.9 | mm | shown | Width of the line on each side of the gap. Both lines are this width. |
| S | 1.5 | mm | shown | The gap: edge to edge, from one line's end to the other's. Must be greater than zero. Smaller is more coupling across it; the closed form covers S/W from 0.1 to 1. |
| SignalLayer | — | — | — | The conductor the two lines are on. Empty: the technology's top conductor. |
| GroundReference | — | — | — | The plane under the lines. Empty: the nearest ground-designated conductor below the signal layer. |
Microstrip T-Junction (MTEE)
A three-port microstrip T-junction. W1, W2 and W3 are the widths of the three arms, and L1,
L2 and L3 their lengths from the junction's centre to each pin — the shape the layout draws.
The arms are simulated as microstrip lines, with the junction model between them. A through arm carries
L1 − W3/2 (or L2 − W3/2) of line, the branch L3 − max(W1, W2)/2: the junction model starts where
the crossing arm's edge is. When the branch reaches no further than the through line's edge, the tee is
a straight line with pin 3 on it, and it simulates as exactly that — two lines of L1 and L2 meeting
at pin 3 — so with pin 3 open it gives the same answer as an MLIN of L1 + L2. Any longer branch
brings the junction model in.
A tee with no L values (from a file saved before they existed) simulates the junction alone, and the
run says its arms are not simulated.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
| 3 | 3 |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| W1 | 2.9 | mm | shown |
| W2 | 2.9 | mm | shown |
| W3 | 2.9 | mm | shown |
| L1 | 2.9 | mm | shown |
| L2 | 2.9 | mm | shown |
| L3 | 2.9 | mm | shown |
| SignalLayer | — | — | — |
| GroundReference | — | — | — |
Microstrip Cross-Junction (MCROSS)
A four-port microstrip cross-junction, with a width (W1–W4) and a length from the centre
(L1–L4) per arm.
The arms are simulated as microstrip lines with the junction model between them, as for the
MTEE: arms 1 and 3 carry L − max(W2, W4)/2 of line, arms 2 and 4 L − max(W1, W3)/2. When
arms 2 and 4 both stop at the edge of arms 1 and 3, the cross is a straight line — the lines of L1 and
L3 with pins 2 and 4 on it — and with those pins open it equals an MLIN of L1 + L3. The same holds
the other way round. A cross with no L values simulates the junction alone, and says so.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
| 3 | 3 |
| 4 | 4 |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| W1 | 2.9 | mm | shown |
| W2 | 2.9 | mm | shown |
| W3 | 2.9 | mm | shown |
| W4 | 2.9 | mm | shown |
| L1 | 2.9 | mm | shown |
| L2 | 2.9 | mm | shown |
| L3 | 2.9 | mm | shown |
| L4 | 2.9 | mm | shown |
| SignalLayer | — | — | — |
| GroundReference | — | — | — |
Linear Microstrip Taper (MTAPER)
A linearly tapered microstrip line running from width W1 to width W2 over length L.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. Not interchangeable: terminal 1 is the W1 end and terminal 2 the W2 end.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| W1 | 2.9 | mm | shown |
| W2 | 1.0 | mm | shown |
| L | 10 | mm | shown |
| SignalLayer | — | — | — |
| GroundReference | — | — | — |
Klopfenstein Taper (MKLOPF)
A Klopfenstein-taper microstrip line — the taper profile that gives the shortest line for a stated
in-band ripple. Specify the two impedances (or the two widths), the maximum reflection GammaMax, and
either a length or a 3 dB corner frequency.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. Not interchangeable: terminal 1 is the Z1 end and terminal 2 the Z2 end.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| Z1 | 50 | Ω | shown |
| Z2 | 100 | Ω | shown |
| GammaMax | 0.05 | — | shown |
| L | 20 | mm | shown |
| Offset | 0 | mm | shown |
| SmoothSteps | 1 | — | shown |
| SignalLayer | — | — | — |
| GroundReference | — | — | — |
Via (VIA)
A plated via changing layers: terminal A lands on FromLayer, B on ToLayer. Its inductance,
resistance and capacitance are computed from the technology's stackup — the barrel length, the drill it
belongs to, the ground planes it passes and any stub where the drill runs on — so none of them is typed.
Every row may be left empty to follow the technology; the parameter dialog shows the L, R and C that
result. The formulas, where they hold and how they compare with a 3D solve are in
Vias.
| Net | Terminal |
|---|---|
| 1 | A |
| 2 | B |
The nets of an instance line, in this order. Terminal A lands on FromLayer and terminal B on ToLayer. Swapping them swaps which layer each end is on, and which end a stub hangs from when the drill runs past a layer.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| FromLayer | — | — | — | The conductor terminal A lands on. Default: the top conductor, or the highest one a drill to the other end starts on when none joins the top conductor to it. |
| ToLayer | — | — | — | The conductor terminal B lands on. Default: the farthest conductor a drill reaches from FromLayer that is not a ground plane. A drill that runs on past it leaves a stub, which is modelled. |
| Drill | — | mm | shown | The finished hole diameter. Empty: the technology's via drill, else 0.3 mm. |
| Pad | — | mm | — | The pad diameter on each end. Empty: the technology's via pad, else 0.6 mm. |
| Antipad | — | mm | — | The clearance diameter in every ground plane the barrel passes. Empty: the pad plus 0.3 mm. |
| Plating | — | µm | — | The barrel wall thickness. Empty: the via layer's own, else 25 µm. Ignored for a filled via. |
| IncludeC | true | — | — | Whether the pad-to-plane capacitance is modelled. With it off the via is its barrel's resistance and inductance only. |
| C | — | pF | — | Replaces the computed capacitance outright. Empty: computed from the pad, the antipad and the dielectric, which is an estimate (see the component's help). |
Via to Ground (VIAGND)
A via from a pad down to a ground plane — the return of a shunt part, with the pad's capacitance across
it. One pin, on FromLayer; the far end is GroundLayer. See Vias for what it
replaces.
One terminal, A — an instance line writes a single net. One terminal, A, on FromLayer. The far end is ground: the via lands on GroundLayer.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| FromLayer | — | — | — | The conductor terminal A lands on. Default: the top conductor, or the highest one a drill to the other end starts on when none joins the top conductor to it. |
| GroundLayer | — | — | — | The ground plane the via lands on. Default: the nearest ground-designated conductor beneath FromLayer. |
| Drill | — | mm | shown | The finished hole diameter. Empty: the technology's via drill, else 0.3 mm. |
| Pad | — | mm | — | The pad diameter on each end. Empty: the technology's via pad, else 0.6 mm. |
| Antipad | — | mm | — | The clearance diameter in every ground plane the barrel passes. Empty: the pad plus 0.3 mm. |
| Plating | — | µm | — | The barrel wall thickness. Empty: the via layer's own, else 25 µm. Ignored for a filled via. |
| IncludeC | true | — | — | Whether the pad-to-plane capacitance is modelled. With it off the via is its barrel's resistance and inductance only. |
| C | — | pF | — | Replaces the computed capacitance outright. Empty: computed from the pad, the antipad and the dielectric, which is an estimate (see the component's help). |
Test Point Pad (TESTPAD)
A round test-point pad on an RF line: a pad of diameter D on PadLayer — by default the lowest signal
conductor, the board's far side — fed either through a via at its centre from ViaFrom (Feed = Via) or
by a short stub leaving it on one side (N, E, S or W, FeedW wide). Terminal 1 is the feed — the
via on ViaFrom, or the stub's end — and terminal 2 is the pad centre. Leave terminal 2 open for a test
point that is not in use, or continue it to a connector.
The pad loads the line with its capacitance to the nearest plane and the via's inductance, and the two
resonate. The model is an estimate: the pad's capacitance to the nearest plane on each side, as a disc over a
plane, with the dielectrics between combined in series; the via's inductance over its length, with the barrel's
capacitance to each plane it passes. Every inner conductor counts as a plane under the pad unless ClearLayers
names it. Messages gives the values and the resonance once per run. Rows that do not apply to the chosen Feed
are greyed out in the parameter dialog: FeedW through a via, and ViaFrom, Drill, InnerPadD and
AntipadD for a side-fed pad.
Unused pads on the via. Board CAD usually keeps a pad on every conductor a via passes, joined to nothing,
and each adds capacitance across its antipad. Set InnerPadD to their diameter and the model counts them
(and the layout draws them) on every conductor between ViaFrom and PadLayer that ClearLayers does not
name; AntipadD is the clearance round the via in each plane (empty: the technology's). Messages gives their
share separately. Removing unused pads at manufacture removes it.
Cut-outs. ClearLayers names the conductors whose plane gets a round cut-out ClearD across under the
pad; the parameter dialog lists the technology's conductors to tick. Where the nearest plane is cut, the pad faces
it over the ring outside the hole and the next plane through the hole, so its capacitance falls as ClearD
grows and settles once the hole is a little wider than the pad. ClearD = 0, or one no wider than the via's
AntipadD, cuts nothing: those planes are modelled as ordinary planes, and Messages says so. In a plane the via
passes, its barrel sees the larger of ClearD and AntipadD. Cut-outs are not drawn as shapes: a ground pour drawn by Update Layout or Draw Ground Pour cuts them, as it
cuts a via's antipad. On a board whose planes are drawn artwork, right-click the placed pad and choose
Cut Clearances into Planes.
An EM port at the centre. With Centre = Port the layout carries an EM port at the pad's centre, an
internal port to ground numbered PortNum (empty: the next free number). An EM setup of the board picks it
up from inside the placed part — in 3D as a sheet from the pad to the nearest plane with metal there, through
any cut-out — so the pad can be solved with and without each cut-out before a board is built. See
Ports a component carries.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. Not interchangeable: terminal 1 is the feed — the via on ViaFrom, or the end of the side stub — and terminal 2 is the pad centre. Leave 2 open for a test point that is not in use, or continue it to a connector.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| PadLayer | — | — | — | The conductor the pad is on. Default: the lowest conductor that is not a ground plane. |
| D | 1.5 | mm | shown | The pad's diameter. The test fixture usually sets it. |
| Feed | Via | — | shown | Where terminal 1 joins: Via — through a via at the pad's centre from ViaFrom — or N, E, S or W, a short stub leaving the pad on that side. |
| FeedW | — | mm | — | The side stub's width. Empty: the 50 Ω microstrip width on PadLayer. Not used through a via. |
| ViaFrom | — | — | — | The layer the trace arrives on: the via starts here, where terminal 1 is, and runs to PadLayer. Default: the top conductor. Not used for a side-fed pad. |
| Drill | — | mm | — | The via's drill. Empty: the technology's via drill. |
| InnerPadD | — | mm | — | The unused pads the via keeps on each conductor it passes (not those in ClearLayers). Empty: none. Board CAD keeps them unless told to remove them, and each adds capacitance. |
| AntipadD | — | mm | — | The clearance round the via in each plane it passes. Empty: the technology's via pad + 0.3 mm. |
| ClearLayers | — | — | shown | The conductors whose plane gets a round cut-out under the pad. Empty: none. Through the cut-out the pad faces the next conductor not named here. |
| ClearD | — | mm | — | The cut-out's diameter on those conductors. Empty: D + 0.5 mm. 0, or no wider than AntipadD, cuts nothing: those planes stay planes. |
| Centre | Open | — | shown | Open: the pad is metal and nothing more (a test point not in use). Port: the layout also carries an EM port at the pad's centre, an internal port to ground. |
| PortNum | — | — | — | The EM port's number when Centre is Port. Empty: the next free number. |
GSG Probe Pad (GSGPAD)
A ground-signal-ground probe pad and the microstrip line leaving it, for an RF probe landing on a die or a
board. The signal pad sits between two ground pads at Pitch — centre to centre, the probe's own pitch — each
ground pad holding NVia vias to the plane in a row along it, and a line W wide and L long leaves the
signal pad. Terminal 1 is where the probe's signal tip lands, the middle of the signal pad; terminal 2 is the
line's far end. Put the measurement port on terminal 1. In the layout the probe approaches from the side away
from the line.
The model is MLIN: half the signal pad, PadW wide and PadL/2 long, then the line, cascaded. The ground pads
are ideal ground at the probe's tip, which is where a calibrated probe puts its reference; their vias are drawn
but are not part of the circuit. It is a microstrip, never a coplanar line: the ground pads stop at the signal
pad and do not run along the line. The vias are a Via to Ground's, landing on the plane under the
line — on a die, backside vias — with the technology's drill and pad; a ground pad grows longer when its row
of vias needs the room. NVia = 0 draws no vias, for ground pads grounded some other way.
W is set to the 50 Ω width when the part is placed on a technology. Pitch, PadW and PadL are in µm and
are the probe's, so no technology changes them.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. Not interchangeable: terminal 1 is where the probe's signal tip lands, the middle of the signal pad, and terminal 2 the far end of the line. Put the measurement port on terminal 1.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| W | 2.9 | mm | shown | Width of the line leaving the signal pad. Placed: the 50 Ω width on the technology. |
| L | 100 | µm | shown | Length of the line, from the signal pad's edge to terminal 2. |
| Pitch | 150 | µm | shown | Probe pitch: centre of the signal pad to the centre of each ground pad. The probe's, e.g. 100, 125 or 150 µm. |
| PadW | 80 | µm | shown | Width of each pad, across the line. |
| PadL | 80 | µm | shown | Length of the signal pad along the line. A ground pad grows longer when its vias need the room. |
| NVia | 1 | — | shown | Ground vias in each ground pad, in a row along it. 0 leaves the ground pads to be grounded some other way. |
| SignalLayer | — | — | — | The conductor the pads and the line are on. Empty: the technology's top conductor. |
| GroundReference | — | — | — | The plane under the line, which the ground vias land on. Empty: the nearest ground-designated conductor below the signal layer. |
Wirebond (wBond)
A wirebond design placed as a single component. Its symbol is generated from the design it carries
— two pins per wire array plus a REF pin — so both the pin count and the pin names are properties of
that design rather than of the component type. The wires themselves are drawn in the layout view,
not here.
The geometry, loop height and span, the inductance and capacitance models, the 3D kernel, DXF
interchange and Touchstone export are in wBond. The two parameters
most often left wrong — IncludeCapacitance and er — are explained there.
Terminals are set by Arrays; this component has no fixed pin geometry of its own.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| Arrays | G1 | — | — | — |
| File | — | — | — | — |
| WarnUnsynced | true | — | — | — |
| SymbolPitch | Loose | — | — | — |
| RefPin | false | — | — | — |
| IncludeCapacitance | true | — | — | — |
| er | 1 | — | — | — |
| Temp | 125 | — | — | Checked: the wires are held at this temperature, in °C, in every analysis, and a DC, harmonic-balance or loadpull run reports it as WireTemp. Empty: the temperature stored with the wires — 125 °C unless changed. Unchecked: the wires' temperature is SOLVED from each DC and large-signal run's currents, between TempStart and TempEnd, and reported as WireTemp; the impedance is then evaluated at the hotter of those two ends, in every analysis. Each metal's conductivity is read from its conductivity-against-temperature table; a temperature outside the table is held at the table's nearest end, and the run says so in the Messages panel. |
| FixedTemp | false | — | — | — |
| TempStart | 125 | — | — | With Temp unchecked: the temperature, in °C, each array's wires are held at where they start, at the array's input pin — typically the die. Default 125 °C. |
| TempEnd | 85 | — | — | With Temp unchecked: the temperature, in °C, each array's wires are held at where they end, at the array's output pin — typically the package lead. Default 85 °C. |
| GroundPlane | — | — | — | — |
| LoopHeight | — | mil | — | — |
| Diameter | — | mil | — | — |
| Material | — | — | — | — |
MMIC passives
The parts a die is drawn from. Like a microstrip line, each one takes its process from the workspace technology — you state only the geometry, and the stackup supplies the film's permittivity and thickness, the metals, the sheet resistance, the air-bridge height and the substrate. Each has a built-in layout cell of the same name, so a schematic of them generates a layout the way a board's microstrip does, with every terminal on the metal that lies on the substrate.
On a technology that lacks what a part needs — a board has no MIM film, for instance — the run says which piece is missing and uses the shipped GaAs process's numbers instead.
The properties panels show what the geometry comes out to, as a value you read rather than type: a TFR's resistance, a MIMCAP's capacitance and a spiral's inductance, each computed by the same model a run uses, on the technology's process. It follows every edit as you type. In a layout's Inspector and Component Properties it is the greyed row after the geometry. A schematic's Parameters panel also shows a spiral's series resistance, at DC and at 10 GHz, where the skin effect has raised it.
MIM Capacitor (MIMCAP)
A metal-insulator-metal capacitor. W × L is the top plate; the capacitance is the film's
ε·W·L/t with the plates' edge fringing, the series resistance comes from both plates' metal, the loss
from the film's loss tangent, and the bottom plate's capacitance through the substrate to ground is
included. Terminal 1 is the top plate and terminal 2 the bottom plate: for a shunt capacitor, ground
terminal 2, which shorts that substrate capacitance out.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. Not interchangeable: terminal 1 is the top plate and terminal 2 the bottom plate, the one lying on the substrate, which carries the plate's capacitance to ground. For a shunt capacitor ground terminal 2.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| W | 50 | µm | shown | Top-plate width, across the feed. C is the film's ε·W·L/t with Palmer's edge fringing, valid while W and L are each at least ten film thicknesses. |
| L | 50 | µm | shown | Top-plate length, along the feed. The plates' series resistance grows with L/W. |
Spiral Inductor (SPIRAL)
A square spiral of N turns, W wide with S between turns and a clear opening Din across the
middle. Terminal 1 is the outer end; terminal 2 is the inner end, brought out over the turns on the
air-bridge metal.
It is summed over the coil exactly as the layout draws it — every side, the escape over the turns and the landing pad — together with the coil's mirror image in the ground plane under the substrate. Each conductor is treated as a line along its centre, so current crowding toward the edges and the skin effect are not in the inductance. On the shipped GaAs process the default coil reads 1.50 nH against 1.72 nH from a coarse EM extraction of the drawn part. About half of that difference is the extraction treating the metal as a sheet with no thickness. For a value to rely on, extract the drawn coil and use the result in its place:
circuitrf em <workspace> --component "SPIRAL N=2.5 W=10 um S=10 um Din=100 um" --freq 1GHz:20GHz:1GHz -o L1.s2p
Port 1 of the file is terminal 1, so it drops into the schematic as an SnP in the part's place.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. Not interchangeable in the drawn part: terminal 1 is the outer end and terminal 2 the inner end, brought out over the turns on the bridge metal. The model itself is symmetric.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| N | 2.5 | — | shown | Turns. The layout draws whole quarter turns, and the inductance is summed over exactly the coil it draws — an estimate. |
| W | 10 | µm | shown | Trace width. |
| S | 10 | µm | — | Spacing between turns. |
| Din | 100 | µm | — | Inner clear opening across the first pair of sides. |
Octagonal Spiral Inductor (OSPIRAL)
The square spiral with its corners cut: the same N, W, S and Din, meaning the same things,
with Din measured across the innermost pair of parallel flats. Every side is a constant S from
the turn beside it, diagonals included. For the same footprint the winding is shorter than a square
one's, which costs some inductance and saves more resistance. Its corners are 45° rather than 90°,
which spreads the current that crowds into a square spiral's corners. N counts from the inner end,
at the middle of the innermost flat, and the layout draws whole eighth turns.
The inductance is the same estimate as the square spiral's, summed over the octagonal coil as drawn.
Extract the drawn coil for a value to rely on:
circuitrf em <workspace> --component "OSPIRAL N=2.5 W=10 um S=10 um Din=100 um" -o L1.s2p.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. Not interchangeable in the drawn part: terminal 1 is the outer end and terminal 2 the inner end, brought out over the turns on the bridge metal. The model itself is symmetric.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| N | 2.5 | — | shown | Turns, from the inner end at the middle of the innermost flat. The layout draws whole eighth turns, and the inductance is summed over exactly the coil it draws — an estimate. |
| W | 10 | µm | shown | Trace width. |
| S | 10 | µm | — | Spacing between turns. |
| Din | 100 | µm | — | Inner clear opening across the innermost pair of parallel flats. |
Thin-Film Resistor (TFR)
The technology's resistor film as a serpentine: N parallel segments of width W and length L, joined by orthogonal links
whose clear length between the segments is Lc. An N of 1 is a straight film with its contacts L apart. An odd N leaves the
two ends on opposite sides, and an even N on the same side.
Its resistance is the film's sheet resistance times its squares: the straight film between the bends, plus 0.559 of a square for each corner. The contacts are not included.
Film chooses among the technology's resistive films, and it decides both the sheet resistance and the contact.
Each row of the combobox says what it gives. On a level with metal the part draws contacts lapping the film's ends, and L runs
between their edges. On a film level it draws a head on the metal at the contact via's far end with a via
inside it, and L runs between the vias' inner edges. Left at its default it is the first film in the stackup. A name that matches no
film is a refusal listing the real ones, in the dialog, in check and in a run.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. Interchangeable: the two ends of the film.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| N | 3 | — | shown | Segments: the parallel runs of the serpentine. 1 is a straight film. An odd N leaves the two ends on opposite sides, an even N on the same side. |
| W | 10 | µm | shown | Film width. R is the film's sheet resistance times its squares; the contacts and the metal overlap at each end are not included. |
| L | 40 | µm | shown | Length of one segment, between bend centres, or between the contacts' edges for one segment. |
| Lc | 10 | µm | — | Length of the orthogonal link joining two segments: the clear gap between their edges. Not used when N is 1. |
| Film | — | — | — | The resistive film, which sets the sheet resistance and how the part is contacted: through vias on a level of its own, or by the metal's overlap on a level with metal. Default: the first film in the stackup. |
Air Bridge (AIRBRIDGE)
A span of the air-bridge metal crossing another line: L is the clear span between its two posts,
W its width and Wu the width of the line it crosses. Terminals 1 and 2 are the landings; terminals
3 and 4 are the two ends of the crossed line's segment under the bridge, which is two bridge widths
long. The two are coupled through the overlap capacitance. Tie terminals 3 and 4 to ground for a
bridge over a ground strap.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
| 3 | 3 |
| 4 | 4 |
The nets of an instance line, in this order. Terminals 1 and 2 are the bridge's two landings, and 3 and 4 the two ends of the line it crosses; each pair is interchangeable. Tie 3 and 4 to ground for a bridge over a ground strap.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| L | 30 | µm | shown | Span: the bridge's length between its two landings. |
| W | 10 | µm | — | Bridge width. |
| Wu | 10 | µm | — | Width of the line crossed. The crossing capacitance is the overlap W·Wu over the bridge's height, without fringing. |
Data-file components
EM Field Data
A finished EM run as a block: one parameter, File, a result record (.cemr). Its pins are named after the run's ports, in the
run's order, and it stamps the record's Touchstone exactly as an SnP does, so its S is the file's. It holds a far field or a field set or it
is refused, and it is the block a Fields analysis names. A result with neither belongs in an SnP.
EmFieldData:EM1 feed cl cr ct File="results/Loop Coil CoSim.openems.cemr"
Touchstone N-Port (SnP)
An N-port backed by a Touchstone (.sNp) file — measured or modelled S-parameters embedded in the
circuit and interpolated onto the analysis sweep.
NumPorts— the port count. Hidden; it drives the symbol and the pin count.File— the path to the Touchstone file. Once a file is chosen and is there, Preview opens it in the S-Parameter Viewer.RefNode— when true, expose a floating common reference pin (N+1 nets) instead of grounding each port.PinConfigandPitch— the pin arrangement and spacing on the symbol.InterpMode,InterpDomainandExtrapMode— how the data is interpolated between points, in which domain, and what happens beyond its frequency range.SdB_<i>_<j>andSdeg_<i>_<j>— an offset on one S-parameter:SdB_3_1=0.2 dBraises |S31| by 0.2 dB,Sdeg_3_1=5turns it by 5°, the same at every frequency. Ports are numbered from 1 and always separated by_(SdB_10_1). Both are 0 unless set, which is what lets a sensitivity run rank an S-parameter and a Monte Carlo give it a tolerance. Because an offset is the same at every frequency it is not tuned or optimized. At 0 Hz only the dB offset applies.Reciprocal—auto(the default),tiedoruntied. Tied, one offset on S31 moves S13 with it, and only the lower entries (SdB_3_1, neverSdB_1_3) are offered; untied, every entry has its own.autoties a file whose S(i,j) and S(j,i) agree (every passive file does) and unties one that does not (an amplifier).
Noise. In an S-parameter run with Noise=yes, a two-port file's Touchstone noise
block makes the block noisy by that data. The data is linear between rows, and the end rows are held outside them, with
a warning. A passive file with no noise block is thermal at the block's own Temp (°C), or Dtemp above the ambient,
or else the design's ambient. A file with gain and no noise block is taken as noiseless and named in the run's warning,
and so is every Deembed. Noise=no makes the block noiseless whatever its file says
(Switching a part's noise off).
When the file's header names its ports (! Port[1] = P1, which every EM result circuitRF writes carries), each lead
shows its port's name in place of its number, shortened past eight characters. The pins are still ports 1…N: only the
text beside them changes.
The symbol is dynamic; the pin arrangement, the pitch and the floating-reference option are covered in Dynamic symbols.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. How many there are is set by NumPorts; the table shows NumPorts = 2.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| NumPorts | 2 | — | — |
| File | — | — | shown |
| RefNode | false | — | — |
| PinConfig | Standard | — | — |
| Pitch | Loose | — | — |
| InterpMode | CubicSpline | — | — |
| InterpDomain | MA | — | — |
| ExtrapMode | NearestEdge | — | — |
Deembed
The opposite of an SnP. It reads a Touchstone file the same way and has the same parameters, but instead of adding the file's network to the circuit it removes it: it is the network that, cascaded with the file's, gives a plain connection.
Wire it as you would wire the SnP that adds the network. Ports 1…N/2 are one side, N/2+1…N the other, as in the file. Draw the chain that would put the fixture in, then swap the SnP for a Deembed and the part for the measurement:
Port:P1 p1 0 Num=1 Z=50 Ohm
SnP:A p1 x File="fixture_A.s2p" NumPorts=2 ; adds fixture A: what an instrument sees
SnP:DUT x p2 File="part.s2p" NumPorts=2
Port:P1 p1 0 Num=1 Z=50 Ohm
Deembed:DA p1 x File="fixture_A.s2p" NumPorts=2 ; removes it again
SnP:M x y File="measured.s2p" NumPorts=2
Deembed:DB y p2 File="fixture_B.s2p" NumPorts=2 ; and fixture B on the other side
- Fixture files from your measurements. A TRL Calibration turns measured Thru, Reflect and Line standards into the two fixture files a pair of Deembeds takes off.
- Any even number of ports. A six-port that sits between a transistor's outer and inner gate, drain and source terminals de-embeds the transistor to its inner terminals. An odd count is refused when the netlist is read.
- An SnP and a Deembed on the same file cancel, at every frequency of the sweep, not only the file's own points,
because both read it through the same interpolation with the same
InterpMode,InterpDomainandExtrapMode. Below and above the file's band both hold its end values, or both extrapolate, so they still cancel. - It works in every analysis an SnP works in: DC (at 0 Hz), S-parameters, harmonic balance at every harmonic, loadpull, sweeps, tuning and optimization. In an envelope run it is not fitted as an SnP is: it undoes a network, so it would have to advance what that network delays, which no causal model can. It is approximated around each harmonic instead, and the run says so.
- It has gain. The network that undoes a lossy one has gain wherever that one has loss, so a stability run with
NDF=yesrefuses it by name. - Where it cannot be built, the run stops and says where. A fixture that does not pass from one side to the other at some frequency has nothing to undo there: a series capacitor at 0 Hz is the usual case, and the message names the instance and the frequency. Apply bias outside the part being de-embedded, or use a file whose lowest frequency still passes through.
- A path through the network needs a net at each end. Pins k and N/2+k are the two ends of one path. Put both on ground and the current leaving one is no longer the current entering the other, so that path is not removed: for a FET's six-port, the outer source (pin 3) goes to ground and the inner source (pin 6) to the device's source, on a net of its own. A run with both ends of a path on ground warns, naming the pins.
- It takes no
SdB_<i>_<j>,Sdeg_<i>_<j>orReciprocal; set an offset on the SnP whose network it removes.
In the schematic it is in the palette under Data Files, and it is placed, pointed at a file and laid out exactly as an SnP is: Browse… sets the port count from the file, and a file with an odd number of ports is refused with a message. Its pins default to SplitLR, ports 1…N/2 down the left and the rest down the right in order, so each port faces its partner on the other side. It is always drawn as its own box, marked S⁻¹.
The TRL and De-embedding example (File ▸ New ▸ Examples) uses it three ways: two fixtures off a filter, and a 6-port off a GaN FET to show its intrinsic Cgs, Cgd, gm and Rds flat with frequency.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. How many there are is set by NumPorts; the table shows NumPorts = 2. Not interchangeable: terminals 1 to N/2 are one side of the network its file holds and N/2+1 to N the other, in the file's order. Wire it exactly as an SnP on the same file would be wired to ADD that network, then swap the SnP for the Deembed and the part for its measurement: a fixture's instrument side faces the port and its part side faces the measured block. An SnP and a Deembed on one file, joined side to side in either order, are a through connection.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| NumPorts | 2 | — | — | The file's port count, read from it: even, half on each side of the network. |
| File | — | — | shown | The Touchstone file holding the network to remove: the fixture an SnP on the same file would add. It needs an even number of ports. A TRL analysis's fixtureA and fixtureB paths go here unchanged. |
| RefNode | false | — | — | — |
| PinConfig | SplitLR | — | — | — |
| Pitch | Loose | — | — | — |
| InterpMode | CubicSpline | — | — | As on an SnP. The block inverts the S an SnP on the same file would stamp with these settings, so the two cancel between the file's points and outside its band too. |
| InterpDomain | MA | — | — | As on an SnP. The block inverts the S an SnP on the same file would stamp with these settings, so the two cancel between the file's points and outside its band too. |
| ExtrapMode | NearestEdge | — | — | As on an SnP. The block inverts the S an SnP on the same file would stamp with these settings, so the two cancel between the file's points and outside its band too. |
SPICE Model or Subcircuit
A SPICE .model card or .subckt definition placed as a component and run from its own file.
Nothing is copied: edit the file and the schematic follows it.
File— the path to the SPICE file.Name— which definition in that file to run. A vendor file usually holds a part and every piece the part is built from, each of them a definition in its own right; leavingNameblank picks the highest-level one, the one nothing else in the file calls.PinConfigandPitch— the pin arrangement and spacing, for a.subcktonly. A.modelcard draws as the device itself, whose terminals are where that device's terminals are.Glyph— set on a part placed from a vendor part library:CorLfor a two-terminal capacitor or inductor, which then draws as the ordinary capacitor or inductor symbol. It is stored on the instance, so the part still draws as what it is when its library is missing, marked Not Found.
Any parameter the chosen .subckt declares appears as an ordinary editable row below the panel,
seeded at the definition's own default.
The symbol is dynamic and is generated from the file. A .model card circuitRF has a device for
draws as that device — a diode card draws as a diode — so the schematic says which lead is
which without anything being opened. A .subckt draws as a box carrying the definition's own port
names. Until a file is chosen it draws as a generic two-port, which can be placed and wired first.
A model type circuitRF has no equivalent for is refused by name, in the parameter dialog at the moment the file is chosen and again at Run. Nothing is approximated: the nearest native device would simulate and be quantitatively wrong.
This is the reference; the import is the copy. The project tree's Copy to Workspace as
Cell… reads the same file and builds an editable cell out of it — a schematic you can open,
re-symbol and change. Use that when the model is a starting point. Use this component when the file
is the authority and must stay so. Because there is no .csch behind it, a SpiceModel
has no pop-in: there is nothing to push into.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| File | — | — | shown |
| Name | — | — | shown |
| Section | — | — | — |
| PinConfig | Standard | — | — |
| Pitch | Loose | — | — |
Impedance N-Port (Z)
An N-port defined by its impedance matrix Z[p,q]. NumPorts is the port count, hidden, and it
drives the symbol and pin count. The symbol grows with the port count — see
Dynamic symbols.
| Net | Terminal |
|---|---|
| 1 | 1+ |
| 2 | 1- |
| 3 | 2+ |
| 4 | 2- |
The nets of an instance line, in this order. How many there are is set by NumPorts; the table shows NumPorts = 2.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| NumPorts | 2 | — | — |
| Z[1,1] | 50 | Ω | shown |
| Z[1,2] | 50 | Ω | shown |
| Z[2,1] | 50 | Ω | shown |
| Z[2,2] | 50 | Ω | shown |
Nonlinear devices
Symbolically-Defined Device (SDD)
A user-defined nonlinear device: you write each port current — and, optionally, each port charge — as an equation in the port voltages, and circuitRF differentiates it automatically for the solver. This is how the GaN FET model in the netlist example is defined. The symbol is dynamic; see Dynamic symbols.
I[x,0]— the port-x current equation, seeded as a 50 Ω conductance. Weight 0 is the current itself.Q[x],I[x,w],H[w]— optional charge equations, higher weightings, and weighting functions.C[n]/Cport[n]— bind a control current_cnto another device's current.
| Net | Terminal |
|---|---|
| 1 | 1+ |
| 2 | 1- |
| 3 | 2+ |
| 4 | 2- |
The nets of an instance line, in this order. How many there are is set by NumPorts; the table shows NumPorts = 2.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| NumPorts | 2 | — | — |
| I[1,0] | _v1/50 | — | shown |
| I[2,0] | _v2/50 | — | shown |
The SDD is deep — the equation grammar (I[p,w], Q[p]), weighting functions
H[w], and how to reference another device's current (_cn /
C[n]) are all covered in The SDD.
Junction Diode (Diode)
A junction diode: anode at the top, cathode at the bottom. Rs is a model parameter, not a
separate placed resistor — when it is non-zero the elaborator mints the internal node itself, so the
schematic shows one device either way.
| Net | Terminal |
|---|---|
| 1 | a |
| 2 | c |
The nets of an instance line, in this order. a is the anode and c the cathode; forward current flows a to c.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| Is | 1e-14 | A | shown | — |
| N | 1 | — | shown | — |
| Isr | 0 | A | — | — |
| Nr | 2 | — | — | — |
| Rs | 0 | Ω | shown | — |
| Cj0 | 0 | pF | shown | — |
| Vj | 1 | V | — | — |
| M | 0.5 | — | — | — |
| Fc | 0.5 | — | — | — |
| Bv | 0 | V | — | — |
| Ibv | 1e-3 | A | — | — |
| Nbv | 1 | — | — | — |
| Tt | 0 | — | — | — |
| Area | 1 | — | — | — |
| Xti | 3 | — | — | — |
| Eg | 1.16 | V | — | — |
| Temp | 26.85 | — | — | — |
| Tnom | 26.85 | — | — | — |
| Kf | 0 | — | — | Flicker noise coefficient: a 1/f noise current Kf*|I|^Af/f on the junction current. 0 is off. |
| Af | 1 | — | — | Flicker noise exponent on the current. 1 is the usual value. |
High-level injection (a card's IKF) — at high forward bias the
current of a real diode rolls off from the ideal exponential towards a square root of it, and this
model has no term for that knee, so it stays exponential and is optimistic there. An extracted
Rs often absorbs some of that roll-off, which is a fit rather than the physics and does
not follow temperature the way the real mechanism does.
Self-heating — the device temperature is a parameter, not a solved node.
Sidewall junction capacitance as a separate term — Cj0, Vj
and M describe one junction. A parameter this model does not read is not offered in the
palette; a card stating one has it named on import.
Noise. Shot noise 2q·|Id| across the junction, always on, since it is what a junction carrying current does;
flicker noise Kf·|Id|^Af/f on the same junction when Kf is above zero; and thermal noise 4kT/Rs across the series
resistance when there is one. The S-parameter noise analysis evaluates them at the DC
operating point and the device's own temperature.
The FET family
Five native large-signal FET models, one per published drain-current law. They are five separate
components rather than one component with a model selector, because they are not variants of one
another: each has its own parameter set, and several reuse a spelling for a different quantity — the
quadratic law's Beta is a transconductance parameter, while the cubic law's is a gate-voltage shift
with drain bias. One kind with a selector would present the union of all five parameter sets and
silently accept the wrong ones.
All five share one glyph and one three-pin geometry — gate left, drain top, source bottom. The topology genuinely is the same, and the type label below the symbol names the law. The glyph is the JFET's: a MESFET's or HEMT's Schottky gate is a junction made directly on the channel, not an insulated gate, so the gate arrow lands on one unbroken (depletion) channel bar — into it for n-channel, out of it for p-channel. The source is an ordinary pin: these are not hard-wired common-source.
What all five share
Terminals and ports. Three nets — gate drain source — mapped onto two ports: port 0 is
(gate, source) and port 1 is (drain, source). So the first port voltage is Vgs and the second is
Vds, which is the form every published FET equation is written in. Nothing has to be transposed to
use a datasheet parameter set.
What is modelled. The drain current and both of its derivatives — gm = ∂Id/∂Vgs and
gds = ∂Id/∂Vds — computed analytically rather than by finite differences, which matters inside a
Newton loop precisely where the device is most nonlinear. On top of that: optional forward gate
conduction, as an ordinary diode from gate to source (set by Is and N, off when Is is zero), and
gate charge (below). Parameter temperature scaling is modelled through Temp and Tnom.
The Statz/TOM-family charge formulation — it works on a smoothed effective voltage rather than on Vgs and Vgd separately, so it is a different scheme and not a parameter change to the two below. Transit-time delay. Breakdown. Self-heating — the device temperature is a parameter, not a solved node, so there is no electrothermal feedback. If your application depends on any of these, use a compiled model through VerilogA instead.
Cgs, Cgd and CapModel
Gate charge is selectable, because the published models disagree about it. It is a parameter rather than a per-model decision for exactly that reason: two authors implementing "the Curtice model" from the literature will not necessarily give it the same gate charge.
CapModel |
Gate charge | Are Cgs/Cgd linear? |
|---|---|---|
0 |
None at all | n/a — no charge storage |
1 (default) |
Constant Cgs/Cgd |
Yes — linear. They are fixed capacitances, independent of bias |
2 |
Junction (depletion) charge, applied to Vgs and Vgd separately | No — bias-dependent. Cgs/Cgd are then the zero-bias values, Cj0 |
At CapModel = 2 the charge on each junction is the standard depletion form:
Q = Cj0·Vbi/(1 − M) · [ 1 − (1 − V/Vbi)^(1 − M) ] for V < Fc·Vbi
continued by its TANGENT above Fc·Vbi
parameters: Cgs, Cgd zero-bias capacitances (Cj0 for the two junctions)
Vbi junction potential
M grading coefficient
Fc forward-bias changeover, as a fraction of Vbi
The tangent continuation above Fc·Vbi is not cosmetic: a hard clamp there would leave a kink in the
Jacobian and stall Newton.
Which to pick. Use 1 when your parameter set was extracted with fixed capacitances — which is the
common case for the older laws — and when you want the cheapest evaluation. Use 2 when the extraction
gives you junction parameters (Cj0, Vbi, M) and the gate swing is large enough for the bias dependence
to matter, which in a power amplifier driven into compression it usually is.
The gate–drain capacitance is across Vgd = Vgs − Vds, so it contributes to both ports and to
the Jacobian's off-diagonal terms. That is why a change in drain bias moves the gate-side loading, and it
is why Cgd dominates the input match of a device long before Cgs does.
Curtice quadratic (FET_Curtice)
The Curtice quadratic law: Vto, Beta, Alpha and Lambda.
| Net | Terminal |
|---|---|
| 1 | g |
| 2 | d |
| 3 | s |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| Vto | -2 | V | shown | — |
| Beta | 0.02 | — | shown | — |
| Alpha | 2 | — | shown | — |
| Lambda | 0 | — | shown | — |
| Cgs | 0 | pF | — | — |
| Cgd | 0 | pF | — | — |
| CapModel | 1 | — | — | — |
| Vbi | 1 | V | — | — |
| Mj | 0.5 | — | — | — |
| Fc | 0.5 | — | — | — |
| Is | 0 | A | — | — |
| N | 1 | — | — | — |
| Xti | 0 | — | — | — |
| Eg | 1.16 | V | — | — |
| Temp | 26.85 | — | — | — |
| Tnom | 26.85 | — | — | — |
| Ri | 0 | Ω | — | Intrinsic gate resistance, in series with Cgs on an internal node. It is the resistance the gate temperature Tg applies to. 0 means none, and the model is then exactly what it was without it. |
| Tg | — | — | — | Gate noise temperature, in kelvin: Ri is thermal at this temperature. Blank is the device temperature. |
| Td | — | — | — | Drain noise temperature, in kelvin: the output conductance gds is thermal at it, a noise current 4k*Td*gds. Blank means no drain noise. One number at every bias: a drain temperature that follows bias is a composed FET's (a .cmodel Noise block). |
| Kf | 0 | — | — | Flicker noise coefficient: a 1/f noise current Kf*|I|^Af/f on the drain current. 0 is off. |
| Af | 1 | — | — | Flicker noise exponent on the current. 1 is the usual value. |
| Betatc | 0 | — | — | — |
| Alphatc | 0 | — | — | — |
| Vtotc | 0 | — | — | — |
Curtice–Ettenberg cubic (FET_CurticeCubic)
The Curtice–Ettenberg cubic law: A0–A3, Gamma, Beta and Vds0.
| Net | Terminal |
|---|---|
| 1 | g |
| 2 | d |
| 3 | s |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| A0 | 0.1 | — | shown | — |
| A1 | 0.05 | — | shown | — |
| A2 | 0 | — | shown | — |
| A3 | 0 | — | shown | — |
| Gamma | 2 | — | shown | — |
| Beta | 0 | — | — | — |
| Vds0 | 5 | V | — | — |
| Cgs | 0 | pF | — | — |
| Cgd | 0 | pF | — | — |
| CapModel | 1 | — | — | — |
| Vbi | 1 | V | — | — |
| Mj | 0.5 | — | — | — |
| Fc | 0.5 | — | — | — |
| Is | 0 | A | — | — |
| N | 1 | — | — | — |
| Xti | 0 | — | — | — |
| Eg | 1.16 | V | — | — |
| Temp | 26.85 | — | — | — |
| Tnom | 26.85 | — | — | — |
| Ri | 0 | Ω | — | Intrinsic gate resistance, in series with Cgs on an internal node. It is the resistance the gate temperature Tg applies to. 0 means none, and the model is then exactly what it was without it. |
| Tg | — | — | — | Gate noise temperature, in kelvin: Ri is thermal at this temperature. Blank is the device temperature. |
| Td | — | — | — | Drain noise temperature, in kelvin: the output conductance gds is thermal at it, a noise current 4k*Td*gds. Blank means no drain noise. One number at every bias: a drain temperature that follows bias is a composed FET's (a .cmodel Noise block). |
| Kf | 0 | — | — | Flicker noise coefficient: a 1/f noise current Kf*|I|^Af/f on the drain current. 0 is off. |
| Af | 1 | — | — | Flicker noise exponent on the current. 1 is the usual value. |
| Gammatc | 0 | — | — | — |
Statz (FET_Statz)
The Statz law: Vto, Beta, B, Alpha and Lambda.
| Net | Terminal |
|---|---|
| 1 | g |
| 2 | d |
| 3 | s |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| Vto | -2 | V | shown | — |
| Beta | 0.02 | — | shown | — |
| B | 0.3 | — | shown | — |
| Alpha | 2 | — | shown | — |
| Lambda | 0 | — | — | — |
| Cgs | 0 | pF | — | — |
| Cgd | 0 | pF | — | — |
| CapModel | 1 | — | — | — |
| Vbi | 1 | V | — | — |
| Mj | 0.5 | — | — | — |
| Fc | 0.5 | — | — | — |
| Is | 0 | A | — | — |
| N | 1 | — | — | — |
| Xti | 0 | — | — | — |
| Eg | 1.16 | V | — | — |
| Temp | 26.85 | — | — | — |
| Tnom | 26.85 | — | — | — |
| Ri | 0 | Ω | — | Intrinsic gate resistance, in series with Cgs on an internal node. It is the resistance the gate temperature Tg applies to. 0 means none, and the model is then exactly what it was without it. |
| Tg | — | — | — | Gate noise temperature, in kelvin: Ri is thermal at this temperature. Blank is the device temperature. |
| Td | — | — | — | Drain noise temperature, in kelvin: the output conductance gds is thermal at it, a noise current 4k*Td*gds. Blank means no drain noise. One number at every bias: a drain temperature that follows bias is a composed FET's (a .cmodel Noise block). |
| Kf | 0 | — | — | Flicker noise coefficient: a 1/f noise current Kf*|I|^Af/f on the drain current. 0 is off. |
| Af | 1 | — | — | Flicker noise exponent on the current. 1 is the usual value. |
| Betatc | 0 | — | — | — |
| Alphatc | 0 | — | — | — |
| Vtotc | 0 | — | — | — |
Materka–Kacprzak (FET_Materka)
The Materka–Kacprzak law: Idss, Vp0, Gamma and Alpha.
| Net | Terminal |
|---|---|
| 1 | g |
| 2 | d |
| 3 | s |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| Idss | 0.1 | A | shown | — |
| Vp0 | -2 | V | shown | — |
| Gamma | 0 | — | shown | — |
| Alpha | 2 | — | shown | — |
| Cgs | 0 | pF | — | — |
| Cgd | 0 | pF | — | — |
| CapModel | 1 | — | — | — |
| Vbi | 1 | V | — | — |
| Mj | 0.5 | — | — | — |
| Fc | 0.5 | — | — | — |
| Is | 0 | A | — | — |
| N | 1 | — | — | — |
| Xti | 0 | — | — | — |
| Eg | 1.16 | V | — | — |
| Temp | 26.85 | — | — | — |
| Tnom | 26.85 | — | — | — |
| Ri | 0 | Ω | — | Intrinsic gate resistance, in series with Cgs on an internal node. It is the resistance the gate temperature Tg applies to. 0 means none, and the model is then exactly what it was without it. |
| Tg | — | — | — | Gate noise temperature, in kelvin: Ri is thermal at this temperature. Blank is the device temperature. |
| Td | — | — | — | Drain noise temperature, in kelvin: the output conductance gds is thermal at it, a noise current 4k*Td*gds. Blank means no drain noise. One number at every bias: a drain temperature that follows bias is a composed FET's (a .cmodel Noise block). |
| Kf | 0 | — | — | Flicker noise coefficient: a 1/f noise current Kf*|I|^Af/f on the drain current. 0 is off. |
| Af | 1 | — | — | Flicker noise exponent on the current. 1 is the usual value. |
| Alphatc | 0 | — | — | — |
| Gammatc | 0 | — | — | — |
| Vtotc | 0 | — | — | — |
Angelov / Chalmers (FET_Angelov)
The Angelov (Chalmers) law: Ipk, Vpk, P1–P3, Alpha and Lambda.
| Net | Terminal |
|---|---|
| 1 | g |
| 2 | d |
| 3 | s |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| Ipk | 0.1 | A | shown | — |
| Vpk | -1 | V | shown | — |
| P1 | 1 | — | shown | — |
| P2 | 0 | — | — | — |
| P3 | 0 | — | — | — |
| Alpha | 2 | — | shown | — |
| Lambda | 0 | — | — | — |
| Cgs | 0 | pF | — | — |
| Cgd | 0 | pF | — | — |
| CapModel | 1 | — | — | — |
| Vbi | 1 | V | — | — |
| Mj | 0.5 | — | — | — |
| Fc | 0.5 | — | — | — |
| Is | 0 | A | — | — |
| N | 1 | — | — | — |
| Xti | 0 | — | — | — |
| Eg | 1.16 | V | — | — |
| Temp | 26.85 | — | — | — |
| Tnom | 26.85 | — | — | — |
| Ri | 0 | Ω | — | Intrinsic gate resistance, in series with Cgs on an internal node. It is the resistance the gate temperature Tg applies to. 0 means none, and the model is then exactly what it was without it. |
| Tg | — | — | — | Gate noise temperature, in kelvin: Ri is thermal at this temperature. Blank is the device temperature. |
| Td | — | — | — | Drain noise temperature, in kelvin: the output conductance gds is thermal at it, a noise current 4k*Td*gds. Blank means no drain noise. One number at every bias: a drain temperature that follows bias is a composed FET's (a .cmodel Noise block). |
| Kf | 0 | — | — | Flicker noise coefficient: a 1/f noise current Kf*|I|^Af/f on the drain current. 0 is off. |
| Af | 1 | — | — | Flicker noise exponent on the current. 1 is the usual value. |
| Alphatc | 0 | — | — | — |
| Vtotc | 0 | — | — | — |
p-channel: Curtice-P, Statz-P, Materka-P
Three of the five laws are also offered as p-channel parts. Polarity is a sign, not a law: every
voltage, current and charge is mirrored, so a p-channel tile is its n-channel counterpart with the
same parameter list and the same equations. Vto (or Vp0) is stated the way a card states it —
positive for a p-channel depletion MESFET — and circuitRF applies the sign itself.
A mirror is unambiguous only where the gate dependence is anchored to a threshold and is even in
it, which is the case for the quadratic, Statz and Materka laws. The
Curtice–Ettenberg cubic and Angelov laws are polynomials fitted directly against
the gate voltage — A0–A3 and P1–P3 — so mirroring
one would have to negate the odd-order coefficients and leave the even ones alone, and no published
convention says a p-channel parameter set is written that way. Guessing would give a device that
simulates and is wrong in its odd-order terms only: a gm curve of the wrong shape, at no bias where
anything obviously breaks. So those two are n-channel only, deliberately. Nothing is lost at import:
a p-channel model card is read as the quadratic law or Statz, never as either of these.
Curtice-P (PFET_Curtice)
| Net | Terminal |
|---|---|
| 1 | g |
| 2 | d |
| 3 | s |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| Vto | 2 | V | shown |
| Beta | 0.02 | — | shown |
| Alpha | 2 | — | shown |
| Lambda | 0 | — | shown |
| Cgs | 0 | pF | — |
| Cgd | 0 | pF | — |
| CapModel | 1 | — | — |
| Vbi | 1 | V | — |
| Mj | 0.5 | — | — |
| Fc | 0.5 | — | — |
| Is | 0 | A | — |
| N | 1 | — | — |
| Xti | 0 | — | — |
| Eg | 1.16 | V | — |
| Temp | 26.85 | — | — |
| Tnom | 26.85 | — | — |
| Ri | 0 | Ω | — |
| Tg | — | — | — |
| Td | — | — | — |
| Kf | 0 | — | — |
| Af | 1 | — | — |
| Betatc | 0 | — | — |
| Alphatc | 0 | — | — |
| Vtotc | 0 | — | — |
Statz-P (PFET_Statz)
| Net | Terminal |
|---|---|
| 1 | g |
| 2 | d |
| 3 | s |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| Vto | 2 | V | shown |
| Beta | 0.02 | — | shown |
| B | 0.3 | — | shown |
| Alpha | 2 | — | shown |
| Lambda | 0 | — | — |
| Cgs | 0 | pF | — |
| Cgd | 0 | pF | — |
| CapModel | 1 | — | — |
| Vbi | 1 | V | — |
| Mj | 0.5 | — | — |
| Fc | 0.5 | — | — |
| Is | 0 | A | — |
| N | 1 | — | — |
| Xti | 0 | — | — |
| Eg | 1.16 | V | — |
| Temp | 26.85 | — | — |
| Tnom | 26.85 | — | — |
| Ri | 0 | Ω | — |
| Tg | — | — | — |
| Td | — | — | — |
| Kf | 0 | — | — |
| Af | 1 | — | — |
| Betatc | 0 | — | — |
| Alphatc | 0 | — | — |
| Vtotc | 0 | — | — |
Materka-P (PFET_Materka)
| Net | Terminal |
|---|---|
| 1 | g |
| 2 | d |
| 3 | s |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| Idss | 0.1 | A | shown |
| Vp0 | 2 | V | shown |
| Gamma | 0 | — | shown |
| Alpha | 2 | — | shown |
| Cgs | 0 | pF | — |
| Cgd | 0 | pF | — |
| CapModel | 1 | — | — |
| Vbi | 1 | V | — |
| Mj | 0.5 | — | — |
| Fc | 0.5 | — | — |
| Is | 0 | A | — |
| N | 1 | — | — |
| Xti | 0 | — | — |
| Eg | 1.16 | V | — |
| Temp | 26.85 | — | — |
| Tnom | 26.85 | — | — |
| Ri | 0 | Ω | — |
| Tg | — | — | — |
| Td | — | — | — |
| Kf | 0 | — | — |
| Af | 1 | — | — |
| Alphatc | 0 | — | — |
| Gammatc | 0 | — | — |
| Vtotc | 0 | — | — |
Noise, in the two-temperature form RF transistor noise is characterised in:
| Key | What it does | Default |
|---|---|---|
Ri |
An intrinsic gate resistance in series with Cgs, on an internal node. With it, the gate diode, Cgs and the drain current's control voltage sit behind it, and Cgd stays on the external gate. |
0: none, and the model is exactly what it is without it |
Tg |
The gate noise temperature, in kelvin: Ri is thermal at it. |
The device temperature |
Td |
The drain noise temperature, in kelvin: the output conductance is thermal at it, a noise current 4k·Td·gds from drain to source. One number at every bias; a drain temperature that follows bias needs a composed FET's .cmodel Noise block. |
Blank: no drain noise |
Kf, Af |
Flicker noise Kf·|Id|^Af/f on the drain current. | 0 (off), 1 |
With none of Ri, Td or Kf set, a FET has no noise sources and the noise analysis names it in its warning. The
family has no extrinsic Rg, Rd or Rs: resistors placed beside it are thermal at their own temperature.
The junction FET
Two tiles — NJFET and PJFET — over the Shichman–Hodges square law, one set of equations with one sign changed.
The two differ in the knee — a MESFET's is a fitted tanh or a piecewise cubic
with its own parameter, a JFET's is the square law's own boundary at Vds = Vgt — and in
the gate: a JFET's gate is a real p-n junction that conducts and stores depletion charge
against both ends of the channel, where the MESFET family models a Schottky gate as one
forward diode. Reading a JFET card as a Curtice quadratic with the tanh ignored gives a
device that simulates and is quantitatively wrong through the whole knee — matched at pinch-off and
matched deep in saturation, and out by tens of percent in between, for every choice of
Alpha.
Vgt = Vgs − Vto
Id = 0 Vgt ≤ 0 cutoff
= Beta·Vds·(2·Vgt − Vds)·(1 + Lambda·Vds) Vds < Vgt linear
= Beta·Vgt²·(1 + Lambda·Vds) Vds ≥ Vgt saturation
The gate is two junctions. Cgs and Cgd are the zero-bias capacitances of bias-dependent
depletion charge, not fixed capacitors: Cgd falls as the gate-drain junction is reverse-biased,
which at RF is most of the reverse isolation. Both junctions also conduct, with a diffusion term and
an optional recombination term (Isr/Nr) that is a second exponential with its own ideality —
folding it into the first would fit one decade of the gate leakage and miss the rest.
The device is symmetric, like the MOS transistor: which end acts as the drain is decided by the
bias. Rd and Rs are model parameters, on internal nodes circuitRF mints, not resistors you
place beside the device.
Vtotc shifts the pinch-off additively, in volts per degree; Betatce scales Beta in percent
per degree — 1.01^(tc·ΔT), which is not the same as 1 + 0.01·tc·ΔT once ΔT is more than a few
tens of degrees. The two forms are the published ones and they are not interchangeable.
Gate breakdown; the doping-profile knee that a higher published
JFET level adds (its B parameter) and that level's own channel-length modulation
(Alpha/Vk) — there is no square-law parameter that means the same thing, so
a card stating them is imported as the square law with those parameters named rather than
folded into Lambda; transit-time charge; flicker
noise; and self-heating.
n-channel (JFET_N)
The gate arrow points into the channel. The channel bar is unbroken — a depletion device, conducting at zero gate bias, which is the opposite of the MOS glyph's three segments.
| Net | Terminal |
|---|---|
| 1 | d |
| 2 | g |
| 3 | s |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| Vto | -2 | V | shown |
| Beta | 1e-4 | — | shown |
| Lambda | 0 | — | shown |
| Is | 1e-14 | A | — |
| N | 1 | — | — |
| Isr | 0 | A | — |
| Nr | 2 | — | — |
| Cgs | 0 | pF | shown |
| Cgd | 0 | pF | shown |
| Pb | 1 | V | — |
| M | 0.5 | — | — |
| Fc | 0.5 | — | — |
| Rd | 0 | Ω | — |
| Rs | 0 | Ω | — |
| Area | 1 | — | — |
| Xti | 3 | — | — |
| Eg | 1.16 | V | — |
| Vtotc | 0 | — | — |
| Betatce | 0 | — | — |
| Temp | 26.85 | — | — |
| Tnom | 26.85 | — | — |
p-channel (JFET_P)
The gate arrow points out of the channel. Same equations, every sign reversed — so Vto is
positive, as a p-channel card states it.
| Net | Terminal |
|---|---|
| 1 | d |
| 2 | g |
| 3 | s |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| Vto | -2 | V | shown |
| Beta | 1e-4 | — | shown |
| Lambda | 0 | — | shown |
| Is | 1e-14 | A | — |
| N | 1 | — | — |
| Isr | 0 | A | — |
| Nr | 2 | — | — |
| Cgs | 0 | pF | shown |
| Cgd | 0 | pF | shown |
| Pb | 1 | V | — |
| M | 0.5 | — | — |
| Fc | 0.5 | — | — |
| Rd | 0 | Ω | — |
| Rs | 0 | Ω | — |
| Area | 1 | — | — |
| Xti | 3 | — | — |
| Eg | 1.16 | V | — |
| Vtotc | 0 | — | — |
| Betatce | 0 | — | — |
| Temp | 26.85 | — | — |
| Tnom | 26.85 | — | — |
The bipolar transistor
Two components — NPN and PNP — over one set of equations and one parameter list. This is the opposite arrangement from the FET family above, and for the opposite reason: there the five names denote five different drain-current laws, while here the parameter list is identical and only a sign differs. It is still two components rather than one with a polarity setting, because the two draw differently: the emitter arrow is the whole of what tells a reader which transistor is on the schematic, and a setting would leave the drawing and the netlist free to disagree.
Terminals. Three pins — collector top, base left, emitter bottom. The base is an ordinary pin and so is the emitter: these are not hard-wired to any configuration.
Rb, Re and Rc are model parameters, not separately placed resistors. When one of them is non-zero
the elaborator mints the internal node itself, so the schematic shows one device either way. They are
not optional detail at RF — Rb sets the input match and the noise, Re degenerates the
transconductance, and all three are shunted by the junction capacitances — which is why the internal
nodes are genuine unknowns rather than being folded away. Folding them would be exact at DC and wrong
in harmonic balance, where an internal node carries its own harmonic content.
What is modelled
The standard charge-control model. Vt is kT/q at the device temperature; primed voltages are taken
at the internal nodes, inside the parasitic resistances.
Icc = Is·(exp(Vb'e'/(Nf·Vt)) − 1) forward transport
Iec = Is·(exp(Vb'c'/(Nr·Vt)) − 1) reverse transport
Ibe = Icc/Bf + Ise·(exp(Vb'e'/(Ne·Vt)) − 1) base current, emitter junction
Ibc = Iec/Br + Isc·(exp(Vb'c'/(Nc·Vt)) − 1) base current, collector junction
Ict = (Icc − Iec)/qb collector-to-emitter transport
q1 = 1 / (1 − Vb'c'/Vaf − Vb'e'/Var) base-width modulation (the Early effect)
q2 = Icc/Ikf + Iec/Ikr high-level injection
qb = q1/2 · (1 + sqrt(1 + 4·q2))
Qbe = Qj(Vb'e'; Cje,Vje,Mje) + Tff·Icc/qb depletion + diffusion charge
Qbc = Xcjc·Qj(Vb'c'; Cjc,Vjc,Mjc) + Tr·Iec
Tff = Tf·(1 + Xtf·(Icc/(Icc+Itf))²·exp(Vb'c'/(1.44·Vtf)))
Every derivative of every one of those is computed analytically rather than by finite differences, which matters inside a Newton loop precisely where the device is most nonlinear.
Vaf and Var at zero mean the Early effect is switched off — never "the Early
voltage is zero volts". The same rule applies to Ikf/Ikr (no high-level
injection), Ise/Isc (no low-bias leakage) and to each of the three parasitic
resistances. This is the same convention the diode's Bv follows.
The base resistance is current-dependent. With Irb given it follows the standard
conductivity-modulation relation, falling from Rb at zero base current towards Rbm at high current;
with Irb zero it follows Rbm + (Rb − Rbm)/qb instead, which is the same physics stated through the
base charge. Both are in the published model, and which one applies is decided by the parameter set.
Xcjc splits the collector junction across the base resistance. That fraction of Cjc sits on the
internal base node and the remainder runs from the external base to the internal collector — a real
distributed effect, and the reason a device's feedback capacitance does not simply see Rb. When Rb
is zero the two nodes are the same net and the halves add back to Cjc, so nothing special happens.
The substrate junction (Cjs/Vjs/Mjs) — a
discrete RF transistor has no substrate terminal to attach it to, and adding a fourth pin would change
what the symbol means. Excess phase (Ptf) — it is a delay, and circuitRF's
weighting functions carry 1 and jω, not exp(−jωτ), so accepting the parameter would be accepting a value
that does nothing. Self-heating — the device temperature is a parameter, not a
solved node, so there is no electrothermal feedback. Package parasitics — the lead
inductances and package capacitances of a real part are separate components you place around the
transistor, not parameters of it. A parameter this model does not read is not offered in the palette.
If your application depends on any of the above, use a compiled model through
VerilogA instead.
A freshly dragged transistor carries a complete small-signal RF silicon parameter set, so it simulates at gigahertz frequencies before you have edited anything. Treat it as a starting point: it is a generic device, not a model of any particular part, and the numbers should be replaced with the ones for the transistor you actually have.
n-p-n (BJT_NPN)
The emitter arrow points out of the base — conventional current leaving the emitter.
| Net | Terminal |
|---|---|
| 1 | c |
| 2 | b |
| 3 | e |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| Is | 9.57e-17 | A | shown | — |
| Bf | 131.1 | — | shown | — |
| Nf | 1 | — | — | — |
| Vaf | 71.02 | V | shown | — |
| Ikf | 0.09745 | A | — | — |
| Ise | 1.618e-15 | A | — | — |
| Ne | 1.692 | — | — | — |
| Br | 3.287 | — | — | — |
| Nr | 0.959 | — | — | — |
| Var | 4.081 | V | — | — |
| Ikr | 0.07617 | A | — | — |
| Isc | 5.969e-15 | A | — | — |
| Nc | 1.974 | — | — | — |
| Rb | 9.72444 | Ω | — | — |
| Irb | 3.017e-6 | A | — | — |
| Rbm | 6.94667 | Ω | — | — |
| Re | 0.7979 | Ω | — | — |
| Rc | 2.089 | Ω | — | — |
| Cje | 82.87 | fF | — | — |
| Vje | 0.8281 | V | — | — |
| Mje | 0.7138 | — | — | — |
| Cjc | 87.81 | fF | — | — |
| Vjc | 0.7715 | V | — | — |
| Mjc | 0.7552 | — | — | — |
| Xcjc | 0.6209 | — | — | — |
| Fc | 0.6275 | — | — | — |
| Tf | 1.72653e-11 | — | shown | — |
| Xtf | 0.07 | — | — | — |
| Vtf | 0.00381019 | V | — | — |
| Itf | 0.027024 | A | — | — |
| Tr | 1.71536e-8 | — | — | — |
| Area | 1 | — | — | — |
| Xti | 6.548 | — | — | — |
| Xtb | 1.303 | — | — | — |
| Eg | 1.11 | V | — | — |
| Temp | 26.85 | — | — | — |
| Tnom | 26.85 | — | — | — |
| Kf | 0 | — | — | Flicker noise coefficient: a 1/f noise current Kf*|I|^Af/f on the base current. 0 is off. |
| Af | 1 | — | — | Flicker noise exponent on the current. 1 is the usual value. |
p-n-p (BJT_PNP)
The emitter arrow points into the base. Same equations, same parameter names, every voltage and current negated — so a parameter set written for one polarity is used unchanged for the other.
| Net | Terminal |
|---|---|
| 1 | c |
| 2 | b |
| 3 | e |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| Is | 9.57e-17 | A | shown | — |
| Bf | 131.1 | — | shown | — |
| Nf | 1 | — | — | — |
| Vaf | 71.02 | V | shown | — |
| Ikf | 0.09745 | A | — | — |
| Ise | 1.618e-15 | A | — | — |
| Ne | 1.692 | — | — | — |
| Br | 3.287 | — | — | — |
| Nr | 0.959 | — | — | — |
| Var | 4.081 | V | — | — |
| Ikr | 0.07617 | A | — | — |
| Isc | 5.969e-15 | A | — | — |
| Nc | 1.974 | — | — | — |
| Rb | 9.72444 | Ω | — | — |
| Irb | 3.017e-6 | A | — | — |
| Rbm | 6.94667 | Ω | — | — |
| Re | 0.7979 | Ω | — | — |
| Rc | 2.089 | Ω | — | — |
| Cje | 82.87 | fF | — | — |
| Vje | 0.8281 | V | — | — |
| Mje | 0.7138 | — | — | — |
| Cjc | 87.81 | fF | — | — |
| Vjc | 0.7715 | V | — | — |
| Mjc | 0.7552 | — | — | — |
| Xcjc | 0.6209 | — | — | — |
| Fc | 0.6275 | — | — | — |
| Tf | 1.72653e-11 | — | shown | — |
| Xtf | 0.07 | — | — | — |
| Vtf | 0.00381019 | V | — | — |
| Itf | 0.027024 | A | — | — |
| Tr | 1.71536e-8 | — | — | — |
| Area | 1 | — | — | — |
| Xti | 6.548 | — | — | — |
| Xtb | 1.303 | — | — | — |
| Eg | 1.11 | V | — | — |
| Temp | 26.85 | — | — | — |
| Tnom | 26.85 | — | — | — |
| Kf | 0 | — | — | Flicker noise coefficient: a 1/f noise current Kf*|I|^Af/f on the base current. 0 is off. |
| Af | 1 | — | — | Flicker noise exponent on the current. 1 is the usual value. |
Noise. Base shot noise 2q·|Ib| across the internal base–emitter junction and collector shot noise 2q·|Ic|
across the internal collector–emitter, always on; flicker noise Kf·|Ib|^Af/f beside the base shot when Kf is set;
and thermal noise 4kT/R across each of Rb (at its current-modulated value), Re and Rc that is present.
The MOS transistor
Two tiles — NMOS1 and PMOS1 — over one set of equations with one sign changed, arranged like
the bipolar pair rather than like the five FET laws. The 1 is the level: the Shichman–Hodges
square law, the original compact MOSFET model and the one every later level is written as a
departure from.
Drain, gate, source and bulk. The bulk is a real terminal and not a convenience:
tying it internally to the source would silently delete the body effect, which is
what Gamma and Phi describe and which is worth hundreds of millivolts of
threshold in a circuit where the source does not sit at the substrate potential. A part whose bulk
really is tied to its source says so by wiring the pin — one wire, and then the schematic states
the fact instead of hiding it. Leave the pin unwired and the substrate floats, which solves, and is
a different circuit.
What is modelled
Vth = Vto + Gamma·(√(Phi − Vbs) − √Phi)
Vgt = Vgs − Vth
Id = 0 Vgt ≤ 0 cutoff
= Beta·(Vgt − Vds/2)·Vds·(1 + Lambda·Vds) Vds < Vgt linear
= (Beta/2)·Vgt²·(1 + Lambda·Vds) Vds ≥ Vgt saturation
Beta = Kp·W/Leff, Leff = L − 2·Ld
The device is symmetric. Which terminal acts as the drain is decided by the bias, not by the
schematic: drive Vds negative and circuitRF swaps the two ends and evaluates the law in the
orientation it is published in. A model that did not would return a plausible, wrong current for
every transmission gate and every passive mixer ever drawn.
Both bulk junctions are real diodes, with their own saturation currents, their own depletion charge and their own sidewall term. They are what makes the substrate connection matter, and they are why a bulk biased above the source or the drain draws enormous current — as it does in silicon.
Rd and Rs are model parameters, not resistors you place. A non-zero one moves the intrinsic
transistor onto an internal node circuitRF mints for it, so the schematic shows one device either
way. That node is a genuine unknown rather than something eliminated locally: at RF the ohmic
resistances are shunted by the junction and overlap capacitances, and collapsing them is exact at DC
and wrong in harmonic balance.
Several parameters come in pairs — Kp or Uo, Gamma/Phi
or Nsub, Rd/Rs or Rsh with Nrd/Nrs,
Cbd/Cbs or Cj/Cjsw with the junction areas. They are
not alternative spellings of one number: circuitRF derives the device quantity from the process one
only where the device quantity is absent, and a value you state always wins.
The gate charge
The intrinsic gate charge is the charge-based long-channel result, not the Meyer capacitance set that a transient simulator conventionally uses.
That difference matters here more than it does in a time-stepping simulator. Meyer's model states
three capacitances that each depend on more than one terminal voltage, so the charge they imply
depends on the path taken through the bias space — go once around a harmonic cycle and it does
not return to where it started, and a periodic steady-state solve has nothing to converge to.
Integrating the channel charge directly is conservative by construction, and its derivatives reduce
to exactly Meyer's capacitances wherever Meyer's are right: Cox at Vds = 0, two thirds of Cox
in saturation, zero in cutoff.
The channel charge is split evenly between the drain and the source. The alternative 40/60 split is the better one in a switching transient; at RF both ends see the same signal through the same channel resistance, and the even split is what keeps the device symmetric under the drain/source swap above.
Tox means no gate capacitance
Tox is the only thing that sets the oxide capacitance, so a parameter set that does
not state one has no intrinsic gate charge at all — only the Cgso,
Cgdo and Cgbo overlaps remain. That is the published rule and circuitRF
does not invent a thickness to fill it, because there is nothing on the card to derive one from. It
is worth knowing before wondering where the gain went.
Subthreshold conduction (Nfs) — the classical law goes to exactly
zero at threshold, so a device biased there is being asked a question this model cannot answer.
Short-channel effects — drain-induced barrier lowering, mobility degradation,
velocity saturation and channel-length modulation done properly are what the higher levels add;
here Lambda is a single fitted output slope and nothing else.
Self-heating — the device temperature is a parameter, not a solved node.
A parameter this model does not read is not offered in the palette. If your application depends on
any of the above, use a compiled model through VerilogA instead.
Unlike the bipolar tiles, a freshly dragged MOS transistor carries a threshold, a transconductance parameter and a geometry, with every process quantity at zero. A MOS parameter set is a property of a process, and there is no such thing as a representative one — inventing plausible numbers here would put a specific fabricated transistor in the palette and let you simulate it without ever noticing you had not supplied a model.
n-channel (MOS1_N)
The bulk arrow points into the channel — the substrate junction read the usual way. The channel bar is drawn in three segments, the standard mark for an enhancement device: there is no channel until the gate makes one, so the part is off at zero gate bias.
| Net | Terminal |
|---|---|
| 1 | d |
| 2 | g |
| 3 | s |
| 4 | b |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| Vto | 1 | V | shown | — |
| Kp | 2e-5 | — | shown | — |
| Gamma | 0 | — | shown | — |
| Phi | 0.6 | V | — | — |
| Lambda | 0 | — | shown | — |
| W | 100 | um | shown | — |
| L | 100 | um | shown | — |
| Ld | 0 | um | — | — |
| Tox | 0 | nm | — | — |
| Uo | 600 | — | — | — |
| Nsub | 0 | — | — | — |
| Cgso | 0 | — | — | — |
| Cgdo | 0 | — | — | — |
| Cgbo | 0 | — | — | — |
| Is | 1e-14 | A | — | — |
| Js | 0 | — | — | — |
| N | 1 | — | — | — |
| Cbd | 0 | fF | — | — |
| Cbs | 0 | fF | — | — |
| Cj | 0 | — | — | — |
| Cjsw | 0 | — | — | — |
| Ad | 0 | — | — | — |
| As | 0 | — | — | — |
| Pd | 0 | um | — | — |
| Ps | 0 | um | — | — |
| Pb | 0.8 | V | — | — |
| Mj | 0.5 | — | — | — |
| Mjsw | 0.33 | — | — | — |
| Fc | 0.5 | — | — | — |
| Rd | 0 | Ω | — | — |
| Rs | 0 | Ω | — | — |
| Rsh | 0 | Ω | — | — |
| Nrd | 0 | — | — | — |
| Nrs | 0 | — | — | — |
| Xti | 3 | — | — | — |
| Eg | 1.16 | V | — | — |
| Temp | 26.85 | — | — | — |
| Tnom | 26.85 | — | — | — |
| Kf | 0 | — | — | Flicker noise coefficient: a 1/f noise current Kf*|I|^Af/f on the drain current, divided by Cox*L^2 (it needs Tox). 0 is off. |
| Af | 1 | — | — | Flicker noise exponent on the current. 1 is the usual value. |
| GammaN | 2/3 | — | — | Channel thermal noise coefficient: the channel's noise current is 4kT*GammaN*gm. 2/3 is the long-channel value; short channels are higher. |
p-channel (MOS1_P)
The bulk arrow points out of the channel. Same equations, same parameter names, every voltage,
current and charge negated — so Vto is stated as the card states it, negative for an ordinary
p-channel enhancement device, and circuitRF applies the sign itself.
| Net | Terminal |
|---|---|
| 1 | d |
| 2 | g |
| 3 | s |
| 4 | b |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| Vto | 1 | V | shown | — |
| Kp | 2e-5 | — | shown | — |
| Gamma | 0 | — | shown | — |
| Phi | 0.6 | V | — | — |
| Lambda | 0 | — | shown | — |
| W | 100 | um | shown | — |
| L | 100 | um | shown | — |
| Ld | 0 | um | — | — |
| Tox | 0 | nm | — | — |
| Uo | 600 | — | — | — |
| Nsub | 0 | — | — | — |
| Cgso | 0 | — | — | — |
| Cgdo | 0 | — | — | — |
| Cgbo | 0 | — | — | — |
| Is | 1e-14 | A | — | — |
| Js | 0 | — | — | — |
| N | 1 | — | — | — |
| Cbd | 0 | fF | — | — |
| Cbs | 0 | fF | — | — |
| Cj | 0 | — | — | — |
| Cjsw | 0 | — | — | — |
| Ad | 0 | — | — | — |
| As | 0 | — | — | — |
| Pd | 0 | um | — | — |
| Ps | 0 | um | — | — |
| Pb | 0.8 | V | — | — |
| Mj | 0.5 | — | — | — |
| Mjsw | 0.33 | — | — | — |
| Fc | 0.5 | — | — | — |
| Rd | 0 | Ω | — | — |
| Rs | 0 | Ω | — | — |
| Rsh | 0 | Ω | — | — |
| Nrd | 0 | — | — | — |
| Nrs | 0 | — | — | — |
| Xti | 3 | — | — | — |
| Eg | 1.16 | V | — | — |
| Temp | 26.85 | — | — | — |
| Tnom | 26.85 | — | — | — |
| Kf | 0 | — | — | Flicker noise coefficient: a 1/f noise current Kf*|I|^Af/f on the drain current, divided by Cox*L^2 (it needs Tox). 0 is off. |
| Af | 1 | — | — | Flicker noise exponent on the current. 1 is the usual value. |
| GammaN | 2/3 | — | — | Channel thermal noise coefficient: the channel's noise current is 4kT*GammaN*gm. 2/3 is the long-channel value; short channels are higher. |
Level 3: the short-channel law
NMOS3 and PMOS3 are the same four terminals and the same glyph over a different set of
equations — the semi-empirical short-channel model. Two more tiles rather than a Level parameter on
the level-1 ones, for the reason the five FET laws are five tiles: a level is a different law, and
its six parameters mean nothing to the other one.
Each parameter turns on exactly one mechanism and each is off at zero, so a level-3 card stating two or three of them is an ordinary thing to import.
| Parameter | What it turns on |
|---|---|
Eta |
Drain-induced barrier lowering — the threshold falls as the drain is pulled up. This is what makes a short device's output conductance real, and it is why level 3 has no Lambda. |
Theta |
Mobility degradation with gate field — carriers pressed against the oxide scatter off it, so transconductance stops rising with gate drive. |
Vmax |
Velocity saturation. Carriers stop going faster, so the device saturates earlier than pinch-off would put it. |
Kappa |
Channel-length modulation, done as a real shortening of the channel rather than as a multiplier on the current. |
Xj with Nsub |
Short-channel charge sharing — the source and drain depletion regions take a share of the bulk charge the gate would otherwise hold, so the body effect weakens as the channel gets shorter. |
Delta |
The narrow-width effect, which pushes the threshold the other way. |
Turn all six off and the square law does come back — but only on a device with no body
effect. The bulk-charge factor is itself a level-3 term: it replaces the square law's
plain Vds/2 with (1 + fb)·Vds/2, and fb is driven by
Gamma, not by any of the six. So the two levels genuinely differ by around fifteen
percent of drain current on a device that states a body effect and nothing else. That is a real
difference between the two published laws, and worth knowing before comparing them.
Kappa and Xj need Nsub
Both are built from the substrate depletion width, and nothing but the doping supplies one. State
either without Nsub and it is carried, read, and inert — the import reports this when it
sees it, but a hand-edited device will not tell you.
Subthreshold conduction (Nfs) and impact ionisation are still absent, exactly as at level 1.
The current goes to zero at threshold in both.
n-channel (MOS3_N)
| Net | Terminal |
|---|---|
| 1 | d |
| 2 | g |
| 3 | s |
| 4 | b |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| Vto | 1 | V | shown | — |
| Kp | 2e-5 | — | shown | — |
| Gamma | 0 | — | shown | — |
| Phi | 0.6 | V | — | — |
| W | 100 | um | shown | — |
| L | 100 | um | shown | — |
| Ld | 0 | um | — | — |
| Tox | 0 | nm | — | — |
| Eta | 0 | — | shown | — |
| Theta | 0 | — | shown | — |
| Kappa | 0.2 | — | — | — |
| Vmax | 0 | — | shown | — |
| Delta | 0 | — | — | — |
| Xj | 0 | um | — | — |
| Uo | 600 | — | — | — |
| Nsub | 0 | — | — | — |
| Cgso | 0 | — | — | — |
| Cgdo | 0 | — | — | — |
| Cgbo | 0 | — | — | — |
| Is | 1e-14 | A | — | — |
| Js | 0 | — | — | — |
| N | 1 | — | — | — |
| Cbd | 0 | fF | — | — |
| Cbs | 0 | fF | — | — |
| Cj | 0 | — | — | — |
| Cjsw | 0 | — | — | — |
| Ad | 0 | — | — | — |
| As | 0 | — | — | — |
| Pd | 0 | um | — | — |
| Ps | 0 | um | — | — |
| Pb | 0.8 | V | — | — |
| Mj | 0.5 | — | — | — |
| Mjsw | 0.33 | — | — | — |
| Fc | 0.5 | — | — | — |
| Rd | 0 | Ω | — | — |
| Rs | 0 | Ω | — | — |
| Rsh | 0 | Ω | — | — |
| Nrd | 0 | — | — | — |
| Nrs | 0 | — | — | — |
| Xti | 3 | — | — | — |
| Eg | 1.16 | V | — | — |
| Temp | 26.85 | — | — | — |
| Tnom | 26.85 | — | — | — |
| Kf | 0 | — | — | Flicker noise coefficient: a 1/f noise current Kf*|I|^Af/f on the drain current, divided by Cox*L^2 (it needs Tox). 0 is off. |
| Af | 1 | — | — | Flicker noise exponent on the current. 1 is the usual value. |
| GammaN | 2/3 | — | — | Channel thermal noise coefficient: the channel's noise current is 4kT*GammaN*gm. 2/3 is the long-channel value; short channels are higher. |
p-channel (MOS3_P)
| Net | Terminal |
|---|---|
| 1 | d |
| 2 | g |
| 3 | s |
| 4 | b |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| Vto | 1 | V | shown | — |
| Kp | 2e-5 | — | shown | — |
| Gamma | 0 | — | shown | — |
| Phi | 0.6 | V | — | — |
| W | 100 | um | shown | — |
| L | 100 | um | shown | — |
| Ld | 0 | um | — | — |
| Tox | 0 | nm | — | — |
| Eta | 0 | — | shown | — |
| Theta | 0 | — | shown | — |
| Kappa | 0.2 | — | — | — |
| Vmax | 0 | — | shown | — |
| Delta | 0 | — | — | — |
| Xj | 0 | um | — | — |
| Uo | 600 | — | — | — |
| Nsub | 0 | — | — | — |
| Cgso | 0 | — | — | — |
| Cgdo | 0 | — | — | — |
| Cgbo | 0 | — | — | — |
| Is | 1e-14 | A | — | — |
| Js | 0 | — | — | — |
| N | 1 | — | — | — |
| Cbd | 0 | fF | — | — |
| Cbs | 0 | fF | — | — |
| Cj | 0 | — | — | — |
| Cjsw | 0 | — | — | — |
| Ad | 0 | — | — | — |
| As | 0 | — | — | — |
| Pd | 0 | um | — | — |
| Ps | 0 | um | — | — |
| Pb | 0.8 | V | — | — |
| Mj | 0.5 | — | — | — |
| Mjsw | 0.33 | — | — | — |
| Fc | 0.5 | — | — | — |
| Rd | 0 | Ω | — | — |
| Rs | 0 | Ω | — | — |
| Rsh | 0 | Ω | — | — |
| Nrd | 0 | — | — | — |
| Nrs | 0 | — | — | — |
| Xti | 3 | — | — | — |
| Eg | 1.16 | V | — | — |
| Temp | 26.85 | — | — | — |
| Tnom | 26.85 | — | — | — |
| Kf | 0 | — | — | Flicker noise coefficient: a 1/f noise current Kf*|I|^Af/f on the drain current, divided by Cox*L^2 (it needs Tox). 0 is off. |
| Af | 1 | — | — | Flicker noise exponent on the current. 1 is the usual value. |
| GammaN | 2/3 | — | — | Channel thermal noise coefficient: the channel's noise current is 4kT*GammaN*gm. 2/3 is the long-channel value; short channels are higher. |
Noise. Channel thermal noise 4kT·GammaN·gm across the channel, always on: GammaN is 2/3 for a long channel, so
the default is (8/3)kT·gm, and a short-channel device takes a larger value. (It is not called Gamma, which is the
body-effect coefficient.) Flicker noise Kf·|Id|^Af/(Cox·L²·f) when Kf is set and the card states Tox, which is
what gives Cox; and thermal noise across Rd and Rs when they are present.
The vertical power MOSFET
NVDMOS and PVDMOS — a separate component from the lateral MOS pair, not a setting of it. Three pins, not four: the source-to-body short is inside the silicon, and that is exactly what turns the substrate junction into a body diode between source and drain.
Three things a power MOSFET is chosen for are absent from the lateral model, and every one is what a user is asking about when they reach for this part.
The body diode is a component of the circuit, not a leakage path. It is the freewheeling diode of
every half-bridge and the conduction path of every synchronous rectifier during dead time, and it
carries the full load current there. So it has its own saturation current, its own reverse recovery
charge (Tt) and its own avalanche breakdown (Bv) — a rated mode for this part, not a failure —
and its current is reported on its own branch, I:M1:body.
The gate-drain capacitance collapses with drain bias, by one to two orders of magnitude. That
collapse is the switching loss: the Miller plateau is the gate charge pouring into it while the
drain swings. Cgdmax and Cgdmin are the two ends of a data sheet's reverse-transfer curve and
Vgdt is how sharply it falls between them. A constant capacitance of either plateau value gets the
switching time wrong by the ratio of the two.
The gate resistance Rg is in the drive path, in series with a capacitance that large, so it sets
the switching speed as much as the drive current does.
Pull the drain below the source with the gate on and the channel conducts in reverse,
shunting the body diode, so the drop is I·Rds(on) rather than a diode drop. That is
synchronous rectification, and it is what the part is bought for. circuitRF decides which end is
acting as the drain from the bias rather than from the schematic, so this comes out right
without anything being configured.
Quasi-saturation — the drift region's own resistance modulating with current
needs a second internal node and a drift-region model this does not have; Rd stands in
for its low-current limit. Subthreshold conduction — the off-state leakage is
Rds, which you state. Self-heating, which for a power device is a real
omission: the junction temperature is a parameter, so a thermal model belongs around the part rather
than in it.
n-channel (VDMOS_N)
The bulk arm turns and joins the source lead instead of leaving as a fourth pin — that is the source-to-body short — and the body diode is drawn explicitly on the right, conducting from source to drain.
| Net | Terminal |
|---|---|
| 1 | d |
| 2 | g |
| 3 | s |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| Vto | 3 | V | shown | — |
| Kp | 1 | — | shown | — |
| Lambda | 0 | — | — | — |
| Rds | 0 | Ω | — | — |
| Is | 1e-13 | A | — | — |
| N | 1 | — | — | — |
| Bv | 0 | V | shown | — |
| Ibv | 1e-3 | A | — | — |
| Nbv | 1 | — | — | — |
| Tt | 0 | — | — | — |
| Cjo | 0 | pF | — | — |
| Vj | 0.8 | V | — | — |
| Mj | 0.5 | — | — | — |
| Fc | 0.5 | — | — | — |
| Cgs | 0 | pF | shown | — |
| Cgdmax | 0 | pF | shown | — |
| Cgdmin | 0 | pF | shown | — |
| Vgdt | 1 | V | — | — |
| Rg | 0 | Ω | — | — |
| Rd | 0 | Ω | — | — |
| Rs | 0 | Ω | — | — |
| Vtotc | 0 | — | — | — |
| Kptc | 0 | — | — | — |
| Xti | 3 | — | — | — |
| Eg | 1.16 | V | — | — |
| Temp | 26.85 | — | — | — |
| Tnom | 26.85 | — | — | — |
| Kf | 0 | — | — | Flicker noise coefficient: a 1/f noise current Kf*|I|^Af/f on the drain current. 0 is off. |
| Af | 1 | — | — | Flicker noise exponent on the current. 1 is the usual value. |
| GammaN | 2/3 | — | — | Channel thermal noise coefficient: the channel's noise current is 4kT*GammaN*gm. 2/3 is the long-channel value; short channels are higher. |
p-channel (VDMOS_P)
| Net | Terminal |
|---|---|
| 1 | d |
| 2 | g |
| 3 | s |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| Vto | 3 | V | shown | — |
| Kp | 1 | — | shown | — |
| Lambda | 0 | — | — | — |
| Rds | 0 | Ω | — | — |
| Is | 1e-13 | A | — | — |
| N | 1 | — | — | — |
| Bv | 0 | V | shown | — |
| Ibv | 1e-3 | A | — | — |
| Nbv | 1 | — | — | — |
| Tt | 0 | — | — | — |
| Cjo | 0 | pF | — | — |
| Vj | 0.8 | V | — | — |
| Mj | 0.5 | — | — | — |
| Fc | 0.5 | — | — | — |
| Cgs | 0 | pF | shown | — |
| Cgdmax | 0 | pF | shown | — |
| Cgdmin | 0 | pF | shown | — |
| Vgdt | 1 | V | — | — |
| Rg | 0 | Ω | — | — |
| Rd | 0 | Ω | — | — |
| Rs | 0 | Ω | — | — |
| Vtotc | 0 | — | — | — |
| Kptc | 0 | — | — | — |
| Xti | 3 | — | — | — |
| Eg | 1.16 | V | — | — |
| Temp | 26.85 | — | — | — |
| Tnom | 26.85 | — | — | — |
| Kf | 0 | — | — | Flicker noise coefficient: a 1/f noise current Kf*|I|^Af/f on the drain current. 0 is off. |
| Af | 1 | — | — | Flicker noise exponent on the current. 1 is the usual value. |
| GammaN | 2/3 | — | — | Channel thermal noise coefficient: the channel's noise current is 4kT*GammaN*gm. 2/3 is the long-channel value; short channels are higher. |
Noise. Channel thermal noise 4kT·GammaN·gm, always on (GammaN 2/3 by default); flicker noise Kf·|Id|^Af/f
when Kf is set (this model states no oxide geometry, so the density is the card's own); and thermal noise across each
of Rg, Rd and Rs that is present.
The IGBT
NIGBT and PIGBT — an insulated-gate channel driving the base of a wide-base bipolar transistor. That structure is the model, and it is what gets the device's two defining behaviours right without either being fitted.
The on-state voltage has a junction drop in it. Current leaving the collector crosses the
bipolar's emitter-base junction on its way in, so Vce(sat) never falls below roughly a diode drop
however hard the gate is driven. That is the whole trade against a power MOSFET — worse at low
current, better at high, because the drop then stops growing.
Turn-off has a current tail. The charge stored in the wide base cannot be removed through the
gate; it recombines. Tau is that stored charge, and the tail is most of the turn-off loss. How the
current divides between the channel and the bipolar is set by Bf, and it is the bipolar's share
that is still flowing after the gate is off — I:Q1:imos and I:Q1:ic report the two separately.
Bv is forward break-over, across the drift region — the V_CES rating. Note the difference
from the power MOSFET's Bv, which is an avalanche rating and a mode the part is
designed to survive: an IGBT's is a limit, and past it the drift region conducts and turns the
bipolar on with it. Bv = 0 means not modelled, as everywhere else.
That is structural rather than something switched off: with the collector below the emitter the bipolar's junction is reverse-biased and there is no path. It is the opposite of the power MOSFET, whose body diode freewheels — and it is exactly why an IGBT half-bridge needs a discrete anti-parallel diode and a MOSFET one does not. Place one if the circuit has one.
This is an equivalent-circuit model: its base is a lumped transit time rather than a solved carrier distribution, so there is no moving depletion boundary, no conductivity modulation of the drift region and no latch-up. Its parameters are therefore a threshold, a transconductance, a current gain and a transit time — things a data sheet gives.
A .model card written for the published ambipolar transport model states
something else entirely: base width, doping, carrier lifetime, mobility. Neither set can be derived
from the other by renaming — that is a device-modelling extraction, not a mapping — so such a card is
refused by name rather than being given this device's defaults under the card's own name.
Enter the data sheet's numbers here, or run the card's own model through
VerilogA.
n-channel (IGBT_N)
The input side is the MOS one — a gate bar standing off a broken (enhancement) channel bar — and the output side carries the bipolar's emitter arrow. The arrow is not decoration: it is what stops a reader taking this for a power MOSFET and expecting a body diode that is not there.
| Net | Terminal |
|---|---|
| 1 | c |
| 2 | g |
| 3 | e |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| Vto | 5 | V | shown |
| Kp | 8 | — | shown |
| Lambda | 0 | — | — |
| Bf | 0.5 | — | shown |
| Is | 1e-12 | A | — |
| N | 1 | — | — |
| Tau | 1 | us | shown |
| Rbe | 0 | Ω | — |
| Rce | 0 | Ω | — |
| Bv | 0 | V | shown |
| Ibv | 1e-3 | A | — |
| Nbv | 1 | — | — |
| Cjc | 0 | pF | — |
| Vj | 0.8 | V | — |
| Mj | 0.5 | — | — |
| Fc | 0.5 | — | — |
| Cge | 0 | pF | shown |
| Cgcmax | 0 | pF | shown |
| Cgcmin | 0 | pF | shown |
| Vgct | 1 | V | — |
| Rg | 0 | Ω | — |
| Rc | 0 | Ω | — |
| Re | 0 | Ω | — |
| Vtotc | 0 | — | — |
| Kptc | 0 | — | — |
| Xti | 3 | — | — |
| Eg | 1.16 | V | — |
| Temp | 26.85 | — | — |
| Tnom | 26.85 | — | — |
p-channel (IGBT_P)
| Net | Terminal |
|---|---|
| 1 | c |
| 2 | g |
| 3 | e |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic |
|---|---|---|---|
| Vto | 5 | V | shown |
| Kp | 8 | — | shown |
| Lambda | 0 | — | — |
| Bf | 0.5 | — | shown |
| Is | 1e-12 | A | — |
| N | 1 | — | — |
| Tau | 1 | us | shown |
| Rbe | 0 | Ω | — |
| Rce | 0 | Ω | — |
| Bv | 0 | V | shown |
| Ibv | 1e-3 | A | — |
| Nbv | 1 | — | — |
| Cjc | 0 | pF | — |
| Vj | 0.8 | V | — |
| Mj | 0.5 | — | — |
| Fc | 0.5 | — | — |
| Cge | 0 | pF | shown |
| Cgcmax | 0 | pF | shown |
| Cgcmin | 0 | pF | shown |
| Vgct | 1 | V | — |
| Rg | 0 | Ω | — |
| Rc | 0 | Ω | — |
| Re | 0 | Ω | — |
| Vtotc | 0 | — | — |
| Kptc | 0 | — | — |
| Xti | 3 | — | — |
| Eg | 1.16 | V | — |
| Temp | 26.85 | — | — |
| Tnom | 26.85 | — | — |
Ideal Mixer (Mixer)
A three-port ideal mixer: what comes out of the IF port is the product of what goes into the RF and LO ports. RF on the left, LO underneath, IF on the right — the three leads are not interchangeable, which is why each one carries its name.
v_IF (open circuit) = K · v_RF · v_LO
You never type K. You state a conversion gain and the LO drive it holds at — ConvGain = −7 dB at
Plo = +7 dBm, straight off a datasheet — and circuitRF derives the multiplier constant from them,
using each port's impedance. ConvGain is a single-sideband power gain: negative is a loss.
Both sidebands come out. A product of two cosines is half the sum plus half the difference, so an RF tone at 2 GHz against a 1.8 GHz LO puts equal power at 200 MHz and 3.8 GHz. The mixer does not pick one for you; a single-sideband result comes from filtering what leaves the IF port, or from an image-reject network built around two mixers — exactly as it does in hardware.
Conversion gain tracks LO amplitude. That is what a multiplier does, and it is why the gain is
quoted together with Plo. Drive the LO 3 dB harder than Plo and the conversion gain rises 3 dB;
drive it 3 dB softer and it falls. If the LO in your test bench is not delivering Plo to the LO
port, the mixer is not running at the gain you typed.
A real diode or FET mixer commutates: the LO switches the RF path rather than scaling it, which is why a real mixer's conversion loss barely moves once the LO is hard enough to switch. An ideal switching mixer is not expressible here — a component's law is a memoryless function of its port voltages, and hard switching has a derivative no Newton step survives. The product is the ideal mixing law that is expressible, and its LO dependence is stated above rather than hidden.
Non-idealities
A freshly-placed mixer is ideal: the three isolations default to 200 dB and IIP3 to 100 dBm, which
mean none and never compresses. Type a real number into any of them to turn that non-ideality on.
| Parameter | What it does |
|---|---|
Zrf Zlo Zif |
Each port is this resistance to its reference, and the IF output sits behind Zif. Change one and that port is mismatched — the first non-ideality most circuits notice. |
IsoLO_RF |
LO leaking backwards out of the RF port. It is a real voltage at a real port, so it mixes with the LO like anything else there. |
IsoLO_IF |
LO feedthrough at the IF port — usually the one that sets an IF filter's job. |
IsoRF_IF |
RF straight through to IF, unconverted. |
IIP3 |
Input-referred third-order intercept at the RF port. Sets compression and IM3 together, through a soft limiter whose third-order term matches the intercept exactly. |
The limiter is a tanh, not the textbook a₁x − a₃x³. A bare cubic turns over and goes negative
past its peak, and harmonic balance then finds that root and converges cleanly onto a wrong answer.
tanh is monotone everywhere and has the same third-order term.
It reports the port matches and the three leakages, and no conversion at all — and that is the right answer rather than a missing one. S-parameters are a single-frequency measurement, and conversion is the business of moving energy between frequencies. The arithmetic says the same thing: circuitRF linearises a nonlinear device at its DC operating point, and the mixer's RF-to-IF small-signal gain is proportional to the LO voltage, which at DC is zero. So an S-parameter sweep of a mixer is a useful measurement of the thing S-parameters can measure — how well each port is matched, and how much leaks between them.
Conversion gain comes from harmonic balance. Drive the RF and LO ports as two tones, and read the IF power at the mixing product you want. For conversion gain versus frequency, wrap that harmonic-balance analysis in a parametric sweep of the RF frequency — that is the swept measurement an S-parameter run cannot be.
The mixer is also a System block, and the class it belongs to — what the ideal blocks in a system diagram can and cannot answer — is covered in System Components.
| Net | Terminal |
|---|---|
| 1 | RF |
| 2 | LO |
| 3 | IF |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| ConvGain | -7 | dB | shown | Single-sideband power conversion gain, RF port to IF port, at the LO drive Plo names. Negative is a loss. Both sidebands are produced at this level. |
| Plo | 7 | dBm | shown | The LO power the gain above holds at. Mixing is a product, so conversion gain tracks LO amplitude: drive the LO harder than this and you get more. |
| Zrf | 50 | Ω | — | RF port impedance. The port is this resistance to its own reference. |
| Zlo | 50 | Ω | — | LO port impedance. |
| Zif | 50 | Ω | — | IF port impedance — also the source resistance the IF output sits behind. |
| IsoLO_RF | 200 | dB | — | LO-to-RF isolation: how far below the LO its leakage at the RF port sits. The 200 dB default means none — the ideal mixer leaks nothing. |
| IsoLO_IF | 200 | dB | — | LO-to-IF isolation, the LO feedthrough a real mixer shows at its IF port. 200 dB means none. |
| IsoRF_IF | 200 | dB | — | RF-to-IF isolation: straight-through RF feedthrough, unconverted. 200 dB means none. |
| IIP3 | 100 | dBm | — | Input-referred third-order intercept at the RF port, which sets both compression and IM3. The 100 dBm default means the RF path is exactly linear and the mixer never compresses. |
| NF | — | dB | — | Noise figure, RF to IF, of the kind NFType names. Used by harmonic-balance and envelope noise; an S-parameter run has no LO and so no conversion, and leaves the mixer out of its noise. Blank means noiseless. |
| NFType | ssb | — | — | Whether NF is a single-sideband figure (ssb, the receiver cascade's) or a double-sideband one (dsb, as a zero-IF or radiometer measurement states it; 3 dB below SSB for an ideal mixer). |
Differential Mixer (MixerD)
The same component as Mixer — same equations, same parameters, same everything — with all six of its nets brought out as pins instead of three. Use it when a port's return is not ground. Otherwise the single-ended tile is the identical circuit with three fewer wires to draw.
The pins are in ± pairs: rf+ rf− on the left, lo+ lo− along the bottom, if+ if− on the
right. Swapping a pair inverts that port's voltage, which gives a circuit that still solves and is
wrong — so read the marks.
The box body is not a second opinion about what a mixer looks like: six leads cannot land on a circle's edge on the connection grid. The ✕ is kept, and it is the whole of the family resemblance.
| Net | Terminal |
|---|---|
| 1 | rf+ |
| 2 | rf- |
| 3 | lo+ |
| 4 | lo- |
| 5 | if+ |
| 6 | if- |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| ConvGain | -7 | dB | shown | Single-sideband power conversion gain, RF port to IF port, at the LO drive Plo names. Negative is a loss. Both sidebands are produced at this level. |
| Plo | 7 | dBm | shown | The LO power the gain above holds at. Mixing is a product, so conversion gain tracks LO amplitude: drive the LO harder than this and you get more. |
| Zrf | 50 | Ω | — | RF port impedance. The port is this resistance to its own reference. |
| Zlo | 50 | Ω | — | LO port impedance. |
| Zif | 50 | Ω | — | IF port impedance — also the source resistance the IF output sits behind. |
| IsoLO_RF | 200 | dB | — | LO-to-RF isolation: how far below the LO its leakage at the RF port sits. The 200 dB default means none — the ideal mixer leaks nothing. |
| IsoLO_IF | 200 | dB | — | LO-to-IF isolation, the LO feedthrough a real mixer shows at its IF port. 200 dB means none. |
| IsoRF_IF | 200 | dB | — | RF-to-IF isolation: straight-through RF feedthrough, unconverted. 200 dB means none. |
| IIP3 | 100 | dBm | — | Input-referred third-order intercept at the RF port, which sets both compression and IM3. The 100 dBm default means the RF path is exactly linear and the mixer never compresses. |
| NF | — | dB | — | Noise figure, RF to IF, of the kind NFType names. Used by harmonic-balance and envelope noise; an S-parameter run has no LO and so no conversion, and leaves the mixer out of its noise. Blank means noiseless. |
| NFType | ssb | — | — | Whether NF is a single-sideband figure (ssb, the receiver cascade's) or a double-sideband one (dsb, as a zero-IF or radiometer measurement states it; 3 dB below SSB for an ideal mixer). |
Compiled Verilog-A model (VerilogA)
A compact model you supply: point it at Verilog-A source (.va, .vams) or an already-compiled
model (.osdi) and circuitRF runs it. No kit, no manifest, nothing to install. It is variadic — the
model decides how many terminals it has, so Pins sets how many the symbol draws. The body is
deliberately generic, because circuitRF does not know what the model is: drawing a transistor glyph
would assert something the file has not said. The leads are named by the model once the file has
been read, and numbered before that.
Installing a compiler and pointing circuitRF at it, the source-to-simulation walkthrough, loading a fitted parameter set, the thermal terminal and when to leave it off, and exactly when circuitRF rebuilds, are in Compiled Verilog-A Models. The entry here is the glyph, the pins and the parameter table.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. How many there are is set by Pins; the table shows Pins = 2.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| File | — | — | shown | The model to load: a compiled model (.osdi), or Verilog-A source (.va, .vams) which circuitRF builds once with the compiler installed on this machine and reuses until the source changes. Choosing one fills in Model and Pins below. |
| Model | — | — | — | Which device type inside that file to place. A file usually declares one, and then this can be left blank; when it declares several, pick the one you want. |
| Pins | 2 | — | — | How many terminals the symbol draws. It is the model's own terminal count, filled in from the file — change it only if you are drawing before choosing one. |
| OpVars | true | — | — | Whether this instance publishes the operating-point variables its model computes — transconductances, capacitances, node temperatures. On by default; turn it off on devices you are not studying to keep a swept result small. |
| Symbol | — | — | — | The symbol drawn: blank is the FET symbol when the model's terminal names say which is the gate, drain and source, and the box otherwise; VerilogA is the box; a transistor symbol's name, or a .csym path, chooses one. Its pins take the model's terminals by name. |
Composed FET model (ComposedFET)
A transistor model built from measured or simulated device data, placed from its .cmodel file. The
Model Composer writes one from data, and Writing a .cmodel describes the file
for a script of your own:
ComposedFET:X1 g d s File="gan_8x125.cmodel" N=8
It simulates as the circuit it is: the model's extrinsic network as ordinary resistors, inductors,
capacitors and mutuals, and one nonlinear core on the intrinsic nets gi, di and si. So V(X1.gi)
is the intrinsic gate voltage, and each network element has a path of its own (X1.rg). File is
resolved the way an SnP's is.
N is the finger count; blank is the model's own. The core scales by N/N0, and each network element
by its rule — fixed, per finger, or inversely per finger. m places whole devices in parallel, so
m=2 N=8 is two 8-finger devices.
A model over a temperature range follows the design's temp, held to that range. Temp (°C) holds one device at its
own temperature instead — the baseplate or heatsink it is mounted on — while the rest of the design stays at temp:
ComposedFET:X1 g d s File="gan_8x125.cmodel" N=8 Temp=85
A model extracted at one temperature is used as it is at any other, with one warning naming both.
The thermal pin, T
T is neither an input nor an output. It is a thermal node, wired exactly like an electrical one, but it carries temperature and heat instead of voltage and current:
| On the T node | Means |
|---|---|
its voltage, V(X1.t) |
the device's temperature rise above Temp (or temp when that is blank), in °C |
| the current into it | heat, in W: the device puts its own dissipated power in |
| what sits between it and ground | the path that heat takes away |
The model's own thermal network (Rth in parallel with Cth, or its ladder) is already inside the device, from
t to ground. Currents and charges are evaluated at Temp plus the rise. So you read T to see how hot the
channel runs, and you load T to change how the heat leaves.
When the T pin is there. Only a model that self-heats has a thermal node, so only its symbol has the pin. A
freshly dropped ComposedFET has no File yet and shows three pins. To get the fourth pin, set File to a
self-heating .cmodel (one exported with self-heating on in the Model Composer's Thermal step). The standard
symbol then gains the lead on the right marked T, starting at a small open circle. Choosing a model that does not
self-heat takes the pin away again. A library symbol, such as FetCurtice, has only three pins whatever the model is.
Left unwired, T is no connection, and the device keeps its own thermal network. Its end shows an open box
rather than the red unconnected marker, because leaving it open is a valid choice. That is also the usual one:
you can plot V(X1.t) without wiring anything.
Wired, whatever you attach sits in parallel with the model's own network. A heatsink or mounting that adds its own path to ambient is a resistor (°C/W) from T to ground:
ComposedFET:X1 g d s t File="gan_8x125.cmodel"
R:RSINK t 0 R=20
Here 20 °C/W in parallel with the model's own Rth lowers the device's total thermal resistance. Pin 4 is written to
the netlist only when something is wired to it. Binding four nets to a model that does not self-heat is refused at
Run.
To change the device's own thermal network instead of adding to it, use Rth (°C/W) and Cth (J/°C). They set
this device's thermal resistance and capacitance at its finger count, replacing the model's own values scaled to
N; blank keeps the model's. A model with a ladder of thermal poles scales every pole by the same factor. A model
that does not self-heat refuses them. The SelfHeating switch set to false keeps the device at its Temp with no
rise, and T, if wired, then sees none.
ComposedFET:X1 g d s File="gan_8x125.cmodel" N=8 Rth=40 Cth=2.5e-6
The symbol
The Symbol row in the Inspector is a drop-down list of the symbols this model can be drawn with:
- the first entry, which is blank in the file. It means the model's own symbol, or the standard FET symbol when the model names none, and it reads FET (standard, with T pin) for a self-heating model.
- the library FET symbols, whose pins are gate, drain and source, such as
FetCurticeandFetAngelov. - every
.csymin the workspace whose pins fit: pins 1, 2 and 3 areg,dands, and a pin 4 (the thermal nodet) only for a model that self-heats.
The list follows File, so a .csym path is written relative to the .cmodel. A symbol that cannot be found draws
as the standard FET, with one warning.
Ten switches turn one part of the model off on one instance — the intrinsic charge, its nonlinearity (all of it, or one capacitance at a time), gate lag, drain lag, self-heating and dispersion — without refitting anything: Switching parts of the model off. The model's architecture and its gate-lag and drain-lag networks are drawn in How traps work in the model.
| Net | Terminal |
|---|---|
| 1 | g |
| 2 | d |
| 3 | s |
| 4 | t |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| File | — | — | shown | The .cmodel to place — a model the Model Composer exported. |
| N | — | — | shown | The finger count. Blank is the model's own base finger count; the intrinsic device and each network element scale from it by the rule the model records. |
| Symbol | — | — | — | The symbol drawn: a library symbol's name or a .csym path relative to the .cmodel. Blank is the model's own. Its pins 1, 2 and 3 are g, d and s; a pin 4 is the thermal node t. |
| Rth | — | — | — | This device's thermal resistance, °C/W, at its finger count. Blank is the model's own, scaled to N. Only a model that self-heats has one. |
| Cth | — | — | — | This device's thermal capacitance, J/°C, at its finger count. Blank is the model's own, scaled to N. With Rth it sets the thermal time constant Rth·Cth. |
| Temp | — | — | — | This device's temperature, °C — the baseplate or heatsink it is mounted on. Blank follows the design's temp. A self-heating model's channel rises above it. |
| Charge | true | — | — | Off: no intrinsic charge at all. The network's capacitors stay. |
| LinearC | false | — | — | On: the intrinsic charge is linearised at the quiescent DC bias point. |
| LinearCgs | false | — | — | On: Cgs is held at its bias-point value; the other capacitances follow the model. |
| LinearCdg | false | — | — | On: Cdg is held at its bias-point value; the other capacitances follow the model. |
| LinearCds | false | — | — | On: Cds is held at its bias-point value; the other capacitances follow the model. |
| LinearCm | false | — | — | On: the transcapacitance Cm is held at its bias-point value; the others follow the model. |
| GateLag | true | — | — | Off: gate-lag traps follow the voltage, with no lag. |
| DrainLag | true | — | — | Off: drain-lag traps follow the voltage, with no lag. |
| SelfHeating | true | — | — | Off: evaluated at the run's temperature, with no self-heating. |
| Dispersion | true | — | — | Off: the drain carries its DC current at every frequency. |
System-level blocks
The blocks a system block diagram is drawn out of: the level above a transistor, where a signal path is a chain of named boxes rather than a circuit. They share the mixer's drawing grammar — a block reads left to right, inputs on the left and outputs on the right, and a block whose leads are not interchangeable labels them, because connecting the wrong one gives a circuit that solves and is wrong. Every one of them is in the palette's System filter, along with the two mixer tiles.
What each block is for, what "ideal by construction" costs you, which analysis answers which question, and the whole of the passive-intermodulation story — the datasheet conversion, which blocks can carry it, and how to give one to a block that cannot — are in System Components. Read that before placing one; the entries below are the glyph, the pins and the parameter table.
Noise. The extrinsic network is thermal at the device's own temperature, which includes the self-heating rise at
the operating point; the thermal network (Rth, Cth) carries heat, not current, and has no noise. The core's noise is
the model's optional Noise block: a drain temperature Td (noise current 4k·Td·gds across the intrinsic
drain–source), a gate temperature Tg (the temperature of the network's element named Ri), and Kf/Af. Each
temperature is a constant, an equation or a table over the core's vgs, vds and temperature, in kelvin. A model
without the block is complete; its core is named as noiseless. The Model Composer fits the block
from measured noise parameters in its Noise step.
Balun
A transformer between a single unbalanced port and a balanced pair. UNB is on the left;
BAL+ and BAL− are on the right, and the +/− marks say which is which — swapping them inverts
the balanced signal, which is a circuit that still solves. Zbal is the impedance of each
balanced port to ground, so the differential impedance across the pair is twice it.
In depth: System Components › Balun.
| Net | Terminal |
|---|---|
| 1 | UNB |
| 2 | BAL+ |
| 3 | BAL- |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| Zunb | 50 | Ω | — | Reference impedance of the unbalanced port. |
| Zbal | 50 | Ω | — | Reference impedance of EACH balanced port to ground, so the differential impedance across BAL+ and BAL− is twice this. The 50/50 default is the ordinary 1:2 balun. |
| IL | 0 | dB | — | Insertion loss from the unbalanced port to the balanced pair, as a positive number of dB. |
| AmpImb | 0 | dB | — | How far apart in level the two balanced outputs sit, in dB. 0 is a perfect split; the imbalance is applied symmetrically, half up on one output and half down on the other. |
| PhaseImb | 0 | deg | — | Departure from 180°, in degrees. 0 gives exactly antiphase outputs. |
Circulator
A three-port non-reciprocal junction: power entering port 1 leaves at port 2, power entering port 2
leaves at port 3, and power entering port 3 leaves at port 1. The arrow inside the circle is drawn
from the Direction parameter — CW circulates 1 → 2 → 3 → 1 and CCW reverses it — so which way
a circulator turns is read off the schematic rather than out of a dialog. Terminate the unused port
and it is an isolator. It can carry a passive-intermod specification.
In depth: System Components › Circulator.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
| 3 | 3 |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| Direction | CW | — | — | Which way the circulator turns: CW circulates port 1 to 2 to 3 to 1, CCW reverses it. The arrow drawn inside the symbol follows this. |
| IL | 0 | dB | — | Insertion loss along the forward path, as a positive number of dB. |
| Isolation | 200 | dB | — | How far below the signal the leakage the WRONG way round the circle sits. The 200 dB default means none, and the entry is not stamped at all. |
| RL | 200 | dB | — | Return loss at every port that does not state its own VSWR. 200 dB means exactly matched. |
| Z0 | 50 | Ω | — | REFERENCE impedance of all three ports, real or complex - what S is defined against, unlike a Zin/Zout, which names what a port presents. It is NOT the way to detune the match: use VSWR1/Ang1, which set port 1's own reflection rather than the reference every port shares. |
| VSWR1 | 1 | — | — | Voltage standing-wave ratio at this port, with the other two matched - a real circulator is badly matched and this is how far. 1 means the port does not state one and falls back to RL. Pair it with the matching Ang: the SAME VSWR at a different angle is a completely different load to whatever is connected here. |
| Ang1 | 0 | deg | — | Angle of this port's reflection coefficient, in degrees. Read only when the matching VSWR states a mismatch. Frequency-flat: it is the mismatch you want to test against, not a rotating one. |
| VSWR2 | 1 | — | — | Voltage standing-wave ratio at this port, with the other two matched - a real circulator is badly matched and this is how far. 1 means the port does not state one and falls back to RL. Pair it with the matching Ang: the SAME VSWR at a different angle is a completely different load to whatever is connected here. |
| Ang2 | 0 | deg | — | Angle of this port's reflection coefficient, in degrees. Read only when the matching VSWR states a mismatch. Frequency-flat: it is the mismatch you want to test against, not a rotating one. |
| VSWR3 | 1 | — | — | Voltage standing-wave ratio at this port, with the other two matched - a real circulator is badly matched and this is how far. 1 means the port does not state one and falls back to RL. Pair it with the matching Ang: the SAME VSWR at a different angle is a completely different load to whatever is connected here. |
| Ang3 | 0 | deg | — | Angle of this port's reflection coefficient, in degrees. Read only when the matching VSWR states a mismatch. Frequency-flat: it is the mismatch you want to test against, not a rotating one. |
| PIM | -200 | dBm | — | Passive intermod: the third-order product this block puts on its output when two carriers of PIMPc each drive its input, as an absolute level. The -200 dBm default means there is no intermod here and none is calculated at all. A part quoted in dBc converts by adding PIMPc — -153 dBc at +43 dBm is -110 dBm. |
| PIMPc | 43 | dBm | — | Power per carrier the PIM figure above was measured at — the second half of one specification. Two carriers at this power produce a product at exactly PIM; the product then rides the third power of drive, so 10 dB less carrier is 30 dB less product. |
Switch
An SPST switch. Its two pins are interchangeable, so they carry no names. The blade is drawn in the
position State sets — lifted at 0, closed at 1 — which is what makes a swept State
readable on the page.
In depth: System Components › Switch.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| State | 1 | — | shown | 1 closes the switch, 0 opens it. The symbol is drawn in the position it is set to, so a swept State reads off the schematic. |
| Throws | 1 | — | — | How many throws the switch has: 1 for the SPST tile, 2 for the SPDT. It is what makes the two tiles one component, and it is fixed by the tile — place the other one to get the other throw count. |
| IL | 0 | dB | — | Insertion loss of the path the switch is making, as a positive number of dB. |
| Isolation | 200 | dB | — | How far below the signal the leakage past an OPEN throw sits. The 200 dB default means none — the ideal switch leaks nothing, and the entry is not stamped at all. |
| OffState | Reflective | — | — | What an open throw looks like from its own port: Reflective is an open circuit, Absorptive is a matched termination. Reflective is what a series switch does. |
| Z0 | 50 | Ω | — | Reference impedance of every port. Each port is this resistance to its own reference. |
| RL | 200 | dB | — | Return loss of the closed path. 200 dB means the closed switch is exactly matched. |
Transfer Switch (SwitchD)
An SPDT switch: one common port on the left and two throws on the right. State selects the throw —
1 or 2, or 0 for both open — and the blade in the symbol points at it. Both switch tiles use
the SW instance prefix, so swapping one for the other does not renumber a schematic.
In depth: System Components › Transfer Switch.
| Net | Terminal |
|---|---|
| 1 | COM |
| 2 | T1 |
| 3 | T2 |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| State | 1 | — | shown | Which throw the common port is connected to — 1 or 2, or 0 for both open. The blade in the symbol points at it. |
| Throws | 2 | — | — | How many throws the switch has: 1 for the SPST tile, 2 for the SPDT. It is what makes the two tiles one component, and it is fixed by the tile — place the other one to get the other throw count. |
| IL | 0 | dB | — | Insertion loss of the path the switch is making, as a positive number of dB. |
| Isolation | 200 | dB | — | How far below the signal the leakage past an OPEN throw sits. The 200 dB default means none — the ideal switch leaks nothing, and the entry is not stamped at all. |
| OffState | Reflective | — | — | What an open throw looks like from its own port: Reflective is an open circuit, Absorptive is a matched termination. Reflective is what a series switch does. |
| Z0 | 50 | Ω | — | Reference impedance of every port. Each port is this resistance to its own reference. |
| RL | 200 | dB | — | Return loss of the closed path. 200 dB means the closed switch is exactly matched. |
Amplifier (Amp)
An ideal amplifier: IN on the left, OUT on the right. Nothing is drawn inside the triangle
because the gain belongs where a reader looks for a number — the label beside the symbol. It has no
bias pins and consumes no DC power, and one third-order intercept sets its intermodulation and its
compression together.
In depth: System Components › Amplifier.
| Net | Terminal |
|---|---|
| 1 | IN |
| 2 | OUT |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| Gain | 20 | dB | shown | Small-signal gain from the input port to the output port. Shown beside the symbol, because a triangle with a number inside it stops being readable at three digits. |
| IP3 | 40 | dBm | shown | Third-order intercept, referred to whichever port IP3Ref names. It is the amplifier's ONE nonlinearity, so it sets IM3 and compression together: the 1 dB compression point follows at IIP3 - 8.96 dB and is not separately adjustable. The 200 dBm default means the amplifier is exactly linear and never compresses. |
| IP3Ref | Output | — | — | Whether IP3 above is an input-referred number or an output-referred one. OIP3 = IIP3 + Gain is an identity, so this is one field and a reference rather than two fields that could disagree. Output is the default, because that is the form a power amplifier's datasheet quotes. |
| Zin | 50 | Ω | — | The impedance the input port PRESENTS, and what RLin is measured against. A complex value is conjugate-matched by a Term at its conjugate, and is accepted only while the amplifier is LINEAR - set IP3 to 200, since the tile's own default of 40 dBm is not. |
| Zout | 50 | Ω | — | The impedance the output port PRESENTS, and what RLout is measured against. See Zin for the complex case. |
| RLin | 200 | dB | — | Input return loss. The 200 dB default means exactly matched - no reflection entry is stamped at all. The gain you typed is what you measure at any value of it. |
| RLout | 200 | dB | — | Output return loss. 200 dB means exactly matched. |
| S12 | 200 | dB | — | Reverse isolation. The 200 dB default means the amplifier is unilateral - the reverse path is absent, not small, which is what makes an ideal amplifier unconditionally stable. Setting it is what makes stability a question at all. |
| NF | — | dB | — | Noise figure, measured from a source equal to Zin at 290 K - the datasheet number, and what the S-parameter noise analysis returns for a matched amplifier. Blank means noiseless. On its own it is one noise wave entering the input: a source other than Zin raises the noise figure along the ordinary noise-parameter curve, with NFmin = NF at Zs = Zin. |
| NFopt | — | dB | — | Minimum noise figure, for an amplifier whose noise match is not its power match. Blank takes NF. With NF also stated and Gopt away from Zin, Rn follows from the two. |
| Rn | — | Ω | — | Equivalent noise resistance: how fast the noise figure rises away from the noise match. Blank derives it - from NF and NFopt when both are stated, otherwise the value one input noise wave has. |
| Gopt | — | — | — | The source reflection coefficient that gives NFopt, referenced to the real part of Zin; complex, e.g. 0.2+j0.25. Blank means Zin itself. |
Directional Coupler
Four ports in the order a coupler is always specified: 1 in, 2 through, 3 coupled, 4 isolated. The two arms run straight through the body, because that is what a coupler is — two lines that happen to be close to one another. The arrow does real work: it is the whole of what separates the coupled port from the isolated one, and a coupler drawn without it is ambiguous in exactly the way that produces a silently wrong circuit.
In depth: System Components › Directional Coupler.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
| 3 | 3 |
| 4 | 4 |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| Coupling | 20 | dB | shown | How far below the input the coupled port sits, in dB. This alone sets the split — the through port gets whatever is left, so a 20 dB coupler already loses 0.04 dB through its main arm. 3.0103 dB is the equal split that makes a hybrid. |
| Phase | 90 | deg | — | Phase of the coupled port relative to the through port, in degrees — 90 for a quadrature hybrid, 180 for an anti-phase one. This block holds it at EVERY frequency, which no real coupler does; build one from four quarter-wave TLIN arms if you need the bandwidth to be real. |
| Directivity | 200 | dB | — | How far below the COUPLED port the isolated port sits, in dB. The 200 dB default means the isolated port is exactly isolated — no entry is stamped at all. |
| IL | 0 | dB | — | Loss ADDED on top of the split, as a positive number of dB. It is not a substitute for the split: an ideal coupler's main-arm loss is already in the Coupling arithmetic. |
| RL | 200 | dB | — | Return loss at every port. 200 dB means all four ports are exactly matched. |
| Z0 | 50 | Ω | — | Reference impedance of all four ports. Each port is this resistance to its own reference. |
| PIM | -200 | dBm | — | Passive intermod: the third-order product this block puts on its output when two carriers of PIMPc each drive its input, as an absolute level. The -200 dBm default means there is no intermod here and none is calculated at all. A part quoted in dBc converts by adding PIMPc — -153 dBc at +43 dBm is -110 dBm. |
| PIMPc | 43 | dBm | — | Power per carrier the PIM figure above was measured at — the second half of one specification. Two carriers at this power produce a product at exactly PIM; the product then rides the third power of drive, so 10 dB less carrier is 30 dB less product. |
90° Hybrid (Hybrid90)
The same component as the coupler above, at 3.01 dB with the coupled port in quadrature. Same body, same pins, same arrow; the phase written inside the frame is the difference, because the phase is the difference.
In depth: System Components › 90° Hybrid.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
| 3 | 3 |
| 4 | 4 |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| Coupling | 3.0103 | dB | — | How far below the input the coupled port sits, in dB. This alone sets the split — the through port gets whatever is left, so a 20 dB coupler already loses 0.04 dB through its main arm. 3.0103 dB is the equal split that makes a hybrid. |
| Phase | 90 | deg | — | Phase of the coupled port relative to the through port, in degrees — 90 for a quadrature hybrid, 180 for an anti-phase one. This block holds it at EVERY frequency, which no real coupler does; build one from four quarter-wave TLIN arms if you need the bandwidth to be real. |
| Directivity | 200 | dB | — | How far below the COUPLED port the isolated port sits, in dB. The 200 dB default means the isolated port is exactly isolated — no entry is stamped at all. |
| IL | 0 | dB | — | Loss ADDED on top of the split, as a positive number of dB. It is not a substitute for the split: an ideal coupler's main-arm loss is already in the Coupling arithmetic. |
| RL | 200 | dB | — | Return loss at every port. 200 dB means all four ports are exactly matched. |
| Z0 | 50 | Ω | — | Reference impedance of all four ports. Each port is this resistance to its own reference. |
| PIM | -200 | dBm | — | Passive intermod: the third-order product this block puts on its output when two carriers of PIMPc each drive its input, as an absolute level. The -200 dBm default means there is no intermod here and none is calculated at all. A part quoted in dBc converts by adding PIMPc — -153 dBc at +43 dBm is -110 dBm. |
| PIMPc | 43 | dBm | — | Power per carrier the PIM figure above was measured at — the second half of one specification. Two carriers at this power produce a product at exactly PIM; the product then rides the third power of drive, so 10 dB less carrier is 30 dB less product. |
180° Hybrid (Hybrid180)
The rat race: again the same component, at 3.01 dB with the coupled port in anti-phase — a sum port
and a difference port. Both hybrids share the HYB instance prefix with each other, and all three
tiles share one engine component.
In depth: System Components › 180° Hybrid.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
| 3 | 3 |
| 4 | 4 |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| Coupling | 3.0103 | dB | — | How far below the input the coupled port sits, in dB. This alone sets the split — the through port gets whatever is left, so a 20 dB coupler already loses 0.04 dB through its main arm. 3.0103 dB is the equal split that makes a hybrid. |
| Phase | 180 | deg | — | Phase of the coupled port relative to the through port, in degrees — 90 for a quadrature hybrid, 180 for an anti-phase one. This block holds it at EVERY frequency, which no real coupler does; build one from four quarter-wave TLIN arms if you need the bandwidth to be real. |
| Directivity | 200 | dB | — | How far below the COUPLED port the isolated port sits, in dB. The 200 dB default means the isolated port is exactly isolated — no entry is stamped at all. |
| IL | 0 | dB | — | Loss ADDED on top of the split, as a positive number of dB. It is not a substitute for the split: an ideal coupler's main-arm loss is already in the Coupling arithmetic. |
| RL | 200 | dB | — | Return loss at every port. 200 dB means all four ports are exactly matched. |
| Z0 | 50 | Ω | — | Reference impedance of all four ports. Each port is this resistance to its own reference. |
| PIM | -200 | dBm | — | Passive intermod: the third-order product this block puts on its output when two carriers of PIMPc each drive its input, as an absolute level. The -200 dBm default means there is no intermod here and none is calculated at all. A part quoted in dBc converts by adding PIMPc — -153 dBc at +43 dBm is -110 dBm. |
| PIMPc | 43 | dBm | — | Power per carrier the PIM figure above was measured at — the second half of one specification. Two carriers at this power produce a product at exactly PIM; the product then rides the third power of drive, so 10 dB less carrier is 30 dB less product. |
Filter
A two-port filter synthesised from a prototype — Butterworth, Chebyshev, inverse Chebyshev, Bessel
or elliptic, as lowpass, bandpass or highpass. Its symbol is the Match symbol — the
same picture, not a related one. Impedance matching is a form of filtering, the two are built out of
the same idea, and the library says so. The three stacked waves read as a frequency axis with the
highest at the top, and a slash is struck through every wave the network blocks, following the
Form parameter:
Form |
Struck | Passes |
|---|---|---|
Lowpass |
the top two | the lowest |
Bandpass |
the top and the bottom | the middle |
Highpass |
the bottom two | the highest |
Tell a filter from a matching network by its type label and its instance name — FLT1 against MN1
— the same way the five FET laws, which also share one glyph, are told apart. Order is the
prototype order, so a 3rd-order bandpass is a 6th-degree network.
In depth: System Components › Filter.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. The two terminals are interchangeable — this block is symmetric, and its parameters describe both ports at once.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| Response | Chebyshev | — | — | Which prototype family the response comes from: Butterworth (maximally flat magnitude), Chebyshev (equiripple passband, reads Ripple), InvChebyshev (flat passband and an equiripple stopband floor, reads Astop), Bessel (maximally flat GROUP DELAY — chosen for its phase, not its shape) or Elliptic (equiripple in both bands, reads Ripple and Astop). A parameter the family does not read is ignored, so you never have to clear a field to change family. |
| Form | Bandpass | — | — | Lowpass, Bandpass or Highpass. The symbol strikes a line through every wave the network blocks, so the shape is read off the glyph. Lowpass and Highpass read Fc; Bandpass reads F1 and F2 and ignores it. |
| Order | 3 | — | — | The PROTOTYPE order. A Bandpass transformation doubles the degree, so Order = 3 as a bandpass is a 6th-degree network — both conventions exist in the wild, and this one is the prototype's. The stopband slope of an all-pole family is 20 x Order dB per decade; InvChebyshev and Elliptic level off at their own floor instead. |
| Fc | 1 | GHz | — | The cutoff, for Lowpass and Highpass. For Chebyshev and Elliptic it is the RIPPLE bandwidth edge (where the response leaves the ripple band), for Butterworth the 3.01 dB point, for InvChebyshev the STOPBAND edge — where Astop is first met — and for Bessel the reciprocal of the group delay. Ignored when Form is Bandpass. |
| F1 | 0.9 | GHz | — | Lower band edge, for Bandpass. The band centre is the GEOMETRIC mean of F1 and F2 and the response is geometrically symmetric about it, not arithmetically. Ignored for Lowpass and Highpass. |
| F2 | 1.1 | GHz | — | Upper band edge, for Bandpass. Read with F1 — the two set both the centre and the width. Ignored for Lowpass and Highpass. |
| Ripple | 0.1 | dB | — | Passband ripple, in dB, for Chebyshev and Elliptic. The passband swings between 0 and -Ripple exactly this many times, which is what the order buys. Ignored by the other three families. |
| Astop | 40 | dB | — | Stopband floor, in dB below the passband, for InvChebyshev and Elliptic. The stopband is equiripple AT this level rather than falling away past it — that is the trade those two families make for a sharper transition. Ignored by the other three families. |
| Zin | 50 | Ω | — | The impedance port 1 PRESENTS - so a complex value is conjugate-matched by a Term at its conjugate: Zin = 5+j100 wants Z = 5-j100 across it for maximum power transfer. This block is stamped as its scattering matrix rather than synthesised as a ladder, so Zin and Zout may differ freely: the filter is then also an ideal lossless impedance transformer, matched at BOTH ports in its passband. Measured in a uniform 50 ohm system an unequal pair shows the transformer's mismatch, which is the answer and not a fault. |
| Zout | 50 | Ω | — | The impedance port 2 PRESENTS. See Zin — the two are independent, and an unequal pair is a lossless transformer as well as a filter. |
| IL | 0 | dB | — | A flat insertion loss laid on top of the ideal response, in dB. It multiplies S21 and leaves S11 alone, so the block genuinely dissipates rather than reflecting what it loses — which is what a real filter's loss does. 0 is the lossless ideal. |
Attenuator
A fixed pad. Its two pins are interchangeable, so they carry no names, and the pinched bowtie reads as "signal made smaller". The loss shows as the label beside the symbol. With a small loss and a passive-intermod specification it is a PIM generator you can place in front of anything.
In depth: System Components › Attenuator.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. The two terminals are interchangeable — this block is symmetric, and its parameters describe both ports at once.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| Loss | 10 | dB | shown | How far the attenuator knocks the signal down, as a positive number of dB. 0 dB is an ideal through, which is a legitimate thing to place. |
| Z0 | 50 | Ω | — | Reference impedance of both ports. Each port is this resistance to its own reference. |
| RL | 200 | dB | — | Return loss of both ports. The 200 dB default means exactly matched — no reflection entry is stamped at all. |
| PIM | -200 | dBm | — | Passive intermod: the third-order product this block puts on its output when two carriers of PIMPc each drive its input, as an absolute level. The -200 dBm default means there is no intermod here and none is calculated at all. A part quoted in dBc converts by adding PIMPc — -153 dBc at +43 dBm is -110 dBm. |
| PIMPc | 43 | dBm | — | Power per carrier the PIM figure above was measured at — the second half of one specification. Two carriers at this power produce a product at exactly PIM; the product then rides the third power of drive, so 10 dB less carrier is 30 dB less product. |
Delay
A pure time delay in a matched signal path: S21 = S12 = e^(−jωT), no reflection and no loss. Its
two pins are interchangeable. The delay T shows as the label beside the symbol.
In depth: System Components › Delay.
| Net | Terminal |
|---|---|
| 1 | 1 |
| 2 | 2 |
The nets of an instance line, in this order. The two terminals are interchangeable — this block is symmetric, and its parameters describe both ports at once.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| T | 1 | ns | shown | The delay, as a time: the through path is e^(-jwT), a phase that grows in proportion to frequency. Matched and lossless at every frequency, and an ideal through at DC. A negative delay is allowed and cancels a delay elsewhere. |
| Z0 | 50 | Ω | — | Reference impedance of both ports. Each port is this resistance to its own reference. |
Duplexer
An antenna port that splits into a transmit branch and a receive branch, each through its own
passband — which is what the glyph draws: one junction fanning into two filters, each wave stack
labelled with the arm it belongs to. ANT is on the left, TX and RX on the right. It takes a
complete filter specification per arm, and its isolation is a consequence of the two responses
meeting at one node rather than a parameter.
In depth: System Components › Duplexer.
| Net | Terminal |
|---|---|
| 1 | ANT |
| 2 | TX |
| 3 | RX |
The nets of an instance line, in this order.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| Zant | 50 | Ω | — | The impedance the shared antenna port PRESENTS - the arms' own Zin, under a shorter name, so a complex value is conjugate-matched by a Term at its conjugate. The TX and RX arms both look into it, which is what makes them interact at all. |
| TxResponse | Chebyshev | — | — | TX arm. Which prototype family the response comes from: Butterworth (maximally flat magnitude), Chebyshev (equiripple passband, reads Ripple), InvChebyshev (flat passband and an equiripple stopband floor, reads Astop), Bessel (maximally flat GROUP DELAY — chosen for its phase, not its shape) or Elliptic (equiripple in both bands, reads Ripple and Astop). A parameter the family does not read is ignored, so you never have to clear a field to change family. There is no isolation parameter: the TX-to-RX isolation is what these two responses and the antenna junction produce between them. |
| TxForm | Bandpass | — | — | TX arm. Lowpass, Bandpass or Highpass. The symbol strikes a line through every wave the network blocks, so the shape is read off the glyph. Lowpass and Highpass read Fc; Bandpass reads F1 and F2 and ignores it. There is no isolation parameter: the TX-to-RX isolation is what these two responses and the antenna junction produce between them. |
| TxOrder | 3 | — | — | TX arm. The PROTOTYPE order. A Bandpass transformation doubles the degree, so Order = 3 as a bandpass is a 6th-degree network — both conventions exist in the wild, and this one is the prototype's. The stopband slope of an all-pole family is 20 x Order dB per decade; InvChebyshev and Elliptic level off at their own floor instead. There is no isolation parameter: the TX-to-RX isolation is what these two responses and the antenna junction produce between them. |
| TxFc | 1 | GHz | — | TX arm. The cutoff, for Lowpass and Highpass. For Chebyshev and Elliptic it is the RIPPLE bandwidth edge (where the response leaves the ripple band), for Butterworth the 3.01 dB point, for InvChebyshev the STOPBAND edge — where Astop is first met — and for Bessel the reciprocal of the group delay. Ignored when Form is Bandpass. There is no isolation parameter: the TX-to-RX isolation is what these two responses and the antenna junction produce between them. |
| TxF1 | 0.9 | GHz | — | TX arm. Lower band edge, for Bandpass. The band centre is the GEOMETRIC mean of F1 and F2 and the response is geometrically symmetric about it, not arithmetically. Ignored for Lowpass and Highpass. There is no isolation parameter: the TX-to-RX isolation is what these two responses and the antenna junction produce between them. |
| TxF2 | 1 | GHz | — | TX arm. Upper band edge, for Bandpass. Read with F1 — the two set both the centre and the width. Ignored for Lowpass and Highpass. There is no isolation parameter: the TX-to-RX isolation is what these two responses and the antenna junction produce between them. |
| TxRipple | 0.1 | dB | — | TX arm. Passband ripple, in dB, for Chebyshev and Elliptic. The passband swings between 0 and -Ripple exactly this many times, which is what the order buys. Ignored by the other three families. There is no isolation parameter: the TX-to-RX isolation is what these two responses and the antenna junction produce between them. |
| TxAstop | 40 | dB | — | TX arm. Stopband floor, in dB below the passband, for InvChebyshev and Elliptic. The stopband is equiripple AT this level rather than falling away past it — that is the trade those two families make for a sharper transition. Ignored by the other three families. There is no isolation parameter: the TX-to-RX isolation is what these two responses and the antenna junction produce between them. |
| TxZ | 50 | Ω | — | TX arm. The impedance port 2 PRESENTS. See Zin — the two are independent, and an unequal pair is a lossless transformer as well as a filter. There is no isolation parameter: the TX-to-RX isolation is what these two responses and the antenna junction produce between them. |
| TxIL | 0 | dB | — | TX arm. A flat insertion loss laid on top of the ideal response, in dB. It multiplies S21 and leaves S11 alone, so the block genuinely dissipates rather than reflecting what it loses — which is what a real filter's loss does. 0 is the lossless ideal. There is no isolation parameter: the TX-to-RX isolation is what these two responses and the antenna junction produce between them. |
| RxResponse | Chebyshev | — | — | RX arm. Which prototype family the response comes from: Butterworth (maximally flat magnitude), Chebyshev (equiripple passband, reads Ripple), InvChebyshev (flat passband and an equiripple stopband floor, reads Astop), Bessel (maximally flat GROUP DELAY — chosen for its phase, not its shape) or Elliptic (equiripple in both bands, reads Ripple and Astop). A parameter the family does not read is ignored, so you never have to clear a field to change family. There is no isolation parameter: the TX-to-RX isolation is what these two responses and the antenna junction produce between them. |
| RxForm | Bandpass | — | — | RX arm. Lowpass, Bandpass or Highpass. The symbol strikes a line through every wave the network blocks, so the shape is read off the glyph. Lowpass and Highpass read Fc; Bandpass reads F1 and F2 and ignores it. There is no isolation parameter: the TX-to-RX isolation is what these two responses and the antenna junction produce between them. |
| RxOrder | 3 | — | — | RX arm. The PROTOTYPE order. A Bandpass transformation doubles the degree, so Order = 3 as a bandpass is a 6th-degree network — both conventions exist in the wild, and this one is the prototype's. The stopband slope of an all-pole family is 20 x Order dB per decade; InvChebyshev and Elliptic level off at their own floor instead. There is no isolation parameter: the TX-to-RX isolation is what these two responses and the antenna junction produce between them. |
| RxFc | 1 | GHz | — | RX arm. The cutoff, for Lowpass and Highpass. For Chebyshev and Elliptic it is the RIPPLE bandwidth edge (where the response leaves the ripple band), for Butterworth the 3.01 dB point, for InvChebyshev the STOPBAND edge — where Astop is first met — and for Bessel the reciprocal of the group delay. Ignored when Form is Bandpass. There is no isolation parameter: the TX-to-RX isolation is what these two responses and the antenna junction produce between them. |
| RxF1 | 1.1 | GHz | — | RX arm. Lower band edge, for Bandpass. The band centre is the GEOMETRIC mean of F1 and F2 and the response is geometrically symmetric about it, not arithmetically. Ignored for Lowpass and Highpass. There is no isolation parameter: the TX-to-RX isolation is what these two responses and the antenna junction produce between them. |
| RxF2 | 1.2 | GHz | — | RX arm. Upper band edge, for Bandpass. Read with F1 — the two set both the centre and the width. Ignored for Lowpass and Highpass. There is no isolation parameter: the TX-to-RX isolation is what these two responses and the antenna junction produce between them. |
| RxRipple | 0.1 | dB | — | RX arm. Passband ripple, in dB, for Chebyshev and Elliptic. The passband swings between 0 and -Ripple exactly this many times, which is what the order buys. Ignored by the other three families. There is no isolation parameter: the TX-to-RX isolation is what these two responses and the antenna junction produce between them. |
| RxAstop | 40 | dB | — | RX arm. Stopband floor, in dB below the passband, for InvChebyshev and Elliptic. The stopband is equiripple AT this level rather than falling away past it — that is the trade those two families make for a sharper transition. Ignored by the other three families. There is no isolation parameter: the TX-to-RX isolation is what these two responses and the antenna junction produce between them. |
| RxZ | 50 | Ω | — | RX arm. The impedance port 2 PRESENTS. See Zin — the two are independent, and an unequal pair is a lossless transformer as well as a filter. There is no isolation parameter: the TX-to-RX isolation is what these two responses and the antenna junction produce between them. |
| RxIL | 0 | dB | — | RX arm. A flat insertion loss laid on top of the ideal response, in dB. It multiplies S21 and leaves S11 alone, so the block genuinely dissipates rather than reflecting what it loses — which is what a real filter's loss does. 0 is the lossless ideal. There is no isolation parameter: the TX-to-RX isolation is what these two responses and the antenna junction produce between them. |
Combiner
An N-way combiner, which read the other way is an N-way splitter: the common port S on the right and
the paths 1 to N down the left, as many pins as N asks for. Ideal: matched, reciprocal, the paths
isolated from each other, and frequency-flat. Every path takes IL; a path that needs its own loss or
phase gets an IL[k] or a Phase[k] row.
In depth: System Components › Combiner.
| Net | Terminal |
|---|---|
| 1 | S |
| 2 | 1 |
| 3 | 2 |
The nets of an instance line, in this order. How many there are is set by N; the table shows N = 2. The common port S comes first, then the paths 1 to N in order. The paths differ only by their own IL[k] and Phase[k]; S is the port they combine into, or split from.
| Name | Default | Unit | On schematic | Meaning |
|---|---|---|---|---|
| N | 2 | — | shown | Number of paths into the common port S. The symbol draws one pin per path, plus S. |
| IL | 0 | dB | shown | Every path's loss beyond the ideal split of 10*log10(N), in dB. A path with its own IL[k] row takes that instead. |
| Z0 | 50 | Ω | — | Reference impedance of every port. |
Annotation components
Variables (VAR)
A port-less annotation holding name = expression variable definitions, scoped to where it is placed
— global at the test bench top, or local inside a cell. Variables are sweepable. Edit the rows in the
multi-line text editor by double-clicking the VAR. No fixed parameters.
Measurements (MEAS)
A port-less annotation holding name = expression measurement equations, evaluated after a run — for
example Pout_dBm = 10*log10(...). Measurements attach at the top test-bench level only. Edit the rows
in the same multi-line editor as VAR. No fixed parameters.
How to write one: Measurements covers reading an analysis's results (nodes, probes, harmonics, sweeps and frequency), and Expressions covers the language itself: operators, functions and units. The editor's Help button opens the first of these.
The full component list
| Component | Type | Category |
|---|---|---|
| R | Resistor | Lumped |
| L | Inductor | Lumped |
| C | Capacitor | Lumped |
| SRLC | Srlc | Lumped |
| PRLC | Prlc | Lumped |
| SRL | Srl | Lumped |
| SRC | Src | Lumped |
| SLC | Slc | Lumped |
| PRL | Prl | Lumped |
| PRC | Prc | Lumped |
| PLC | Plc | Lumped |
| NonlinearC | NonlinearC | Lumped |
| Vdc | Vdc | Sources |
| VTone | ToneSource | Sources |
| ITone | CurrentToneSource | Sources |
| VCCS | Vccs | Sources |
| VCVS | Vcvs | Sources |
| OpAmp | OpAmp | Devices |
| OpAmp5 | OpAmp5 | Devices |
| Transformer | Transformer | Lumped |
| P1Tone | P1Tone | Sources |
| PnTone | PnTone | Sources |
| MOD_Source | ModSource | Sources |
| GND | Ground | Terminals |
| Term | Term | Terminals |
| TermG | TermG | Terminals |
| Pin | Pin | Terminals |
| IProbe | IProbe | Terminals |
| VProbe | VProbe | Terminals |
| WSProbe | WSProbe | Terminals |
| OscProbe | OscProbe | Terminals |
| TLIN | Tline | TransmissionLine |
| CLIN | CLine | TransmissionLine |
| MCLIN | MCLine | Microstrip |
| BCLIN | BCLine | TransmissionLine |
| MBCLIN | MBCLine | Microstrip |
| M | Mutual | Lumped |
| S2P | Snp | DataFiles |
| EM Field Data | EmFieldData | DataFiles |
| Deembed | Deembed | DataFiles |
| SPICE | SpiceModel | DataFiles |
| Z2P | ZPort | Other |
| SDD2 | Sdd | Other |
| Tuner | Tuner | Terminals |
| SourceTuner | SourceTuner | Sources |
| LoadTuner | LoadTuner | Terminals |
| VAR | Var | Other |
| MEAS | Meas | Other |
| Diode | Diode | Devices |
| Match | Match | Matching |
| MLIN | Mlin | Microstrip |
| CPWG | Cpwg | TransmissionLine |
| SLIN | Slin | TransmissionLine |
| MBEND | MBend | Microstrip |
| MCURVE | MCurve | Microstrip |
| MMITER | MMiter | Microstrip |
| MGAP | MGap | Microstrip |
| MTEE | MTee | Microstrip |
| MCROSS | MCross | Microstrip |
| MTAPER | Mtaper | Microstrip |
| MKLOPF | Mklopf | Microstrip |
| VIA | Via | Microstrip |
| VIAGND | ViaGnd | Microstrip |
| TESTPAD | TestPad | Microstrip |
| GSGPAD | GsgPad | Microstrip |
| MIMCAP | MimCap | Mmic |
| SPIRAL | Spiral | Mmic |
| OSPIRAL | OctSpiral | Mmic |
| TFR | Tfr | Mmic |
| AIRBRIDGE | Airbridge | Mmic |
| VerilogA | VerilogA | Devices |
| ComposedFET | ComposedFET | Devices |
| wBond | WBond | Other |
| Curtice | FetCurtice | Devices |
| CurticeCubic | FetCurticeCubic | Devices |
| Statz | FetStatz | Devices |
| Materka | FetMaterka | Devices |
| Angelov | FetAngelov | Devices |
| Curtice-P | PFetCurtice | Devices |
| Statz-P | PFetStatz | Devices |
| Materka-P | PFetMaterka | Devices |
| NJFET | JfetN | Devices |
| PJFET | JfetP | Devices |
| NIGBT | IgbtN | Devices |
| PIGBT | IgbtP | Devices |
| Bead | Bead | Lumped |
| NVDMOS | VdmosN | Devices |
| PVDMOS | VdmosP | Devices |
| NMOS1 | Mos1N | Devices |
| PMOS1 | Mos1P | Devices |
| NMOS3 | Mos3N | Devices |
| PMOS3 | Mos3P | Devices |
| NPN | BjtNpn | Devices |
| PNP | BjtPnp | Devices |
| Mixer | Mixer | Devices |
| MixerD | MixerD | Devices |
| Balun | Balun | System |
| Circulator | Circulator | System |
| Switch | Switch | System |
| SwitchD | SwitchD | System |
| Amp | Amp | System |
| Directional Coupler | Coupler | System |
| Hybrid90 | Hybrid90 | System |
| Hybrid180 | Hybrid180 | System |
| Filter | Filter | System |
| Attenuator | Atten | System |
| Duplexer | Duplexer | System |
| Delay | Delay | System |
| Combiner | Combiner | System |
See also: Dynamic symbols (SDD / ZPort / SnP) · Nonlinear Capacitor & C–V Editor · Pins, Ports & Terms · Netlist format.